NDP7061L Datasheet PDF - Fairchild
| Part Number | NDP7061L | |
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
| Manufacturers | Fairchild | |
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There is a preview and NDP7061L download ( pdf file ) link at the bottom of this page. Total 12 Pages | ||
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June 1996
NDP7061L / NDB7061L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
These logic level N-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process has been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulses in the avalanche and
commutation modes. These devices are particularly suited for
low voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery powered
circuits where fast switching, low in-line power loss, and
resistance to transients are needed.
60 A, 60 V. RDS(ON) = 0.018 Ω @ VGS= 5 V
RDS(ON) = 0.013 Ω @ VGS= 10 V.
Low drive requirements allowing operation directly from logic
drivers. VGS(TH) < 2.0V.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both through hole
and surface mount applications.
________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol Parameter
TC = 25°C unless otherwise noted
NDP7061L
VDSS Drain-Source Voltage
VDGR
Drain-Gate Voltage (RGS < 1 MΩ)
VGSS Gate-Source Voltage - Continuous
- Nonrepetitive (tP < 50 µs)
ID Drain Current - Continuous
- Pulsed
PD Maximum Power Dissipation @ TC = 25°C
Derate above 25°C
TJ,TSTG Operating and Storage Temperature Range
60
60
± 16
± 25
60
180
130
0.87
-65 to 175
NDB7061L
Units
V
V
V
A
W
W/°C
°C
© 1997 Fairchild Semiconductor Corporation
NDP7061L Rev.C1
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Typical Electrical Characteristics (continued)
1.15
I D = 250µA
1.1
1.05
1
0.95
0.9
-50 -25
0 25 50 75 100 125 150 175
T J , JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage
Variation with Temperature.
60
20 VGS = 0V
5
1
0.1
0.01
TJ= 125°C
25°C
-55°C
0.001
0.0001
0
0.2 0.4 0.6 0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 8. Body Diode Forward Voltage Variation with
Current and Temperature.
5000
3000
2000
Ciss
1000
Coss
500
300
200
100
1
f = 1 MHz
VGS = 0V
Crss
2 5 10 20 30
VDS, DRAIN TO SOURCE VOLTAGE (V)
50 60
Figure 9. Capacitance Characteristics.
VIN
VGEN
RGEN
G
RGS
VDD
RL
D
VOUT
DUT
S
Figure 11. Switching Test Circuit.
10
ID =60A
8
6
4
2
0
0 20
VDS= 12V
24V
48V
40 60
Qg , GATE CHARGE (nC)
80
100
Figure 10. Gate Charge Characteristics.
t d(on)
ton
tr
90%
td(off)
toff
tf
90%
VO U T
VIN
10%
10%
50%
10%
90%
INVERTED
50%
PULSE W IDTH
Figure 12. Switching Waveforms.
NDP7061L Rev.C1
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for NDP7061L electronic component. |
| Information | Total 12 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ NDP7061L.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| NDP7061 | The function is N-Channel Enhancement Mode Field Effect Transistor. Fairchild | |
| NDP7061L | The function is N-Channel Logic Level Enhancement Mode Field Effect Transistor. Fairchild | |
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