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NDP708A PDF даташит

Спецификация NDP708A изготовлена ​​​​«Fairchild» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв NDP708A
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители Fairchild
логотип Fairchild логотип 

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NDP708A Даташит, Описание, Даташиты
May 1994
NDP708A / NDP708AE / NDP708B / NDP708BE
NDB708A / NDB708AE / NDB708B / NDB708BE
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These N-channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially
tailored to minimize on-state resistance, provide
superior switching performance, and withstand high
energy pulses in the avalanche and commutation
modes. These devices are particularly suited for low
voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery
powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
60 and 54A, 80V. RDS(ON) = 0.022 and 0.025.
Critical DC electrical parameters specified at
elevated temperature.
Rugged internal source-drain diode can eliminate
the need for an external Zener diode transient
suppressor.
175°C maximum junction temperature rating.
High density cell design (3 million/in²) for extremely
low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both
through hole and surface mount applications.
_____________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol Parameter
TC = 25°C unless otherwise noted
NDP708A NDP708AE
NDB708A NDB708AE
NDP708B NDP708BE
NDB708B NDB708BE
VDSS Drain-Source Voltage
VDGR
Drain-Gate Voltage (RGS < 1 M)
VGSS Gate-Source Voltage - Continuous
- Nonrepetitive (tP < 50 µs)
ID Drain Current - Continuous
- Pulsed
80
80
±20
±40
60 54
180 162
PD Total Power Dissipation @ TC = 25°C
Derate above 25°C
150
1
TJ,TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds
-65 to 175
275
Units
V
V
V
V
A
A
W
W/°C
°C
°C
© 1997 Fairchild Semiconductor Corporation
NDP708.SAM









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NDP708A Даташит, Описание, Даташиты
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter
Conditions
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
EAS Single Pulse Drain-Source VDD = 25 V, ID = 60 A
Avalanche Energy
IAR Maximum Drain-Source Avalanche Current
Type Min Typ Max Units
NDP708AE
NDP708BE
NDB708AE
NDB708BE
600 mJ
60 A
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown
Voltage
VGS = 0 V, ID = 250 µA
ALL 80
V
IDSS Zero Gate Voltage Drain
Current
IGSSF Gate - Body Leakage, Forward
IGSSR Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
VDS = 80 V,
VGS = 0 V
TJ = 125°C
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
ALL
ALL
ALL
250 µA
1 mA
100 nA
-100 nA
VGS(th)
Gate Threshold Voltage
RDS(ON)
Static Drain-Source
On-Resistance
ID(on) On-State Drain Current
VDS = VGS,
ID = 250 µA
TJ = 125°C
ALL
2 2.6
1.4 1.9
4
3.6
VGS = 10 V,
ID = 30 A
TJ = 125°C
NDP708A
NDP708AE
NDB708A
NDB708AE
0.016 0.022
0.025 0.04
VGS = 10 V,
ID = 27 A
TJ = 125°C
NDP708B
NDP708BE
NDB708B
NDB708BE
0.25
0.044
VGS = 10 V, VDS = 10 V
NDP708A
NDP708AE
NDB708A
NDB708AE
60
V
V
A
NDP708B
NDP708BE
NDB708B
NDB708BE
54
A
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS
VDS = 10 V, ID = 30 A
ALL 16 33
S
Ciss Input Capacitance
Coss Output Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Crss Reverse Transfer Capacitance
ALL 2800 3600 pF
ALL 780 1000 pF
ALL 285 400 pF
NDP708.SAM









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NDP708A Даташит, Описание, Даташиты
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter
Conditions
Type Min Typ Max Units
SWITCHING CHARACTERISTICS (Note 2)
tD(ON)
Turn - On Delay Time
tr Turn - On Rise Time
VDD = 40 V, ID = 60 A,
VGS = 10 V, RGEN = 5
tD(OFF)
Turn - Off Delay Time
tf Turn - Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
VDS = 64 V,
ID = 60 A, VGS = 10 V
Qgd Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
ALL 15 25 nS
ALL 143 230 nS
ALL 58 90 nS
ALL 108 180 nS
ALL 94 130 nC
ALL 16 nC
ALL 51 nC
IS Maximum Continuos Drain-Source Diode Forward Current
NDP708A
NDP708AE
NDB708A
NDB708AE
60 A
NDP708B
NDP708BE
NDB708B
NDB708BE
54 A
ISM Maximum Pulsed Drain-Source Diode Forward Current
NDP708A
NDP708AE
NDB708A
NDB708AE
180 A
NDP708B
NDP708BE
NDB708B
NDB708BE
162 A
VSD Drain-Source Diode Forward
(Note 2) Voltage
trr Reverse Recovery Time
Irr Reverse Recovery Current
THERMAL CHARACTERISTICS
VGS = 0 V,
IS = 30 A
VGS = 0 V, IS = 60 A,
dIS/dt = 100 A/µs
TJ = 125°C
ALL
ALL
ALL
0.91 1.3
0.82 1.2
98 140
6.5 10
V
V
ns
A
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
Notes:
1. NDP708A/708B and NDB708A/708B are not rated for operation in avalanche mode.
2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
ALL
ALL
1 °C/W
62.5 °C/W
NDP708.SAM










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