DataSheet26.com

NDS8410A PDF даташит

Спецификация NDS8410A изготовлена ​​​​«Fairchild» и имеет функцию, называемую «Single 30V N-Channel PowerTrench MOSFET».

Детали детали

Номер произв NDS8410A
Описание Single 30V N-Channel PowerTrench MOSFET
Производители Fairchild
логотип Fairchild логотип 

6 Pages
scroll

No Preview Available !

NDS8410A Даташит, Описание, Даташиты
October 2004
NDS8410A
Single 30V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET are produced using
Fairchild’s proprietary, high cell density, DMOS
technology. This very high density process is
especially tailored to minimize on-state resistance and
provide superior switching performance. These devices
are particularly suited for low voltage applications such
as notebook computer power management and other
battery powered circuits where fast switching, low in-
line power loss, and resistance to transients are
needed.
Features
10.8 A, 30 V RDS(ON) = 12 m@ VGS = 10 V
RDS(ON) = 17 m@ VGS = 4.5 V
Ultra-low gate charge
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability
DD
DD
DD
DD
SO-8
Pin 1 SO-8 SS SS SS GG
54
63
72
81
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
NDS8410A
NDS8410A
13’’
Ratings
30
±20
10.8
50
2.5
1.2
1.0
–55 to +150
50
25
Tape width
12mm
Units
V
A
W
°C
°C/W
Quantity
2500 units
©2004 Fairchild Semiconductor Corporation
NDS8410A Rev D1(W)









No Preview Available !

NDS8410A Даташит, Описание, Даташиты
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSS Gate–Body Leakage
On Characteristics (Note 2)
VGS(th)
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on) On–State Drain Current
gFS Forward Transconductance
VGS = 0 V,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ=55°C
VGS = ±20 V, VDS = 0 V
VDS = VGS,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 10.8 A
VGS = 4.5 V, ID = 9 A
VGS = 10 V, ID = 10.8 A, TJ=125°C
VGS = 10 V, VDS = 5 V
VDS = 10 V, ID = 10.8 A
30
1
50
V
25 mV/°C
1
10
±100
µA
µA
nA
2
–4.9
7.7
9.6
10.7
55
3V
mV/°C
12 m
17
22
A
S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
RG Gate Resistance
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
VGS = 15 mV, f = 1.0 MHz
1620
380
160
1.3
pF
pF
pF
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6
VDS = 15 V,
VGS = 5 V
ID = 10.8 A,
10 19
6 22
27 45
12 27
16 22
4.8
5.6
ns
ns
ns
ns
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 2.1 A (Note 2)
trr
Diode Reverse Recovery Time
IF = 10.8 A, diF/dt = 100 A/µs
Qrr Diode Reverse Recovery Charge
0.82
28
18
2.1
1.2
A
V
nS
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°C/W when
mounted on a 1in2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
NDS8410A Rev D1(W)









No Preview Available !

NDS8410A Даташит, Описание, Даташиты
Typical Characteristics
50
VGS = 10V
40 6.0V
30
4.0V
4.5V
3.5V
20
10
0
0
3.0V
0.5 1 1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
2
Figure 1. On-Region Characteristics.
1.6
ID = 10.8A
VGS = 10V
1.4
1.2
1
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
BFigure 3. On-Resistance Variation with
Temperature.
50
VDS = 5V
40
30
TA = 125oC
-55oC
20
10
0
1.5
25oC
2 2.5 3 3.5
VGS, GATE TO SOURCE VOLTAGE (V)
4
Figure 5. Transfer Characteristics.
2.2
2
VGS = 3.5V
1.8
1.6
1.4 4.0V
4.5V
1.2 5.0V
6.0V
1 10V
0.8
0
10 20 30 40
ID, DRAIN CURRENT (A)
50
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.03
0.025
ID = 5.4A
0.02
0.015
TA = 125oC
0.01
0.005
2
TA = 25oC
468
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
0.01
TA = 125oC
25oC
-55oC
0.001
0.0001
0
0.2 0.4 0.6 0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
NDS8410A Rev D1(W)










Скачать PDF:

[ NDS8410A.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NDS8410Single N-Channel Enhancement Mode Field Effect TransistorFairchild
Fairchild
NDS8410ASingle 30V N-Channel PowerTrench MOSFETFairchild
Fairchild
NDS8410SSingle N-Channel Enhancement Mode Field Effect TransistorFairchild
Fairchild

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск