NDS9400A PDF даташит
Спецификация NDS9400A изготовлена «Fairchild» и имеет функцию, называемую «Single P-Channel Enhancement Mode Field Effect Transistor». |
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Детали детали
Номер произв | NDS9400A |
Описание | Single P-Channel Enhancement Mode Field Effect Transistor |
Производители | Fairchild |
логотип |
10 Pages
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NDS9400A
Single P-Channel Enhancement Mode Field Effect Transistor
February 1996
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulses in the avalanche and commutation modes. These
devices are particularly suited for low voltage applications such
as notebook computer power management and other battery
powered circuits where fast switching, low in-line power loss,
and resistance to transients are needed.
Features
-3.4A, -30V. RDS(ON) = 0.13Ω @ VGS = -10V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
Rugged and reliable.
________________________________________________________________________________
54
63
72
81
Absolute Maximum Ratings
Symbol Parameter
TA= 25°C unless otherwise noted
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
(Note 1a)
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient (Note 1a)
Thermal Resistance, Junction-to-Case (Note 1)
NDS9400A
-30
± 20
± 3.4
± 10
2.5
1.2
1
-55 to 150
50
25
Units
V
V
A
W
°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
NDS9400A.SAM
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Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter
Conditions
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
VGS = 0 V, ID = -250 µA
VDS = -24 V, VGS = 0 V
IGSSF Gate - Body Leakage, Forward
IGSSR Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS= 0 V
VDS = VGS, ID = -250 µA
RDS(ON)
Static Drain-Source On-Resistance
VGS = -10 V, ID = -1.0 A
VGS = -4.5 V, ID = -0.5 A
ID(on) On-State Drain Current
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
tD(on) Turn - On Delay Time
tr Turn - On Rise Time
tD(off) Turn - Off Delay Time
tf Turn - Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VGS = -10 V, VDS = -5 V
VDS = -15 V, ID = -3.4 A
VDS = -10 V, VGS = 0 V,
f = 1.0 MHz
VDD = -10 V, ID = -1 A,
VGEN = -10 V, RGEN = 6 Ω
VDS = -10 V,
ID = -3.4 A, VGS = -10 V
Min Typ Max Units
-30
TJ = 55°C
V
-2 µA
-25 µA
100 nA
-100 nA
TJ = 125°C
TJ = 125°C
TJ = 125°C
-1
-0.85
-10
-1.6
-1.25
0.11
0.15
0.17
0.24
4
-2.8
-2.5
0.13
0.21
0.2
0.32
V
Ω
A
S
350 pF
260 pF
100 pF
9 40 ns
21 40 ns
21 90 ns
8 50 ns
10 25 nC
1.6 nC
3.4 nC
NDS9400A.SAM
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Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Maximum Continuous Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = -1.25 A (Note 2)
trr Reverse Recovery Time
VGS = 0 V, IF = -2.0 A, dIF/dt = 100 A/µs
Irr Reverse Recovery Current
-1.9
-0.8 -1.3
100
1.9
A
V
ns
A
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by
design while RθCA is determined by the user's board design.
( ) = = = ( ) ×PD t
TJ−TA
RθJ A(t)
TJ−TA
RθJ C+RθCA(t)
I
2
D
t
RDS (ON ) TJ
Typical RθJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 50oC/W when mounted on a 1 in2 pad of 2oz cpper.
b. 105oC/W when mounted on a 0.04 in2 pad of 2oz cpper.
c. 125oC/W when mounted on a 0.006 in2 pad of 2oz cpper.
1a 1b 1c
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDS9400A.SAM
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NDS9400A | Single P-Channel Enhancement Mode Field Effect Transistor | Fairchild |
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