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PDF NDS9430A Data sheet ( Hoja de datos )
| Número de pieza | NDS9430A | |
| Descripción | Single P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Fairchild | |
| Logotipo |  |
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December 1997
NDS9430A
Single P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These P-Channel enhancement mode power field effect
transistors are produced using National's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulses in the avalanche and commutation modes. These
devices are particularly suited for low voltage applications such
as notebook computer power management and other battery
powered circuits where fast switching, low in-line power loss,
and resistance to transients are needed.
-5.3A, -20V. RDS(ON) = 0.05Ω @ VGS = -10V
RDS(ON) = 0.065Ω @ VGS = -6V
RDS(ON) = 0.09Ω @ VGS = -4.5V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
___________________________________________________________________________________________
54
63
72
81
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
(Note 1a)
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient (Note 1a)
Thermal Resistance, Junction-to-Case
(Note 1)
© 1997 Fairchild Semiconductor Corporation
NDS9430A
-20
± 20
± 5.3
± 20
2.5
1.2
1
-55 to 150
50
25
Units
V
V
A
W
°C
°C/W
°C/W
NDS9430A Rev.A
1 page  
Typical Electrical Characteristics (continued)
1.1
1.08
ID = -250µA
1.06
1.04
1.02
1
0.98
0.96
0.94
-50 -25 0 25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage
Variation with Temperature
20
10 VGS = 0 V
5
1
TJ = 125°C
0.1
25°C
-55°C
0.01
0.001
0
0.3 0.6 0.9 1.2
-VSD , BODY DIODE FORWARD VOLTAGE (V)
1.5
Figure 8. Body Diode Forward Voltage Variation
with Source Current and
Temperature
3000
2000
1000
500
300
200
100
0.1
C iss
C oss
f = 1 MHz
VGS = 0 V
C rss
0.3 1 3
10
-VDS , DRAIN TO SOURCE VOLTAGE (V)
30
Figure 9. Capacitance Characteristics
10
I D = -5.3A
8
V = -10V
DS
-15V
-20V
6
4
2
0
0 10 20 30
Q g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics
40
VIN
VG S
RGEN
G
-VD D
RL
D
VOUT
DUT
S
Figure 11. Switching Test Circuit
t d(on)
ton
tr
90%
td(off)
toff
tf
90%
VO U T
10%
10%
90%
VIN
10%
50%
50%
PULSE W IDTH
Figure 12. Switching Waveforms
INVERTED
NDS9430A Rev.A
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NDS9430A.PDF ] | |
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