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PDF NDS9925A Data sheet ( Hoja de datos )

Número de pieza NDS9925A
Descripción Dual N-Channel Enhancement Mode Field Effect Transistor
Fabricantes Fairchild 
Logotipo Fairchild Logotipo



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No Preview Available ! NDS9925A Hoja de datos, Descripción, Manual

May 1998
NDS9925A
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
SO-8 N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high
density process is especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for
low voltage applications such as notebook computer
power management and other battery powered circuits
where fast switching, low in-line power loss, and
resistance to transients are needed.
Features
4.5 A, 20 V. RDS(ON) = 0.060 @ VGS = 4.5 V
RDS(ON) = 0.075 @ VGS = 2.7 V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely
used surface mount package.
Dual MOSFET in surface mount package.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
D2
D2
D1
D1
N9D9S25A
SO-8
G2
S2
pin 1
G1
S1
SO-8
SOT-223
SOIC-16
54
63
72
81
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
(Note 1a)
PD Power Dissipation for Dual Operation
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJC Thermal Resistance, Junction-to-Case (Note 1)
© 1998 Fairchild Semiconductor Corporation
NDS9925A
20
±8
4.5
15
2
1.6
1
0.9
-55 to 150
78
40
Units
V
V
A
W
°C
°C/W
°C/W
NDS9925A Rev. A

1 page




NDS9925A pdf
SO-8 Tape and Reel Data and Package Dimensions, continued
SOIC-8 (FS PKG Code S1)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0774
9
September 1998, Rev. A

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