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NDT2955 PDF даташит

Спецификация NDT2955 изготовлена ​​​​«Fairchild» и имеет функцию, называемую «P-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв NDT2955
Описание P-Channel Enhancement Mode Field Effect Transistor
Производители Fairchild
логотип Fairchild логотип 

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NDT2955 Даташит, Описание, Даташиты
September 1996
NDT2955
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
Power SOT P-Channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for low
voltage applications such as notebook computer power
management and DC motor control.
-2.5A, -60V. RDS(ON) = 0.3@ VGS = -10V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
_______________________________________________________________________________________________________
DD
GD S
GS
Absolute Maximum Ratings
Symbol Parameter
TA = 25°C unless otherwise noted
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
PD Maximum Power Dissipation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
* Order option J23Z for cropped center drain lead.
(Note 1a)
(Note 1)
© 1997 Fairchild Semiconductor Corporation
NDT2955
-60
±20
-2.5
-15
3
1.3
1.1
-65 to 150
42
12
Units
V
V
A
W
°C
°C/W
°C/W
NDT2955 Rev. B2









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NDT2955 Даташит, Описание, Даташиты
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter
Conditions
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
IDSS Zero Gate Voltage Drain Current
VDS = -60 V, VGS = 0 V
IGSSF Gate - Body Leakage, Forward
IGSSR Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS= 0 V
VDS = VGS, ID = -250 µA
RDS(ON)
Static Drain-Source On-Resistance
VGS = -10 V, ID = -2.5 A
ID(on) On-State Drain Current
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
tD(on) Turn - On Delay Time
tr Turn - On Rise Time
tD(off) Turn - Off Delay Time
tf Turn - Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VGS = -4.5 V, ID = -2 A
VGS = -10 V, VDS = -5 V
VDS = -10 V, ID = -2.5 A
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
VDD = -30 V, ID = -1 A,
VGEN = -10 V, RGEN = 6
VDS = -30 V,
ID = -2.5 A, VGS = -10 V
Min Typ Max Units
-60
TJ = 125oC
V
-10 µA
-100 µA
100 nA
-100 nA
TJ = 125oC
TJ = 125oC
-2 -2.4 -4
-0.8 -2 -2.6
0.21 0.3
0.3 0.45
0.36 0.5
-12
3.5
V
A
S
570 pF
140 pF
40 pF
8 15 ns
20 40 ns
20 40 ns
5 20 ns
16 25 nC
2 5 nC
4 8 nC
NDT2955 Rev. B2









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NDT2955 Даташит, Описание, Даташиты
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Maximum Continuous Drain-Source Diode Forward Current
-2.3 A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = -2.5 A (Note2)
-1.3 V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by
design while RθCA is determined by the user's board design.
( ) = = = ( ) ×PD t
TJ TA
RθJ A(t)
TJ TA
RθJ C+RθCA(t)
I
2
D
t
RDS(ON ) TJ
Typical RθJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 42oC/W when mounted on a 1 in2 pad of 2oz copper.
b. 95oC/W when mounted on a 0.066 in2 pad of 2oz copper.
c. 110oC/W when mounted on a 0.0123 in2 pad of 2oz copper.
1a 1b 1c
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDT2955 Rev. B2










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