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NDT3055 PDF даташит

Спецификация NDT3055 изготовлена ​​​​«Fairchild» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв NDT3055
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители Fairchild
логотип Fairchild логотип 

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NDT3055 Даташит, Описание, Даташиты
May 1998
NDT3055
N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high
density process is especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for
low voltage applications such as DC motor control and
DC/DC conversion where fast switching, low in-line
power loss, and resistance to transients are needed.
Features
4 A, 60 V. RDS(ON) = 0.100 @ VGS = 10 V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
D
DD
D
S
G
SOT-223
D
GDS
G
SOT-223*
(J23Z)
S
Absolute Maximum Ratings TA = 25oC unless otherwise noted
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage - Continuous
ID Maximum Drain Current - Continuous (Note 1a)
- Pulsed
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
* Order option J23Z for cropped center drain lead.
(Note 1a)
(Note 1)
NDT3055
60
±20
4
25
3
1.3
1.1
-65 to 150
42
12
© 1998 Fairchild Semiconductor Corporation
G
S
Units
V
V
A
W
°C
°C/W
°C/W
NDT3055 Rev.B









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NDT3055 Даташит, Описание, Даташиты
Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol
Parameter
Conditions
Min Typ
OFF CHARACTERISTICS
BVDSS
BVDSS/TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
IGSSF Gate - Body Leakage, Forward
IGSSR Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25 o C
VDS = 48 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
TJ =125°C
60
63
VGS(th)
Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-Resistance
ID(ON) On-State Drain Current
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 4 A
VGS = 10 V, VDS = 10 V
VDS = 15 V, ID = 4 A
TJ =125°C
2
1.5
TJ =125°C
15
3
2.4
0.084
0.14
6
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
VDS = 30 V, VGS = 0 V,
f = 1.0 MHz
250
100
30
tD(on) Turn - On Delay Time
tr Turn - On Rise Time
VDD = 25 V, ID = 1.2 A,
VGS = 10 V, RGEN = 50
tD(off) Turn - Off Delay Time
tf Turn - Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
VDS = 40 V, ID = 4 A,
VGS = 10 V
Qgd Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
10
18
37
30
9
2.3
2.6
IS Maximum Continuous Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 2.5 A (Note 2)
0.85
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
guaranteed by design while RθCA is determined by the user's board design.
Typical RθJA using the board layouts shown below on FR-4 PCB in a still air environment:
Max Units
V
mV/o C
10 µA
100 µA
100 nA
-100 nA
4V
3
0.1
0.18
A
S
pF
pF
pF
25 ns
50 ns
65 ns
60 ns
15 nC
nC
nC
2.5 A
1.2 V
the drain pins. RθJC is
a. 42oC/W when mounted on a 1 in2 pad of
2oz Cu.
b. 95oC/W when mounted on a
pad of 2oz Cu.
0.066 in2
c. 110oC/W when mounted on a 0.00123
in2 pad of 2oz Cu.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
NDT3055 Rev.B









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NDT3055 Даташит, Описание, Даташиты
Typical Electrical Characteristics
15
VGS =10V
8.0V
12 7.0V
9
6.0V
6
5.5V
3 5.0V
4.5V
0
012345
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
2
ID = 4A
VGS =10V
1.6
1.2
0.8
0.4
-50
-25
0 25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance Variation
with Temperature.
10
VDS = 10V
8
TJ = -55°C25°C
125°C
6
4
2
0
246
VGS , GATE TO SOURCE VOLTAGE (V)
8
Figure 5. Transfer Characteristics.
3
VGS = 5.5V
2.5 6.0V
6.5V
2 7.0V
1.5 8.0V
10V
1
0.5
0
4 8 12 16
ID , DRAIN CURRENT (A)
20
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.4
0.3
0.2
0.1
0
4
ID = 2A
TA = 125°C
TA= 25°C
68
VGS , GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to- Source Voltage.
10
VGS = 0V
1
0.1
0.01
0.001
TA = 125°C
25°C
-55°C
0.0001
0
0.2 0.4 0.6 0.8
1
VSD , BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage
Variation with Current and
Temperature.
NDT3055 Rev.B










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