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PDF NDT452 Data sheet ( Hoja de datos )
| Número de pieza | NDT452 | |
| Descripción | P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Fairchild | |
| Logotipo |  |
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June 1996
NDT452AP
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
Power SOT P-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance
and provide superior switching performance. These devices
are particularly suited for low voltage applications such as
notebook computer power management and DC motor
control.
-5A, -30V. RDS(ON) = 0.065Ω @ VGS = -10V
RDS(ON) = 0.1Ω @ VGS = -4.5V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
________________________________________________________________________________
D
GD S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
(Note 1a)
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
* Order option J23Z for cropped center drain lead.
(Note 1a)
(Note 1)
© 1997 Fairchild Semiconductor Corporation
D
GS
NDT452AP
-30
±20
-5
- 15
3
1.3
1.1
-65 to 150
42
12
Units
V
V
A
W
°C
°C/W
°C/W
NDT452AP Rev. B1
1 page  
Typical Electrical Characteristics
1.1
1.08
1.06
I D = -250µA
1.04
1.02
1
0.98
0.96
0.94
-50
-25
0
25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage Variation with
Temperature.
20
10 VGS = 0V
5
1 TJ = 125°C
25°C
0.1
-55°C
0.01
0.001
0
0.4 0.8 1.2 1.6
-VSD , BODY DIODE FORWARD VOLTAGE (V)
2
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature.
2000
1000
500
C iss
C oss
300
200 f = 1 MHz
VGS = 0V
C rss
100
0.1
0.2
0.5 1
2
5 10
-V DS , DRAIN TO SOURCE VOLTAGE (V)
30
Figure 9. Capacitance Characteristics.
10
ID = -5.0A
8
V = -5V
DS
-10V
-20V
6
4
2
0
0 5 10 15 20
Q g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics.
25
VIN
VG S
RGEN
G
-VD D
RL
D
VOUT
DUT
S
Figure 11. Switching Test Circuit.
t d(on)
ton
tr
90%
td(off)
toff
tf
90%
VO U T
VIN
10%
10%
50%
10%
90%
50%
PULSE WIDTH
INVERTED
Figure 12. Switching Waveforms.
NDT452AP Rev. B1
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NDT452.PDF ] | |
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