|
|
PDF NDT452P Data sheet ( Hoja de datos )
| Número de pieza | NDT452P | |
| Descripción | P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Fairchild | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NDT452P (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
September 1996
NDT452P
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
Power SOT P-Channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for low
voltage applications such as notebook computer power
management and DC motor control.
-3A, -30V. RDS(ON) = 0.18Ω @ VGS = -10V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
____________________________________________________________________________________________________________
DD
GD S
GS
Absolute Maximum Ratings
Symbol Parameter
TA = 25°C unless otherwise noted
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
(Note 1a)
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
* Order option J23Z for cropped center drain lead.
(Note 1a)
(Note 1)
© 1997 Fairchild Semiconductor Corporation
NDT452P
-30
±20
±3
±20
3
1.3
1.1
-65 to 150
42
12
Units
V
V
A
W
°C
°C/W
°C/W
NDT452P Rev. C3
1 page  
Typical Electrical Characteristics (continued)
1.1
1.05
ID = -250µA
1
0.95
0.9
0.85
-50
-25
0 25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage Variation with
Temperature.
10
5 V GS = 0V
2
1
0.5
0.2
0.1
0.05
TJ = 125°C
25°C
-55°C
0.02
0.01
-0.4 -0.8 -1.2 -1.6
VSD , BODY DIODE FORWARD VOLTAGE (V)
-2
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature.
1000
700
500
C iss
300 C oss
200
100
0.1
f = 1 MHz
VGS = 0V
C rss
0.2
0.5 1
2
5 10
-VDS , DRAIN TO SOURCE VOLTAGE (V)
20
Figure 9. Capacitance Characteristics.
10
ID = -3A
VDS = -10V
8
6
4
2
0
0 4 8 12
Q g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics.
16
V IN
VG S
RGEN
G
-VD D
RL
D
V OUT
DUT
S
Figure 11. Switching Test Circuit.
t d(on)
ton
tr
90%
td(off)
toff
tf
90%
VO U T
VIN
10%
10%
50%
10%
90%
50%
PULSE WIDTH
INVERTED
Figure 12. Switching Waveforms.
NDT452P Rev. C3
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet NDT452P.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NDT452 | P-Channel Enhancement Mode Field Effect Transistor | Fairchild |
| NDT452 | P-Channel Enhancement Mode Field Effect Transistor | Fairchild |
| NDT452AP | P-Channel Enhancement Mode Field Effect Transistor | Fairchild |
| NDT452P | P-Channel Enhancement Mode Field Effect Transistor | Fairchild |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |