DataSheet26.com

NDT456 PDF даташит

Спецификация NDT456 изготовлена ​​​​«Fairchild» и имеет функцию, называемую «P-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв NDT456
Описание P-Channel Enhancement Mode Field Effect Transistor
Производители Fairchild
логотип Fairchild логотип 

10 Pages
scroll

No Preview Available !

NDT456 Даташит, Описание, Даташиты
December 1998
NDT456P
P-Channel Enhancement Mode Field Effect Transistor
General Description
Power SOT P-Channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process is especially tailored to
minimize on-state resistance and provide superior
switching performance. These devices are particularly
suited for low voltage applications such as notebook
computer power management, battery powered circuits,
and DC motor control.
Features
-7.5 A, -30 V. RDS(ON) = 0.030 @ VGS = -10 V
RDS(ON) = 0.045 @ VGS = -4.5 V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely
used surface mount package.
______________________________________________________________________________
DD
GD S
GS
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
(Note 1a)
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient (Note 1a)
Thermal Resistance, Junction-to-Case (Note 1)
© 1998 Fairchild Semiconductor Corporation
NDT456P
-30
±20
±7.5
±20
3
1.3
1.1
-65 to 150
42
12
Units
V
V
A
W
°C
°C/W
°C/W
NDT456P Rev. F









No Preview Available !

NDT456 Даташит, Описание, Даташиты
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter
Conditions
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
VGS = 0 V, ID = 250 µA
VDS = -24 V, VGS = 0 V
IGSSF Gate - Body Leakage, Forward
IGSSR Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS= 0 V
VDS = VGS, ID = - 250 µA
RDS(ON)
Static Drain-Source On-Resistance
VGS = -10 V, ID = -7.5 A
ID(on) On-State Drain Current
Gfs Forward Transconductance
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
tD(on) Turn - On Delay Time
tr Turn - On Rise Time
tD(off) Turn - Off Delay Time
tf Turn - Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VGS = - 4.5 V, ID = -6 A
VGS = -10 V , VDS = - 5 V
VGS = -4.5 V, VDS = - 5 V
VGS = -10 V, ID = -7.5 A
VDS = -15 V, VGS = 0 V,
f = 1.0 MHz
VDD = -15 V, ID = -7 A,
VGEN = -10 V, RGEN = 12
VDS = -10 V,
ID = -7.5 A, VGS = -10 V
Min Typ Max Units
-30
TJ = 55°C
V
-1 µA
-10 µA
100 nA
-100 nA
TJ = 125°C
TJ = 125°C
-1 -1.5 -3
-0.5 -1.1 -2.6
0.026 0.03
0.035 0.054
0.041 0.045
-20
-10
13
V
A
S
1440
905
355
pF
pF
pF
10 20 ns
65 120 ns
70 130 ns
70 130 ns
47 67 nC
5 nC
12 nC
NDT456P Rev. F









No Preview Available !

NDT456 Даташит, Описание, Даташиты
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Maximum Continuous Drain-Source Diode Forward Current
-2.5 A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = - 2.5 A (Note 2)
- 0.85 -1.2
V
trr Reverse Recovery Time
VGS = 0 V, IF = - 2.5 A dIF/dt = 100 A/µs
140 ns
Notes:
P (t) = = = I (t) × R1. D
TJ TA
R θJA (t)
TJ TA
R θJC +R θCA (t)
2
D
DS(ON)@TJ RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the
solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is defined by users. For general reference: Applications on 4.5"x5" FR-4 PCB under still air environment,
typical RθJA is found to be:
a. 42oC when mounted on a 1 in2 pad of 2oz copper.
b. 95oC when mounted on a 0.066in2 pad of 2oz copper.
c. 110oC/W when mounted on a 0.00123in2 pad of 2oz copper.
1a 1b 1c
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDT456P Rev. F










Скачать PDF:

[ NDT456.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NDT451N-Channel Enhancement Mode Field Effect TransistorFairchild
Fairchild
NDT451N-Channel Enhancement Mode Field Effect TransistorFairchild
Fairchild
NDT451ANN-Channel Enhancement Mode Field Effect TransistorFairchild
Fairchild
NDT451NN-Channel Enhancement Mode Field Effect TransistorFairchild
Fairchild

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск