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NE32584C-T1A PDF даташит

Спецификация NE32584C-T1A изготовлена ​​​​«NEC» и имеет функцию, называемую «C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET».

Детали детали

Номер произв NE32584C-T1A
Описание C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Производители NEC
логотип NEC логотип 

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NE32584C-T1A Даташит, Описание, Даташиты
DDAATTAA SSHHEEEETT
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE32584C
C to Ku BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
DESCRIPTION
The NE32584C is a Hetero Junction FET that utilizes the
hetero junction to create high mobility electrons. Its excellent
low noise and high associated gain make it suitable for DBS,
TVRO and another commercial systems.
FEATURES
• Super Low Noise Figure & High Associated Gain
NF = 0.45 dB TYP., Ga = 12.5 dB TYP. at f = 12 GHz
• Gate Length : Lg d 0.2 Pm
• Gate Width .. : Wg = 200 Pm
ORDERING INFORMATION
PART NUMBER
SUPPLYING
FORM
LEAD LENGTH
NE32584C-SL STICK
L = 1.7 mm MIN.
NE32584C-T1
Tape & reel L = 1.0 r 0.2 mm
1000 pcs./reel
NE32584C-T1A Tape & reel L = 1.0 r 0.2 mm
5000 pcs./reel
MARKING
D
PACKAGE DIMENSIONS
(Unit: mm)
1.78 ±0.2
1
L
L
D
2
4
L
3
L
0.5 TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25 qC)
Drain to Source Voltage
VDS
4.0
V
Gate to Source Voltage VGS –3.0 V
Drain Current
ID
IDSS
mA
Gate Current
IG 100 PA
Total Power Dissipation
Ptot
165 mW
Channel Temperature
Tch 150 qC
Storage Temperature
Tstg –65 to +150 qC
RECOMMENDED OPERATING CONDITION (TA = 25 qC)
1. Source
2. Drain
3. Source
4. Gate
CHARACTERISTIC
Drain to Source Voltage
Drain Current
Input Power
SYMBOL
VDS
ID
Pin
MIN.
TYP.
2
10
MAX.
3
20
0
Unit
V
mA
dBm
Document No. P12275EJ2V0DS00 (2nd edition)
(Previous No. TC-2515)
Date Published February 1997 N
Printed in Japan
©
1994









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NE32584C-T1A Даташит, Описание, Даташиты
NE32584C
ELECTRICAL CHARACTERISTICS (TA = 25 qC)
CHARACTERISTIC
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cutoff Voltage
Transconductance
Noise Figure
Associated Gain
SYMBOL
IGSO
IDSS
VGS(off)
gm
NF
Ga
MIN.
20
ð0.2
45
11.0
TYP.
0.5
60
ð0.7
60
0.45
12.5
MAX.
10
90
ð2.0
0.55
UNIT
PA
mA
V
mS
dB
dB
TEST CONDITIONS
VGS = ð3 V
VDS = 2 V, VGS = 0 V
VDS = 2 V, ID = 100 PA
VDS = 2 V, ID = 10 mA
VDS = 2 V, ID = 10 mA, f = 12 GHz
TYPICAL CHARACTERISTICS (TA = 25 qC)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
250
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
200
150
100
50
0 50 100 150 200 250
TA - Ambient Temperature - ¡C
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
VDS = 2 V
60
40
20
0
–2.0
–1.0
VGS - Gate to Source Voltage - V
0
80
VGS = 0 V
60
–0.2 V
40
–0.4 V
20 –0.6 V
–0.8 V
0 1.5 3.0
VDS - Drain to Source Voltage - V
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
24
VDS = 2 V
ID = 10 mA
20
MSG.
16
|S21s|2
12
MAG.
8
0
1 2 3 6 8 10 14 20 30
f - Frequency - GHz
2









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NE32584C-T1A Даташит, Описание, Даташиты
Gain Calculations
~S21~
MSG. =
~S12~
1 + ~'~2 ð ~S11~2 ð ~S22~2
K=
2~S12~~S21~
NE32584C
MAG. = ~S21~ (K rK2ð1)
~S12~
' = S11 • S22 ð S21 • S12
NOISE FIGURE, ASSOCIATED GAIN vs.
FREQUENCY
VDS = 2 V
ID = 10 mA
Ga
24
20
16
1.0 12
0.5
0
1
8
NF
4
2 4 6 8 10 14 20 30
f - Frequency - GHZ
NOISE FIGURE, ASSOCIATED GAIN vs.
DRAIN CURRENT
VDS = 2 V
f = 12 GHZ
Ga
14
13
12
2.0 11
1.5 10
1.0
0.5
NF
0 10 20 30
ID - Drain Current - mA
3










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Номер в каталогеОписаниеПроизводители
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