DataSheet26.com

NE33284A PDF даташит

Спецификация NE33284A изготовлена ​​​​«NEC» и имеет функцию, называемую «L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET».

Детали детали

Номер произв NE33284A
Описание L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Производители NEC
логотип NEC логотип 

10 Pages
scroll

No Preview Available !

NE33284A Даташит, Описание, Даташиты
DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE33284A
L to X BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
DESCRIPTION
The NE33284A is a Herero Junction FET that utilizes the
hetero junction to create high mobility electrons. Its excellent
low noise and high associated gain make it suitable for GPS,
TVRO and another commercial systems.
FEATURES
• Super Low Noise Figure & High Associated Gain
NF = 0.35 dB TYP., Ga = 15.0 dB TYP. at f = 4 GHz
• Gate Width: Wg = 280 µm
ORDERING INFORMATION
SUPPLYING
PART NUMBER
LEAD LENGTH
FORM
NE33284A-SL
STICK
L = 1.7 mm MIN.
NE33284A-T1
NE33284A-T1A
Tape & reel L = 1.0 ±0.2 mm
PACKAGE DIMENSIONS
(Unit: mm)
1.78 ±0.2
1
L
L
U
2
L
3
L
4
0.5 TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDS
4.0
V
Gate to Source Voltage
VGS
–3.0
V
Drain Current
ID
IDSS
mA
Total Power Dissipation
Ptot
165 mW
Channel Temperature
Tch 150 ˚ C
Storage Temperature
Tstg –65 to +150 ˚ C
RECOMMENDED OPERATING CONDITION (TA = 25 ˚C)
1. Source
2. Drain
3. Source
4. Gate
CHARACTERISTIC
Drain to Source Voltage
Drain Current
Input Power
SYMBOL
VDS
ID
Pin
MIN.
TYP.
2
10
MAX.
3
20
0
Unit
V
mA
dBm
Document No. P10874EJ2V0DS00 (2nd edition)
(Previous No. TD-2369)
Date Published October 1995 P
Printed in Japan
© 1995









No Preview Available !

NE33284A Даташит, Описание, Даташиты
NE33284A
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cutoff Voltage
Transconductance
Noise Figure
Associated Gain
SYMBOL
IGSO
IDSS
VGS(off)
gm
NF
MIN.
15
–0.2
45
Ga 9.5
13.0
TYP.
0.5
40
–0.8
70
0.75
0.35
10.5
15.0
MAX.
10
80
–2.0
1.0
0.45
UNIT
µA
mA
V
mS
dB
dB
TEST CONDITIONS
VGS = –3 V
VDS = 2 V, VGS = 0
VDS = 2 V, ID = 100 µA
VDS = 2 V, ID = 10 mA
f = 12 GHz
f = 4 GHz
VDS = 2 V
ID = 10 mA
f = 12 GHz
f = 4 GHz
PRECAUTION: Avoid high static voltage and electric fields, because this device is Hetero Junction field effect
transistor with AlGaAs shottky barrier gate.
2









No Preview Available !

NE33284A Даташит, Описание, Даташиты
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
250
200
150
100
50
0 50 100 150 200 250
TA – Ambient Temperature – ˚C
NE33284A
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VGS = 0 V
50
40
–0.2 V
30
–0.4 V
20
10 –0.6 V
0 123 45
VDS – Drain to Source Voltage – V
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
50
VDS = 2 V
40
30
20
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
24
VDS = 2 V
ID = 10 mA
20
MSG.
16
| IS21s |2
12
MAG.
10 8
0
–2.0
–1.0
VGS – Gate to Source Voltage – V
0
4
1
Gain Calculations
MSG. = | S21 |
| S12 |
MAG. = | S21 | (K ± K2 1)
| S12 |
K = 1 + | |2 | S11 |2 | S22 |2
2 | S12 || S21 |
= S11 S22 S21 S12
2 4 6 8 10 14 20 30
f – Frequency – GHz
3










Скачать PDF:

[ NE33284A.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NE33284L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FETNEC
NEC
NE33284AL to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FETNEC
NEC
NE33284A-SLL to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FETNEC
NEC
NE33284A-T1L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FETNEC
NEC

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск