NE34018-T2 PDF даташит
Спецификация NE34018-T2 изготовлена «NEC» и имеет функцию, называемую «L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET». |
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Детали детали
Номер произв | NE34018-T2 |
Описание | L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
Производители | NEC |
логотип |
16 Pages
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DATA SHEET
HJ-FET
NE34018
L to S BAND LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
DESCRIPTION
NE34018 is a n-channel HJ-FET housed in MOLD package.
FEATURES
x Low noise figure
NF = 0.6 dB TYP. at f = 2 GHz
x High associated gain
Ga = 16 dB TYP. at f = 2 GHz
x Gate width: Wg = 400 Pm
x 4 pins super mini mold
x Tape & reel packaging only available
ORDERING INFORMATION
PART NUMBER QUANTITY
NE34018-T1 3 Kpcs/Reel.
NE34018-T2 3 Kpcs/Reel.
PACKING STYLE
Embossed tape 8 mm wide. Pin 3
(Source), Pin 4 (Drain) face to
perforation side of the tape.
Embossed tape 8 mm wide. Pin 1
(Source), Pin 2 (Gate) face to
perforation side of the tape.
* Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs. (Part number for sample
order: NE34018)
ABSOLUTE MAXIMUM RATINGS (TA = 25 qC)
Drain to Source Voltage
VDS
4.0
Gate to Source Voltage
VGS
ð3.0
Gate Current
ID IDSS
Total Power Dissipation
Ptot
150
Channel Temperature
Tch
125
Storage Temperature
Tstg ð65 to +125
V
V
mA
mW
qC
qC
PACKAGE DIMENSIONS
in millimeters
2.1 ±0.2
1.25 ±0.1
PIN CONNECTIONS
1. Source
2. Gate
3. Source
4. Drain
Document No. P11618EJ3V0DS00 (3rd edition)
Date Published September 1997 N
Printed in Japan
© 1996
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NE34018
RECOMMENDED OPERATING CONDITION (TA = 25 qC)
CHARACTERISTIC
Drain to Source Voltage
Drain Current
Input Power
SYMBOL
VDS
ID
Pin
MIN.
TYP.
2
5
MAX.
3
30
+10
UNIT
V
mA
dBm
ELECTRICAL CHARACTERISTICS (TA = 25 qC)
CHARACTERISTIC
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cut off Voltage
Transconductance
Noise Figure
Associated Gain
Power Gain
Output Power at 1dB Gain
Compression Point
SYMBOL
IGSO
IDSS
VGS(off)
gm
NF
Ga
Gs
P(1dB)
MIN.
ð
30
ð0.2
30
14
TYP.
0.5
ð0.8
0.6
16
18
15
MAX.
10
120
ð2.0
ð
1.0
UNIT
PA
mA
V
mS
dB
dB
dB
dBm
TEST CONDITIONS
VGS = ð3 V
VDS = 2 V, VGS = 0 V
VDS = 2 V, ID = 100 PA
VDS = 2 V, ID = 5 mA
VDS = 2 V, ID = 5 mA, f = 2 GHz
VDS = 3 V. IDS = 30 mA (RF off)
f = 2 GHz
IDSS CLASSIFICATION
RANK
63
64
IDSS (mA)
30 to 65
60 to 120
MARKING
V63
V64
2
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TYPICAL CHARACTERISTICS (TA = 25 qC)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
250
200
150
100
50
0 50 100 150 200
TA - Ambient Temperature - ˚C
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
100
VDS = 2 V
80
60
40
20
0
–2.0
–1.0
VGS - Gate to Source Voltage - V
0
NE34018
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
VGS = 0 V
80
–0.2 V
60
40
–0.4 V
20
–0.6 V
0 12345
VDS - Drain to Source Voltage - V
NOISE FIGURE, ASSOCIATED GAIN vs.
DRAIN CURRENT
1.0
VDS = 2 V
f = 2 GHz
0.9
Ga
18
17
0.8 16
0.7 15
0.6
NF
0.5
14
0.4
0 10 20 30
ID - Drain Current - mA
3
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Номер в каталоге | Описание | Производители |
NE34018-T1 | L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET | NEC |
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