NE38018-T1 PDF даташит
Спецификация NE38018-T1 изготовлена «NEC» и имеет функцию, называемую «L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET». |
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Детали детали
Номер произв | NE38018-T1 |
Описание | L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET |
Производители | NEC |
логотип |
16 Pages
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PRELIMINARY DATA SHEET
Hetero Junction Field Effect transistor
NE38018
L to S BAND LOW NOISE AMPLIFER
N-CHANNEL HJ-FET
FEATURES
Super Low noise figure & High Associated Gain
NF = 0.55 dB typ. Ga = 14.5 dB typ. OIP3 = 22 dBm (V67), OIP3 = 23 dBm (V68) typ. at f = 2 GHz
NF = 0.4 dB typ. Ga = 20 dB typ. at f = 900 MHz
4 pins super mini mold package
Wg = 800 µm
ORDERING INFORMATION (PLAN)
Part Number
Quantity
Packing Style
NE38018-T1
3 kpcs/Reel.
Embossed tape 8 mm wide.
Pin3 (Source), Pin4 (Drain) face to perforation side of the tape.
NE38018-T2
3 kpcs/Reel.
Embossed tape 8 mm wide.
Pin1 (Source), Pin2 (Gate) face to perforation side of the tape.
Remark Please contact with responsible NEC person, if you require evaluation sample.
(Part number for sample order: NE38018)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Symbol
Drain to Source Voltage
VDS
Gate to Source Voltage
VGS
Drain Current
ID
Gate Current
IG
Total Power Temperature
Ptot
Channel Temperature
Tch
Storage Temperature
Tstg
Ratings
4.0
–3.0
IDSS
100
150
125
–65 to +125
Unit
V
V
mA
µA
mA
°C
°C
RECOMMENDED OPERATING CONDITIONS (TA = 25°C)
Parameter
Symbol
MIN.
TYP.
Drain to Source Voltage
VDS 1 2
Drain Current
ID 2 5
Input Power
Pin – –
MAX.
3
30
0
Unit
V
mA
dBm
The information in this document is subject to change without notice.
Document No. P13494EJ1V0DS00 (1st edition)
Date Published August 1998 N CP(K)
Printed in Japan
©
1998
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NE38018
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
Test Conditions
Gate to Source Leak Current
IGSO
VGS = –3 V
Saturated Drain Current
IDSS VDS = 2 V VGS = 0 V
Gate to Source Cut off Voltage
VGS(off)
VDS = 2 V IDS = 100 µA
Transconductance
gm VDS = 2 V IDS = 5 mA
Noise Figure
NF VDS = 2 V IDS = 5 mA
Associated Gain
Ga f = 2 GHz
Power Gain
Gs
Output Power at 1 dB Gain
P0(1 dB)
VDS = 3 V IDS = 30 mA
Compression Point
f = 2 GHz
Output Third-Order Distortion
OIP3
VDS = 2 V IDS = 5 mA
Intercept Point
f = 2 GHz
IDSS CLASSIFICATIONS
Rank
IDSS (mA)
67 40 to 90
68 70 to 170
Marking
V67
V68
DIMENSIONS (Unit: mm)
2.1±0.2
1.25±0.1
MIN.
–
40
–0.1
50
–
12.5
–
–
–
–
–
TYP.
1.0
–
–
–
0.55
14.5
16
17 (V67)
18 (V68)
22 (V67)
23 (V68)
MAX.
20
170
–1.5
–
1.0
–
–
–
–
–
–
Unit
µA
mA
V
mS
dB
dB
dB
dBm
dBm
PIN CONNECTIONS
1. Source
2. Gate
3. Source
4. Drain
Preliminary Data Sheet
2
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NE38018
TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
250
200
150
100
50
0 50 100 150 200
TA - Ambient Temperature -˚C
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
100
VDS = 2 V
80
60
40
20
0
–2.0
–1.0
VGS - Gate to Source Voltage - V
0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
VGS = 0 V
80
–0.2 V
60
40
–0.4 V
20
–0.6 V
0 12345
VDS - Drain to Source Voltage - V
NOISE FIGURE, ASSOCIATED GAIN vs.
DRAIN CURRENT
2.0 20
1.8 VDS = 2 V
f = 2 GHz
1.6
Ga
18
16
1.4 14
1.2 12
1.0 10
0.8 8
0.6 6
0.4 NF 4
0.2 2
0
0 5 10 15 20 25 30
ID - Drain Current - mA
Preliminary Data Sheet
3
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Номер в каталоге | Описание | Производители |
NE38018-T1 | L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET | NEC |
NE38018-T2 | L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET | NEC |
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