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NE4210M01-T1 PDF даташит

Спецификация NE4210M01-T1 изготовлена ​​​​«NEC» и имеет функцию, называемую «C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET».

Детали детали

Номер произв NE4210M01-T1
Описание C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Производители NEC
логотип NEC логотип 

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NE4210M01-T1 Даташит, Описание, Даташиты
PRELIMINARY DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE4210M01
C to Ku BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
DESCRIPTION
The NE4210M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its
excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.
FEATURES
• Super Low Noise Figure & High Associated Gain
NF = 0.8 dB TYP., Ga = 11 dB TYP. at f = 12 GHz
• 6pin super minimold package
• Gate Width: Wg = 200µm
ORDERING INFORMATION
Part Number
NE4210M01-T1
Package
6-pin super minimold
Supplying Form
Embossed tape 8 mm wide.
1, 2, 3 pins face to perforation
side of the tape
Marking
V73
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Parameter
Symbol
Ratings
Drain to Source Voltage
VDS
4.0
Gate to Source Voltage
VGS
3.0
Drain Current
ID IDSS
Gate Current
IG 100
Total Power Dissipation
Ptot
125
Channel Temperature Tch 125
Storage Temperature
Tstg 65 to +125
Unit
V
V
mA
µA
mW
°C
°C
The information in this document is subject to change without notice.
Document No. P13682EJ1V0DS00 (1st edition)
Date Published August 1998 N CP(K)
Printed in Japan
©
1998









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NE4210M01-T1 Даташит, Описание, Даташиты
NE4210M01
RECOMMENDED OPERATING CONDITION (TA = 25 °C)
Characteristic
Drain to Source Voltage
Drain Current
Input Power
Symbol
VDS
ID
Pin
MIN.
TYP.
2
10
MAX.
3
20
+5
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
Parameter
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cutoff Voltage
Transconductance
Noise Figuer
Associated Gain
Symbol
IGSO
IDSS
VGS(off)
gm
NF
Ga
Test Conditions
VGS = 3 V
VDS = 2 V, VGS = 0 V
VDS = 2 V, ID = 100 µA
VDS = 2 V, ID = 10 mA
f = 12 GHz
f = 4 GHz
VDS = 2 V
ID = 10 mA
f = 12 GHz
f = 4 GHz
Unit
V
mA
dBm
MIN.
20
0.2
50
9.0
TYP.
0.5
60
0.7
65
0.8
0.4
11.0
16.0
MAX.
10
90
2.0
1.1
Unit
µA
mA
V
mS
dB
dB
2 Preliminary Data Sheet









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NE4210M01-T1 Даташит, Описание, Даташиты
PACKAGE DIMENSIONS
6 pin super minimold (Unit: mm)
0.2
-0.1
-0
NE4210M01
0.15
-0.1
-0
0 to 0.1
PIN CONNECTIONS
(Top View)
34
25
16
0.65 0.65
1.3
2.0 ±0.2
0.7
0.9 ±0.1
(Bottom View)
43
52
61
Pin No.
1
2
3
4
5
6
Pin Name
Gate
Source
Source
Drain
Source
Source
Preliminary Data Shee
3










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Номер в каталогеОписаниеПроизводители
NE4210M01-T1C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FETNEC
NEC

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