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NE52118 PDF даташит

Спецификация NE52118 изготовлена ​​​​«NEC» и имеет функцию, называемую «L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT».

Детали детали

Номер произв NE52118
Описание L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT
Производители NEC
логотип NEC логотип 

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NE52118 Даташит, Описание, Даташиты
PRELIMINARY DATA SHEET
GaAs HETEROJUNCTION BIPOLAR TRANSISTOR
NE52118
L to S BAND LOW NOISE AMPLIFIER
NPN GaAs HBT
FEATURES
For Low Noise & High Gain amplifiers
NF = 1.0 dB TYP. Ga = 15.0 dB TYP. MSG = 15.0 dB TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 )
OIP3 = 15 dBm TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 )
4-pin super minimold package
Grounded Emitter Transistor
ORDERING INFORMATION (PLAN)
Part Number
NE52118-T1
Package
4-pin super minimold
Marking
V41
Supplying Form
Embossed tape 8 mm wide.
Pin 3, pin 4 face to perforation side of the tape.
Qty 3 kp/reel.
Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NE52118)
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Emitter Voltage
Collector to Base Voltage
Emitter to Base Voltage
Collector Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCEO
VCBO
VEBO
IC
IB
Ptot
Tj
Tstg
Ratings
5.0
3.0
3.0
7
0.3
30
+125
–65 to +125
Unit
V
V
V
mA
mA
mW
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14544EJ1V0DS00 (1st edition)
Date Published November 1999 N CP(K)
Printed in Japan
©
1999









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NE52118 Даташит, Описание, Даташиты
RECOMMENDED OPERATING CONDITIONS (TA = +25 °C)
Parameter
Collector to Emitter Voltage
Collector Current
Symbol
VCE
IC
MIN.
1.5
TYP.
2.0
3
NE52118
MAX.
3.0
6
Unit
V
mA
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
Symbol
Emitter to Base Leak Current
IEBO
Collector to Base Leak Current
ICBO
Collector to Emitter Leak
Current
ICEO
DC current gain
hFE
Base to Emitter Forward Voltage VFBE
Base to Collector Forward
Voltage
VFBC
Noise Figure
NF
Associated Gain
Ga
Out Third-Order Distortion
Intercept Point
OIP3
Noise Figure
NF
Associated Gain
Ga
Test Conditions
VEBO = 3 V
VCBO = 3 V
VCEO = 5 V
VCE = 2 V, IC = 3 mA
IBE = 100 µA
IBC = 100 µA
VCE = 2 V, IC = 3 mA,
f = 2 GHz,
ZS = ZL = 50
VCE = 2 V, IC = 5 mA,
f = 2 GHz, ZS = ZL = 50
MIN.
50
1.0
0.7
13.5
TYP.
0.2
0.2
0.5
90
1.2
1.0
1.0
15
15
1.0
16.3
MAX.
1.0
1.0
2.0
Unit
µA
µA
µA
140
1.4 V
1.3 V
1.5 dB
dB
dBm
dB
dB
2 Preliminary Data Sheet P14544EJ1V0DS00









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NE52118 Даташит, Описание, Даташиты
NE52118
TYPICAL CHARACTERISTICS (TA = +25°C)
DC CHARACTERISTICS
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
50
40
COLLECTOR CURRENT vs. DC BASE VOLTAGE
10
VCE = 2 V
8
30 6
20 4
10 2
0
0 25 50 75 100 125 150
Ambient Temperature TA (°C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
10
0
0
1 000
8
100
6 50 µA
40 µA
4
30 µA 10
2 20 µA
IB = 10 µA
0
012345
Collector to Emitter Voltage VCE (V)
1
0.1
NOISE FIGURE, ASSOCIATED GAIN vs.
COLLECTOR CURRENT
6
f = 2.0 GHz
30
VCE = 2 V
5 ZS = ZL = 50 25
4 20
Ga
3 15
2 10
NF
15
00
1 10 100
Collector Current IC (mA)
0.5 1
DC Base Voltage VBE (V)
1.5
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 2 V
1
Collector Current IC (mA)
10
Preliminary Data Sheet P14544EJ1V0DS00
3










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Номер в каталогеОписаниеПроизводители
NE52118L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBTNEC
NEC
NE52118-T1L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBTNEC
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