NE5512D PDF даташит
Спецификация NE5512D изготовлена «Philips» и имеет функцию, называемую «Dual high-performance operational amplifier». |
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Детали детали
Номер произв | NE5512D |
Описание | Dual high-performance operational amplifier |
Производители | Philips |
логотип |
4 Pages
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Philips Semiconductors Linear Products
Dual high-performance operational amplifier
Product specification
NE/SA/SE5512
DESCRIPTION
The 5512 series of high-performance operational amplifiers provides
very good input characteristics. These amplifiers feature low input
bias and voltage characteristics such as a 108 op amp with
improved CMRR and a high differential input voltage limit achieved
through the use of a bias cancellation and PNP input circuits with
collector-to-emitter clamping. The output characteristics are like
those of a 741 op amp with improved slew rate and drive capability,
yet have low supply quiescent current.
APPLICATIONS
• AC amplifiers
• RC active filters
• Transducer amplifiers
• DC gain block
• Battery operation
• Instrumentation amplifiers
FEATURES
• Low input bias < ±20nA
• Low input offset current < ±20nA
• Low input offset voltage <1mV
• Low VOS temperature drift 5µV/°C
• Low input bias temperature drift 40pA/°C
• Low input voltage noise 30nV/√Hz
• Low supply current 1.5mA/amp
• High slew rate 1.0V/µs
• High CMRR 100dB
ORDERING INFORMATION
DESCRIPTION
8-Pin Plastic Small Outline (SO) Package
8-Pin Plastic Dual In-Line Package (DIP)
8-Pin Plastic Small Outline (SO) Package
8-Pin Plastic Dual In-Line Package (DIP)
8-Pin Plastic Dual In-Line Package (DIP)
PIN CONFIGURATIONS
N Package
OUTPUT 1 1
-INPUT 1 2
+INPUT 1 3
V- 4
8 V+
7 OUTPUT 2
6 -INPUT 2
5 +INPUT 2
TOP VIEW
D Package1
+ INPUT 1 1
V- 2
+INPUT 2 3
-INPUT 2 4
1
2
8 -INPUT 1
7 OUTPUT 1
6 V+
5 OUTPUT 2
TOP VIEW
NOTE:
1. The D package pinout is not functionally identical
to the N pinout.
• High input impedance 100MΩ
• High PSRR 110dB
• High differential input voltage limit
• No crossover distortion
• Indefinite output short circuit protection
• Internally-compensated for unity gain
• 600Ω drive capability
• MIL-STD processing available
TEMPERATURE RANGE
0 to 70°C
0 to 70°C
-40 to +85°C
-40 to +85°C
-55 to +125°C
ORDER CODE
NE5512D
NE5512N
SA5512D
SA5512N
SE5512N
DWG #
0174C
0404B
0174C
0404B
0404B
August 31, 1994
78 853-0948 13721
No Preview Available ! |
Philips Semiconductors Linear Products
Dual high-performance operational amplifier
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
VCC
PD MAX
Supply voltage
Maximum power dissipation,
TA=25°C (still air)1
N package
D package
TA Operating ambient temperature range
NE5512
SA5512
SE5512
TSTG
Storage temperature range
TSOLD
Lead soldering temperature (10sec max)
NOTES:
1. The following derating factors should be applied above 25°C
N package at 9.7mW/°C
D package at 6.4mW/°C
Product specification
NE/SA/SE5512
RATING
±16
1212
800
0 to +70
-40 to +85
-55 to +125
-65 to +150
300
UNIT
V
mW
mW
°C
°C
°C
°C
°C
August 31, 1994
79
No Preview Available ! |
Philips Semiconductors Linear Products
Dual high-performance operational amplifier
Product specification
NE/SA/SE5512
ELECTRICAL PERFORMANCE CHARACTERISTICS
VCC = ±15V, TA = 25°C over temperature range, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
VOS Input offset voltage
RS=100Ω
TA=+25°C
Over temp.
∆VOS/∆T
IOS Input offset current
RS=100kΩ
TA=+25°C
Over temp.
∆IOS/∆T
IBIAS
Input bias current
RS=100kΩ
TA=+25°C
Over temp.
∆IBIAS/∆T
RIN Input resistance differential
VCM Input common mode range
TA=+25°C
TA=+25°C
Over temp.
CMRR
Input common-mode rejection
ratio
VCC=±15V
VIN=±13.5V
TA=+25°C
VIN=±13V
Over temp.
AV
SR
GBW
Large-signal voltage gain
Slew rate
Small-signal unity gain band-
width
RL=2kΩ TA=25°C
VO=±10V over temp.
TA=25°C
TA=25°C
θM
VOUT
Phase margin
Output voltage swing
VOUT
Output voltage swing
TA=25°C
RL=2kΩ
TA=25°C
Over temp.
RL=600Ω1
TA=25°C
Over temp.
ICC Power supply current
RL=Open
TA=25°C
Over temp.
PSRR
Power supply rejection ratio
Over temp.
AA Amplifier-to-amplifier coupling
THD
Total harmonic distortion
VNOISE
INOISE
ISC
Input noise voltage
Input noise current
Short-circuit current
f=1kHz to 20kHz,
TA=25°C
f=10kHz
TA=25°C
VO=7VRMS
f=1kHz
TA=25°C
f=1kHz
TA=25°C
±15V, TA=25°C
NOTES:
1. Not to exceed maximum package power dissipation.
SE5512
Min Typ Max
NE/SA5512
Min Typ Max
UNIT
0.7 2
13
4
15
1.5 6
5
mV
µV/°C
3 10
4 20
30
6 20
8 30
nA
40 pA/°C
3 10
4 20
6 20
8 30
30 40
100 100
±13.5 ±13.7
±13 ±13.2
±13.5 ±13.7
±13 ±13.2
nA
pA/°C
MΩ
V
70 100
70 100
dB
50
25
200
0.6 1
3
45
50
25
200
1
3
45
V/mV
V/µs
MHz
degree
±13 ±13.5
±12.5 ±13
±13 ±13.5
±12.5 ±13
V
±10 ±11.5
±7.5 ±9
±10 ±11.5
±8 ±9
V
3.4 5
3.6 5.5
80 100
-120
3.4 5
3.6 5.5
80 100
-120
mA
dB
dB
0.01 0.01 %
30 30 nV/√Hz
0.2 0.2 pA/√Hz
40 40 mA
August 31, 1994
80
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Номер в каталоге | Описание | Производители |
NE5512 | Dual high-performance operational amplifier | Philips |
NE5512D | Dual high-performance operational amplifier | Philips |
NE5512N | Dual high-performance operational amplifier | Philips |
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