DataSheet26.com

NE5520279A PDF даташит

Спецификация NE5520279A изготовлена ​​​​«NEC» и имеет функцию, называемую «NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET».

Детали детали

Номер произв NE5520279A
Описание NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET
Производители NEC
логотип NEC логотип 

7 Pages
scroll

No Preview Available !

NE5520279A Даташит, Описание, Даташиты
NEC'S 3.2 V, 2 W, L&S BAND NE5520279A
MEDIUM POWER SILICON LD-MOSFET
FEATURES
• LOW COST PLASTIC SURFACE MOUNT PACKAGE:
5.7x5.7x1.1 mm MAX
• HIGH OUTPUT POWER:
+32 dBm TYP
• HIGH LINEAR GAIN:
10 dB TYP @ 1.8 GHz
• HIGH POWER ADDED EFFICIENCY:
45% TYP at 1.8 GHz
• SINGLE SUPPLY:
2.8 to 6.0 V
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 79A
4.2 MAX.
(Bottom View)
1.5±0.2
Source
Source
Gate
Drain
Gate
Drain
0.4±0.15
5.7 MAX.
0.8 MAX.
3.6±0.2
DESCRIPTION
NEC's NE5520279A is an N-Channel silicon power laterally
diffused MOSFET specially designed as the power ampliÞer
for mobile and Þxed wireless applications. Die are manu-
factured using NEC's NEWMOS technology (NEC's 0.6 µm
WSi gate lateral MOSFET) and housed in a surface mount
package.
APPLICATIONS
• DIGITAL CELLULAR PHONES:
3.2 V DCS1800 Handsets
• 0.7-2.5 GHz FIXED WIRELESS ACCESS
• W-LAN
• SHORT RANGE WIRELESS
• RETAIL BUSINESS RADIO
• SPECIAL MOBILE RADIO
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
CHARACTERISTICS
UNITS
POUT Output Power
dBm
GL Linear Gain
dB
ηADD Power Added EfÞciency
%
ID Drain Current
mA
IGSS Gate-to-Source Leakage Current
nA
IDSS Saturated Drain Current
(Zero Gate Voltage Drain Current)
nA
VTH Gate Threshold Voltage
V
gm Transconductance
S
BVDSS Drain-to-Source Breakdown Voltage
V
RTH Thermal Resistance
°C/W
NE5520279A
79A
MIN TYP MAX
30.5 32.0
10
40 45
800
100
100
1.0 1.4
1.3
15 18
1.9
8
Notes:
1. DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
2. Pin = 5 dBm
TEST CONDITIONS
f = 1.8 GHz, VDS = 3.2 V,
IDSQ = 700 mA, PIN = 25 dBm, except
PIN = 5 dBm for Linear Gain
VGS = 5.0 V
VDS = 6.0 V
VDS = 3.5 V, IDS = 1 mA
VDS = 3.5 V, IDS = 700 mA
IDSS = 10 µA
Channel-to-Case
California Eastern Laboratories









No Preview Available !

NE5520279A Даташит, Описание, Даташиты
NE5520279A
ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VDS Drain Supply Voltage
V 15.0
VGS Gate Supply Voltage
V 5.0
ID Drain Current
A 0.6
ID
Drain Current (Pulse Test)2
A
1.2
PT Total Power Dissipation
W 12.5
TCH Channel Temperature
°C 125
TSTG
Storage Temperature
°C -55 to +125
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Duty Cycle 50%, Ton = 1 s.
ORDERING INFORMATION
PART NUMBER
QTY
NE5520279A-T1
• 12 mm wide embossed taping.
• Gate pin faces the perforation side of
the tape.
• 1 kpcs/Reel
RECOMMENDED OPERATING LIMITS
SYMBOLS PARAMETERS
UNITS TYP MAX
VDS Drain to Source Voltage V 3.0 6.0
VGS Gate Supply Voltage
V 2.0 3.0
IDS Drain Current1
A 0.8 1.0
PIN Input Power
dBm 25
30
f = 1.8 GHz, VDS = 3.2 V
Note:
1. Duty Cycle 50%, Ton 1 s.
LARGE SIGNAL IMPEDANCE
(VDS = 3.2 V, ID = 700 mA, f = 1.8 GHz)
FREQUENCY (GHz)
Zin ()
ZOL () 1
1.8
1.77 j6.71
1.25 j5.73
Note:
1. ZOL is the conjugate of optimum load impedance at given
voltage, idling current, input power.









No Preview Available !

NE5520279A Даташит, Описание, Даташиты
TYPICAL PERFORMANCE CURVES (TA = 25°C)
OUTPUT POWER, DRAIN CURRENT
EFFICIENCY vs. INPUT POWER
35
f = 1.8 GHz
VDS = 3.2 V
IDQ = 300 mA
30
Pout
1250
1000 100
25 750 75
ηd
IDS
20
η dd
500
50
15 250 25
10 0 0
5 10 15 20 25 30
Input Power,Pin (dBm)
OUTPUT POWER, DRAIN CURRENT
EFFICIENCY vs. INPUT POWER
35
f = 1.8 GHz
VDS = 3.2 V
IDQ = 700 mA
30
Pout
2500
2000 100
25 1500 75
ηd
20
IDS
1000
50
η dd
15 500 25
10 0 0
5 10 15 20 25 30
Input Power,Pin (dBm)
OUTPUT POWER, DRAIN CURRENT
EFFICIENCY vs. INPUT POWER
40
f = 2.00 GHz
VDS = 5.0 V
IDQ = 300 mA
35
2500
Pout
2000 100
30
ηd
η dd
25
IDS
20
15
10
15 20 25 30
Input Power,Pin (dBm)
1500 75
1000 50
500 25
00
35
NE5520279A
OUTPUT POWER, DRAIN CURRENT
EFFICIENCY vs. GATE TO SOURCE VOLTAGE
35
f = 1.8 GHz
VDS = 3.2 V
Pin = 25 dBm
30
25
20
Pout
IDS
ηd
η dd
1250
1000 100
750 75
500 50
15 250 25
10 0 0
0 1 2 34
Gate to Source Voltage, Vgs (V)
IMD vs. TWO TONE OUTPUT POWER
-10
f = 1.8 GHz
f = 1 MHz
-20 VDS = 3.2 V
IDQ = 700 mA
-30
IM3 IM5
-40
-50
-60
-70
10 15 20 25 30 35
Average Two Tone Ouput Power, Pout (dBm)
OUTPUT POWER, DRAIN CURRENT
EFFICIENCY vs. GATE TO SOURCE VOLTAGE
40
f = 2.00 GHz
VDS = 5.0 V
Pin = 27 dBm
35
Pout
2500
2000 100
30
ηd
η dd
25
IDS
20
1500 75
1000 50
500 25
15 0 0
0 1 2 34
Gate to Source Voltage, Vgs (V)










Скачать PDF:

[ NE5520279A.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NE5520279ANECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFETNEC
NEC
NE5520279A-T1NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFETNEC
NEC

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск