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Número de pieza NTHD4N02FT1G
Descripción Power MOSFET and Schottky Diode
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NTHD4N02F
Power MOSFET and
Schottky Diode
20 V, 3.9 A, N−Channel, with 3.7 A
Schottky Barrier Diode, ChipFETt
Features
Leadless SMD Package Featuring a MOSFET and Schottky Diode
40% Smaller than TSOP−6 Package with Better Thermals
Super Low Gate Charge MOSFET
Ultra Low VF Schottky
Pb−Free Package is Available
Applications
Fast Switching, low Gate Charge for Dc to Dc Buck and Boost
Converters
Li−Ion Battery Applications in Cell Phones, PDAs, DSCs, and Media
Players
Load Side Switching
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current
Steady TJ = 25°C
State TJ = 85°C
t v 5 s TJ = 25°C
Pulsed Drain Current
tp=10 ms
Power Dissipation
Steady TJ = 25°C
State TJ = 85°C
t v 5 s TJ = 25°C
Continuous Source Current (Body Diode)
Operating Junction and Storage
Temperature
VDSS
VGS
ID
IDM
PD
IS
TJ, TSTG
20
±12
2.9
2.1
3.9
12
0.91
0.36
2.1
2.6
−55 to 150
V
V
A
A
W
A
°C
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260 °C
SCHOTTKY DIODE MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
VRRM
20
V
DC Blocking Voltage
VR 20 V
Average Rectified
Forward Current
Steady
State
tv5s
TJ = 25°C
IF
2.2 A
3.7 A
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
V(BR)DSS
20 V
MOSFET
RDS(on) TYP
60 mW @ 4.5 V
80 mW @ 2.5 V
VR MAX
20 V
SCHOTTKY DIODE
VF TYP
0.35 V
ID MAX
3.9 A
IF MAX
3.7 A
D1 A
G1
S1
N−Channel MOSFET
C
SCHOTTKY DIODE
ChipFET]
CASE 1206A
STYLE 3
PIN
CONNECTIONS
A1
8C
A2
S3
7C
6
D
G4
5D
MARKING
DIAGRAM
1
2
3
4
C2 = Specific Device Code
M = Month Code
ORDERING INFORMATION
Device
Package
Shipping
NTHD4N02FT1 ChipFET
NTHD4N02FT1G
ChipFET
(Pb−Free)
3000/Tape & Reel
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
October, 2004 − Rev. 7
1
Publication Order Number:
NTHD4N02F/D

1 page




NTHD4N02FT1G pdf
NTHD4N02F
TYPICAL SCHOTTKY PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
10 10
TJ = 150°C
1
1 TJ = 150°C
TJ = 25°C
0.1
0.00
0.20
TJ = −55°C
0.40 0.60
0.80
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 11. Typical Forward Voltage
0.1
0.00
TJ = 25°C
0.20 0.40 0.60
VF, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (VOLTS)
Figure 12. Maximum Forward Voltage
0.80
100E−3
10E−3
TJ = 150°C
TJ = 100°C
100E−3
10E−3
TJ = 150°C
TJ = 100°C
1E−3
1E−3
100E−6
TJ = 25°C
10E−6
0
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 13. Typical Reverse Current
100E−6
TJ = 25°C
10E−6
20 0
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 14. Maximum Reverse Current
20
3.5
3
2.5
2
1.5
1
0.5
0
25
dc
square wave
Ipk/Io = p
Ipk/Io = 5
Ipk/Io = 10
Ipk/Io = 20
freq = 20 kHz
45 65 85 105 125 145
TL, LEAD TEMPERATURE (°C)
Figure 15. Current Derating
165
1.4
1.2 Ipk/Io = p
1 Ipk/Io = 5
Ipk/Io = 10
0.8
Ipk/Io = 20
0.6
square wave
dc
0.4
0.2
0
0 0.5 1 1.5 2 2.5 3 3.5
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 16. Forward Power Dissipation
http://onsemi.com
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