NTHD4P02FT1G PDF даташит
Спецификация NTHD4P02FT1G изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET and Schottky Diode». |
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Детали детали
Номер произв | NTHD4P02FT1G |
Описание | Power MOSFET and Schottky Diode |
Производители | ON Semiconductor |
логотип |
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NTHD4P02F
Power MOSFET and
Schottky Diode
−20 V, −3.0 A, Single P−Channel with
3.0 A Schottky Barrier Diode, ChipFETt
Features
• Leadless SMD Package Featuring a MOSFET and Schottky Diode
• 40% Smaller than TSOP−6 Package with Similar Thermal
Characteristics
• Independent Pinout to each Device to Ease Circuit Design
• Ultra Low VF Schottky
• Pb−Free Package is Available
Applications
• Li−Ion Battery Charging
• High Side DC−DC Conversion Circuits
• High Side Drive for Small Brushless DC Motors
• Power Management in Portable, Battery Powered Products
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Units
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current
Steady TJ = 25°C
State TJ = 85°C
t v 5 s TJ = 25°C
Pulsed Drain
Current
tp = 10 ms
VDSS
VGS
ID
ID
IDM
−20
±12
−2.2
−1.6
−3.0
−9.0
V
V
A
A
A
Power Dissipation
Steady TJ = 25°C
State TJ = 85°C
t v 5 s TJ = 25°C
Continuous Source Current (Body Diode)
Operating Junction and Storage
Temperature
PD 1.1
0.6
2.1
IS −2.1
TJ, TSTG −55 to 150
W
A
°C
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260 °C
SCHOTTKY DIODE MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Peak Repetitive Reverse Voltage
VRRM
20
V
DC Blocking Voltage
VR 20 V
Average Rectified
Forward Current
Steady
State
tv5s
TJ = 25°C
IF
2.2 A
3.0 A
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
© Semiconductor Components Industries, LLC, 2004
October, 2004 − Rev. 4
1
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V(BR)DSS
−20 V
MOSFET
RDS(on) TYP
−130 mW @ −4.5 V
200 mW @ −2.5 V
VR MAX
20 V
SCHOTTKY DIODE
VF TYP
0.510 V
ID MAX
−3.0 A
IF MAX
3.0 A
SA
G
D
P−Channel MOSFET
C
SCHOTTKY DIODE
ChipFET
CASE 1206A
STYLE 3
PIN
CONNECTIONS
MARKING
DIAGRAM
1
A
2
A
S
3
G
4
8
C
7
C
6
D
D
5
1
2
3
4
C2 = Specific Device Code
M = Month Code
8
7
6
5
ORDERING INFORMATION
Device
Package
Shipping†
NTHD4P02FT1 ChipFET 3000/Tape & Reel
NTHD4P02FT1G ChipFET 3000/Tape & Reel
(Pb−free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTHD4P02F/D
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NTHD4P02F
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Junction−to−Ambient (Note 1)
Steady State
tv5s
TJ = 25°C
RqJA
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq [1 oz] including traces).
Max
110
60
Units
°C/W
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
V(BR)DSS
IDSS
IGSS
VGS = 0 V, ID = −250 mA
VDS = −16 V, VGS = 0 V, TJ = 25°C
VDS = −16 V, VGS = 0 V, TJ = 85°C
VDS = 0 V, VGS = ±12 V
Gate Threshold Voltage
Drain−to−Source On− Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
VGS(TH)
RDS(on)
gFS
VGS = VDS, ID = −250 mA
VGS = −4.5, ID = −2.2 A
VGS = −2.5, ID = −1.7 A
VDS = −10 V, ID = −1.7 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS (Note 3)
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
VGS = 0 V, f = 1.0 MHz,
VDS = −10 V
VGS = −4.5 V, VDS = −10 V,
ID = −2.2 A
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS (Note 2)
VGS = −4.5 V, VDD = −16 V,
ID = −2.2 A, RG = 2.5 W
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
VSD
tRR
ta
tb
QRR
VGS = 0 V,
IS = −2.1 A
VGS = 0 V, IS = −2.1 A ,
dIS/dt = 100 A/ms
Min
−20
−0.6
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Maximum Instantaneous Forward Voltage
VF
Maximum Instantaneous Reverse Current
Maximum Voltage Rate of Change
IR
dv/dt
IF = 0.1 A
IF = 0.5 A
IF = 1.0 A
VR = 10 V
VR = 20 V
VR = 20 V
Non−Repetitive Peak Surge Current
IFSM
Halfwave, Single Pulse, 60 Hz
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
Typ
−23
−0.75
0.130
0.200
5.0
185
95
30
3.0
0.2
0.5
0.9
7.0
13
33
27
−0.85
32
10
22
15
Typ
0.425
0.480
0.510
10,000
Max
−1.0
−5.0
±100
−1.2
0.155
0.240
300
150
50
6.0
12
25
50
40
−1.15
Max
0.575
1.0
5.0
23
Units
V
mA
nA
V
W
S
pF
nC
ns
V
ns
nC
Units
V
mA
V/ns
A
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NTHD4P02F
TYPICAL MOSFET PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
4
VGS = −6 V to −3 V
TJ = 25°C
VGS = −2.4 V
−2 V
−2.2 V
3
4
VDS ≥ −10 V
3
−1.8 V
2
−1.6 V
1 −1.4 V
−1.2 V
0
01 234567
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
8
Figure 1. On−Region Characteristics
2
TC = −55°C
1
25°C
100°C
0
0.5 1 1.5 2 2.5
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
3
0.5
ID = −2.1 A
TJ = 25°C
0.4
0.3
0.2
0.1
0
12 3 4 5
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
6
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
0.25
0.225
0.2
TJ = 25°C
VGS = −2.5 V
0.175
0.15
0.125
VGS = −4.5 V
0.1
0.5 1.5 2.5 3.5
−ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.6
ID = −2.1 A
VGS = −4.5 V
1.4
1.2
10000
VGS = 0 V
1000
TJ = 150°C
1 100 TJ = 100°C
0.8
0.6
−50
−25 0 25 50 75 100 125
−TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
150
10
2 4 6 8 10 12 14 16 18 20
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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NTHD4P02FT1 | Power MOSFET and Schottky Diode | ON Semiconductor |
NTHD4P02FT1G | Power MOSFET and Schottky Diode | ON Semiconductor |
NTHD4P02FT1G | Power MOSFET and Schottky Diode | ON Semiconductor |
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