NTP65N02 PDF даташит
Спецификация NTP65N02 изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET 65 A / 24 V N-Channel TO-220 / D2PAK». |
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Детали детали
Номер произв | NTP65N02 |
Описание | Power MOSFET 65 A / 24 V N-Channel TO-220 / D2PAK |
Производители | ON Semiconductor |
логотип |
4 Pages
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NTB65N02R, NTP65N02R
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Power MOSFET
65 A, 24 V N-Channel
TO-220, D2PAK
Features
• Planar HD3e Process for Fast Switching Performance
• Low RDSon to Minimize Conduction Loss
• Low Ciss to Minimize Driver Loss
• Low Gate Charge
• Fast Switching
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol Value Unit
Drain–to–Source Voltage
Gate–to–Source Voltage
Continuous
Drain Current (Continuous @ TA = 25°C (Note 3)
Single Pulse (tp = 10 ms)
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature
Single Pulse Drain–to Source Avalanche
Energy – Starting TJ=25°C
(VDD = 50 Vdc, VGS = 5 Vdc, IL = Apk, L = 1 mH,
RG = 25 W)
Thermal Resistance
Junction–to–Case
Junction–to–Ambient (Note 1)
Junction–to–Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8” from Case for 10 Seconds
VDSS
VGS
ID
IDM
PD
TJ and
Tstg
EAS
RqJC
RqJA
RqJA
TL
24
±20
65
160
78
–55 to
150
TBD
Vdc
Vdc
A
A
W
°C
mJ
1.6 °C/W
67
120
260 °C
1. When surface mounted to an FR4 board using 1 inch pad size, (Cu Area
1.127 in2).
2. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in2).
3. Chip current capability limited by package.
PIN ASSIGNMENT
PIN FUNCTION
1 Gate
2 Drain
3 Source
4 Drain
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
http://onsemi.com
65 A, 24 V
RDS(on) = 8.3 mW (TYP)
D
G
S
MARKING
DIAGRAMS
4 TO–220AB
CASE 221A
Style 5
xxxxx
YWW
123
4 D2PAK
xxxxx
CASE 418B
YWW
2 Style 2
13
xxxxx
Y
WW
= Specific Device Code
= Year
= Work Week
ORDERING INFORMATION
Device
NTB65N02R
NTB65N02RT4
NTP65N02R
Package
D2PAK
D2PAK
TO–220AB
Shipping
50 Units/Rail
800 Tape & Reel
50 Units/Rail
© Semiconductor Components Industries, LLC, 2002
October, 2002 – Rev. 0
1
Publication Order Number:
NTB65N02R/D
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NTB65N02R, NTP65N02R
ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless otherwise specified)
Characteristics
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage (Note 4)
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(br)DSS
24
–
27.5
25.5
Vdc
–
– mV/°C
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
mAdc
– – 1.5
– – 15
Gate–Body Leakage Current
(VGS = ±20 Vdc, VDS = 0 Vdc)
IGSS
nAdc
– – ±100
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage (Note 4)
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Vdc
1.0 1.5 2.0
– –4.1 – mV/°C
Static Drain–to–Source On–Resistance (Note 4)
(VGS = 4.5 Vdc, ID = 15 Adc)
(VGS = 10 Vdc, ID = 20 Adc)
(VGS = 10 Vdc, ID = 30 Adc)
Forward Transconductance (Note 4)
(VDS = 10 Vdc, ID = 15 Adc)
RDS(on)
mW
– 10.5 12.5
– 8.3 10.5
– 9.5 –
gFS Mhos
– 20 –
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 24 Vdc, VGS = 0 V f = 1 MHz)
SWITCHING CHARACTERISTICS (Note 5)
Ciss
Coss
Crss
–
1050 1470
pF
– 394 550
– 88 120
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VGS = 5 Vdc, VDD = 10 Vdc,
ID = 30 Adc, RG = 3 W)
td(on)
tr
td(off)
tf
– 11.2 20 ns
– 52 100
– 10 20
– 4 10
Gate Charge
(VGS = 4.5 Vdc, ID = 30 Adc,
VDS = 10 Vdc) (Note 4)
SOURCE–DRAIN DIODE CHARACTERISTICS
QT – 8.4 12 nC
Q1 – 3.7 –
Q2 – 4.04 –
Forward On–Voltage
(IS = 20 Adc, VGS = 0 Vdc) (Note 4)
(IS = 30 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
–
0.88 1.2
Vdc
– 1.10 –
– 0.80 –
Reverse Recovery Time
(IS = 20 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 4)
Reverse Recovery Stored Charge
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
5. Switching characteristics are independent of operating junction temperatures.
trr
ta
tb
QRR
– 15.5 –
– 12.6 –
– 2.6 –
– 0.005 –
ns
mC
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NTB65N02R, NTP65N02R
PACKAGE DIMENSIONS
Q
H
Z
B
4
1 23
F
T
TO–220AB
CASE 221A–09
ISSUE AA
–T–
SEATING
PLANE
C
S
A
U
K
L
V
G
N
D
R
J
D2PAK
CASE 418B–04
ISSUE G
C
E
–B–
V
W
4
123
S
–T–
SEATING
PLANE
G
K
D 3 PL
0.13 (0.005) M T B M
A
W
J
H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
INCHES
DIM MIN MAX
A 0.570 0.620
B 0.380 0.405
C 0.160 0.190
D 0.025 0.035
F 0.142 0.147
G 0.095 0.105
H 0.110 0.155
J 0.018 0.025
K 0.500 0.562
L 0.045 0.060
N 0.190 0.210
Q 0.100 0.120
R 0.080 0.110
S 0.045 0.055
T 0.235 0.255
U 0.000 0.050
V 0.045 ---
Z --- 0.080
MILLIMETERS
MIN MAX
14.48 15.75
9.66 10.28
4.07 4.82
0.64 0.88
3.61 3.73
2.42 2.66
2.80 3.93
0.46 0.64
12.70 14.27
1.15 1.52
4.83 5.33
2.54 3.04
2.04 2.79
1.15 1.39
5.97 6.47
0.00 1.27
1.15 ---
--- 2.04
STYLE 5:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B-01 THRU 418B-03 OBSOLETE, NEW
STANDARD 418B-04.
INCHES
DIM MIN MAX
A 0.340 0.380
B 0.380 0.405
C 0.160 0.190
D 0.020 0.035
E 0.045 0.055
F 0.310 0.350
G 0.100 BSC
H 0.080 0.110
J 0.018 0.025
K 0.090 0.110
L 0.052 0.072
M 0.280 0.320
N 0.197 REF
P 0.079 REF
R 0.039 REF
S 0.575 0.625
V 0.045 0.055
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
MILLIMETERS
MIN MAX
8.64 9.65
9.65 10.29
4.06 4.83
0.51 0.89
1.14 1.40
7.87 8.89
2.54 BSC
2.03 2.79
0.46 0.64
2.29 2.79
1.32 1.83
7.11 8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14 1.40
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Номер в каталоге | Описание | Производители |
NTP65N02 | Power MOSFET 65 A / 24 V N-Channel TO-220 / D2PAK | ON Semiconductor |
NTP65N02R | Power MOSFET 65 A / 24 V N-Channel TO-220 / D2PAK | ON Semiconductor |
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