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NTP75N06 PDF даташит

Спецификация NTP75N06 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NTP75N06
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTP75N06 Даташит, Описание, Даташиты
NTP75N06, NTB75N06
Power MOSFET
75 Amps, 60 Volts, N−Channel
TO−220 and D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
Pb−Free Packages are Available
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 10 MW)
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tpv10 ms)
Drain Current
− Continuous @ TA = 25°C
− Continuous @ TA = 100°C
− Single Pulse (tpv10 ms)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature Range
VDSS
VDGR
VGS
VGS
60
60
"20
"30
Vdc
Vdc
Vdc
ID
ID
IDM
PD
TJ, Tstg
75
50
225
214
1.4
2.4
−55 to
+175
Adc
Apk
W
W/°C
W
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc, L = 0.3 mH
IL(pk) = 75 A, VDS = 60 Vdc)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10 seconds
EAS
RqJC
RqJA
TL
844 mJ
°C/W
0.7
62.5
260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
http://onsemi.com
75 AMPERES, 60 VOLTS
RDS(on) = 9.5 mW
N−Channel
D
G
S
MARKING
DIAGRAMS
4
Drain
4
TO−220
CASE 221A
STYLE 5
75N06
AYWW
1
2
3
1
Gate
3
Source
2
Drain
4
Drain
4 D2PAK
75N06
CASE 418B
AYWW
2 STYLE 2
32
1 Drain 3
Gate
Source
75N06
A
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. 2
1
Publication Order Number:
NTP75N06/D









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NTP75N06 Даташит, Описание, Даташиты
NTP75N06, NTB75N06
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 1)
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage (Note 1)
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 1)
(VGS = 10 Vdc, ID = 37.5 Adc)
Static Drain−to−Source On−Voltage (Note 1)
(VGS = 10 Vdc, ID = 75 Adc)
(VGS = 10 Vdc, ID = 37.5 Adc, TJ = 150°C)
Forward Transconductance (Note 1) (VDS = 15 Vdc, ID = 37.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 30 Vdc, ID = 75 Adc,
VGS = 10 Vdc, RG = 9.1 W) (Note 1)
Fall Time
Gate Charge
(VDS = 48 Vdc, ID = 75 Adc,
VGS = 10 Vdc) (Note 1)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 75 Adc, VGS = 0 Vdc) (Note 1)
(IS = 75 Adc, VGS = 0 Vdc, TJ = 150°C)
Reverse Recovery Time
(IS = 75 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 1)
Reverse Recovery Stored Charge
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
2. Switching characteristics are independent of operating junction temperatures.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
VSD
trr
ta
tb
QRR
Min Typ Max Unit
60 71
− 73
Vdc
− mV/°C
mAdc
− − 10
− − 100
±100
nAdc
Vdc
2.0 2.8 4.0
− 8.0 − mV/°C
mW
− 8.2 9.5
Vdc
− 0.72 0.86
− 0.63 −
− 40.2 − mhos
− 3220 4510 pF
− 1020 1430
− 234 330
− 16 25 ns
− 112 155
− 90 125
− 100 140
92 130
nC
− 14 −
− 44 −
− 1.0 1.1 Vdc
− 0.9 −
− 77 −
ns
− 49 −
− 28 −
− 0.16 −
mC
http://onsemi.com
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NTP75N06 Даташит, Описание, Даташиты
NTP75N06, NTB75N06
160
140 VGS = 10 V
VGS = 6.5 V
120
VGS = 7 V
VGS = 6 V
100
VGS = 8 V
80
VGS = 9 V
VGS = 5.5 V
60
40 VGS = 5 V
20
VGS = 4.5 V
0
01 234
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
160
VDS w 10 V
140
120
100
80
60
40
20
0
2.5
TJ = 25°C
TJ = 100°C
TJ = −55°C
3 3.5 4 4.5 5 5.5 6 6.5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
7
0.015
0.013
VGS = 10 V
0.011
0.009
0.007
0.005
TJ = 100°C
TJ = 25°C
TJ = −55°C
0.015
0.013
VGS = 15 V
0.011
0.009
0.007
0.005
TJ = 100°C
TJ = 25°C
TJ = −55°C
0.003
0
0.003
20 40 60 80 100 120 140 160
0
20 40 60 80 100 120 140 160
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2
ID = 37.5 A
1.8 VGS = 10 V
10000
VGS = 0 V
TJ = 150°C
1.6
1000
1.4 TJ = 125°C
1.2
100 TJ = 100°C
1
0.8
0.6
−50 −25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
10
0 10 20 30 40 50 60
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
3










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