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Número de pieza | NTR0202PLT3 | |
Descripción | Power MOSFET &20 V / &400 mA / P&Channel SOT&23 Package | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de NTR0202PLT3 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! NTR0202PL
Power MOSFET
−20 V, −400 mA, P−Channel
SOT−23 Package
Features
• Low RDS(on) Provides Higher Efficiency and Extends Battery Life
RDSon = 0.80 W, VGS = −10 V
RDSon = 1.10 W, VGS = −4.5 V
• Miniature SOT−23 Surface Mount Package Saves Board Space
• Pb−Free Package is Available
Applications
• DC−DC Converters
• Computers
• Printers
• PCMCIA Cards
• Cellular and Cordless Telephones
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Continuous Drain Current @ TA = 25°C
Pulsed Drain Current (tp ≤ 10 ms)
Total Power Dissipation @ TA = 25°C (Note 1)
Operating and Storage Temperature Range
VDSS
VGS
ID
IDM
PD
TJ, Tstg
−20
$20
−0.4
−1.0
225
− 55 to
150
V
V
A
mW
°C
Thermal Resistance − Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 s
RqJA
TL
556 °C/W
260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
http://onsemi.com
V(BR)DSS
−20 V
RDS(on) TYP
550 mW @ −10 V
ID MAX
−400 mA
P−Channel
D
G
S
3
1
2
SOT−23
CASE 318
STYLE 21
MARKING DIAGRAM/
PIN ASSIGNMENT
3
Drain
PLW
1
Gate
2
Source
PL = Specific Device Code
W = Work Week
ORDERING INFORMATION
Device
Package
Shipping†
NTR0202PLT1 SOT−23 3000 Tape & Reel
NTR0202PLT1G SOT−23 3000 Tape & Reel
(Pb−Free)
NTR0202PLT3 SOT−23 10,000 Tape & Reel
NTR0202PLT3G SOT−23 10,000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
July, 2004 − Rev. 2
1
Publication Order Number:
NTR0202PL/D
1 page NTR0202PL
PACKAGE DIMENSIONS
V
D
A
L
3
12
BS
G
SOT−23 (TO−236)
CASE 318−09
ISSUE AJ
C
H
KJ
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01, −02, AND −06 OBSOLETE, NEW
STANDARD 318−09.
INCHES
DIM MIN
MAX
A 0.1102 0.1197
B 0.0472 0.0551
C 0.0385 0.0498
D 0.0140 0.0200
G 0.0670 0.0826
H 0.0040 0.0098
J 0.0034 0.0070
K 0.0180 0.0236
L 0.0350 0.0401
S 0.0830 0.0984
V 0.0177 0.0236
MILLIMETERS
MIN MAX
2.80
3.04
1.20
1.40
0.99
1.26
0.36
0.50
1.70
2.10
0.10
0.25
0.085 0.177
0.45
0.60
0.89
1.02
2.10
2.50
0.45
0.60
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
0.9
0.035
2.0
0.079
0.8
0.031
ǒ ǓSCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet NTR0202PLT3.PDF ] |
Número de pieza | Descripción | Fabricantes |
NTR0202PLT1 | Power MOSFET &20 V / &400 mA / P&Channel SOT&23 Package | ON Semiconductor |
NTR0202PLT1G | Power MOSFET &20 V / &400 mA / P&Channel SOT&23 Package | ON Semiconductor |
NTR0202PLT3 | Power MOSFET &20 V / &400 mA / P&Channel SOT&23 Package | ON Semiconductor |
NTR0202PLT3G | Power MOSFET &20 V / &400 mA / P&Channel SOT&23 Package | ON Semiconductor |
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