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NTR1P02LT1 PDF даташит

Спецификация NTR1P02LT1 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NTR1P02LT1
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTR1P02LT1 Даташит, Описание, Даташиты
NTR1P02LT1
Power MOSFET
−20 V, −1.3 A, P−Channel
SOT−23 Package
These miniature surface mount MOSFETs low RDS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry. Typical
applications are dc−dc converters and power management in portable
and battery−powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
Features
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature SOT−23 Surface Mount Package Saves Board Space
Pb−Free Package is Available
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current
− Continuous @ TA = 25°C
− Pulsed Drain Current (tp 10 ms)
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature Range
VDSS −20 V
VGS ±12 V
ID
IDM
PD
TJ, Tstg
−1.3 A
−4.0 A
400
− 55 to
150
mW
°C
Thermal Resistance − Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes, (1/8from case for 10 s)
RqJA
TL
300 °C/W
260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
http://onsemi.com
V(BR)DSS
−20 V
RDS(on) MAX
220 mW
P−Channel
D
ID MAX
−1.3 A
G
S
3
1
2
SOT−23
CASE 318
STYLE 21
MARKING DIAGRAM/
PIN ASSIGNMENT
3
Drain
PO2W
1
Gate
2
Source
PO2 = Specific Device Code
W = Work Week
ORDERING INFORMATION
Device
Package
NTR1P02LT1 SOT−23
NTR1P02LT1G SOT−23
(Pb−Free)
Shipping
3000 Tape & Reel
3000 Tape & Reel
NTR1P02LT3 SOT−23 10,000 Tape & Reel
NTR1P02LT3G SOT−23 10,000 Tape & Reel
(Pb−Free)
© Semiconductor Components Industries, LLC, 2004
July, 2004 − Rev. 5
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1 Publication Order Number:
NTR1P02LT1/D









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NTR1P02LT1 Даташит, Описание, Даташиты
NTR1P02LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 V, ID = −10 mA)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = −16 V, VGS = 0 V)
(VDS = −16 V, VGS = 0 V, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 12 V, VDS = 0 V)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = −250 mA)
IDSS
IGSS
VGS(th)
Static Drain−to−Source On−Resistance
(VGS = −4.5 V, ID = −0.75 A)
(VGS = −2.5 V, ID = −0.5 A)
rDS(on)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
(VDS = −5.0 V)
(VDS = −5.0 V)
(VDG = −5.0 V)
Rise Time
Turn−Off Delay Time
(VDD = −5.0 V, ID = −1.0 A,
RL = 5.0 W, RG = 6.0 W)
Fall Time
Total Gate Charge
(VDS = −16 V, ID = −1.5 A,
VGS = −4.0 V)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Current
IS
Pulsed Current
ISM
Forward Voltage (Note 2) (VGS = 0 V, IS = −0.6 A)
VSD
Reverse Recovery Time
(IS = −1.0 A, VGS = 0 V,
dIS/dt = 100 A/ms)
trr
ta
tb
Reverse Recovery Stored Charge
QRR
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
2. Switching characteristics are independent of operating junction temperature.
Min
−20
−0.7
Typ
−1.0
0.135
0.190
225
130
55
7.0
15
18
20
5500
Max Unit
−1.0
−10
±100
V
mA
nA
−1.25
0.22
0.35
V
W
pF
ns
pC
16
11
5.5
0.0085
−0.6
−0.75
−1.0
A
V
ns
mC
http://onsemi.com
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NTR1P02LT1 Даташит, Описание, Даташиты
NTR1P02LT1
2.5
VGS = −3 V
2 −2.8 V
−2.6 V
1.5 −2.4 V
−2.2 V
1
−2 V
TJ = 25°C
−1.8 V
−1.6 V
0.5
−1.2 V
−1.4 V
0
012 34
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
5
1.4
VDS −10 V
1.2
1
0.8
0.6 TJ = 25°C
0.4 TJ = 100°C
0.2
TJ = −55°C
0
1 1.2 1.4 1.6 1.8 2 2.2 2.4
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.04
0.03
ID = −10 A
TJ = 25°C
0.02
0.01
0.3
0.25
TJ = 25°C
VGS = −2.5 V
0.2
0.15
0.1
0.05
TJ = 100°C
TJ = 25°C
TJ = −55°C
0
0 2 4 6 8 10
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
−ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
0.3
ID = −0.5 A
VGS = −2.5 V
0.2
0.1
1000
VGS = 0 V
100
10
1
0.1
TJ = 125°C
TJ = 100°C
TJ = 25°C
0 0.01
−50 −25 0 25 50 75 100 125 150
4
8 12 16
TJ, JUNCTION TEMPERATURE (°C)
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
http://onsemi.com
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