NTR4101PT1 PDF даташит
Спецификация NTR4101PT1 изготовлена «ON Semiconductor» и имеет функцию, называемую «Trench Power MOSFET &20 V / Single P&Channel / SOT&23». |
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Детали детали
Номер произв | NTR4101PT1 |
Описание | Trench Power MOSFET &20 V / Single P&Channel / SOT&23 |
Производители | ON Semiconductor |
логотип |
6 Pages
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NTR4101P
Trench Power MOSFET
−20 V, Single P−Channel, SOT−23
Features
• Leading −20 V Trench for Low RDS(on)
• −1.8 V Rated for Low Voltage Gate Drive
• SOT−23 Surface Mount for Small Footprint
• Pb−Free Package is Available
Applications
• Load/Power Management for Portables
• Load/Power Management for Computing
• Charging Circuits and Battery Protection
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
Power Dissipation
(Note 1)
t ≤ 10 s
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
PD
−20
±8.0
−2.4
−1.7
−3.2
0.73
V
V
A
W
t ≤ 10 s
1.25
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
ID
PD
−1.8 A
−1.3
0.42 W
Pulsed Drain Current
ESD Capability (Note 3)
tp = 10 ms
C = 100 pF,
RS = 1500 W
IDM
ESD
−7.5
225
A
V
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering
Purposes (1/8” from case for 10 s)
TJ,
TSTG
IS
TL
−55 to
150
−2.4
260
°C
A
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Ambient − Steady State (Note 1)
RqJA
170 °C/W
Junction−to−Ambient − t < 10 s (Note 1)
RqJA
100
Junction−to−Ambient − Steady State (Note 2)
RqJA
300
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces)
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. ESD Rating Information: HBM Class 0
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V(BR)DSS
−20 V
RDS(ON) TYP
70 mW @ −4.5 V
90 mW @ −2.5 V
112 mW @ −1.8 V
ID MAX
−3.2 A
P−Channel MOSFET
S
G
D
MARKING DIAGRAM &
PIN ASSIGNMENT
3
3 Drain
1
2
SOT−23
CASE 318
STYLE 21
TR4
W
TR4
W
1
Gate
2
Source
= Device Code
= Work Week
ORDERING INFORMATION
Device
Package
Shipping†
NTR4101PT1
NTR4101PT1G
SOT−23
SOT−23
Pb−Free
3000/Tape & Reel
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
October, 2004 − Rev. 3
1
Publication Order Number:
NTR4101P/D
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NTR4101P
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 4)
(VGS = 0 V, ID = −250 mA)
Zero Gate Voltage Drain Current (Note 4)
(VGS = 0 V, VDS = −16 V)
Gate−to−Source Leakage Current
(VGS = ±8.0 V, VDS = 0 V)
ON CHARACTERISTICS
Gate Threshold Voltage (Note 4)
(VGS = VDS, ID = −250 mA)
Drain−to−Source On−Resistance
(VGS = −4.5 V, ID = −1.6 A)
(VGS = −2.5 V, ID = −1.3 A)
(VGS = −1.8 V, ID = −0.9 A)
Forward Transconductance (VDS = −5.0 V, ID = −2.3 A)
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VGS = 0 V, f = 1 MHz, VDS = −10 V)
Total Gate Charge
Gate−to−Source Gate Charge
Gate−to−Drain “Miller” Charge
Gate Resistance
(VGS = −4.5 V, VDS = −10 V, ID = −1.6 A)
(VDS = −10 V, ID = −1.6 A)
(VDS = −10 V, ID = −1.6 A)
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VGS = −4.5 V, VDS = −10 V,
ID = −1.6 A, RG = 6.0 W)
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
(VGS = 0 V, IS = −2.4 A)
Reverse Recovery Time
Charge Time
Discharge Time
(VGS = 0 V,
dISD/dt = 100 A/ms, IS = −1.6 A)
Reverse Recovery Charge
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
QG(tot)
QGS
QGD
RG
td(on)
tr
td(off)
tf
VSD
trr
ta
tb
Qrr
Min
−20
−0.40
Typ
−0.720
70
90
112
75
675
100
75
7.5
1.2
2.2
6.5
7.5
12.6
30.2
21.0
−0.82
12.8
9.9
3.0
1008
Max
−1.0
±100
−1.5
85
120
210
8.5
−1.2
15
Unit
V
mA
nA
V
mW
S
pF
nC
nC
nC
W
ns
V
ns
ns
ns
nC
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2
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NTR4101P
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
10
VGS = −10 V − −2.4 V
TJ = 25°C
8 −2.2 V
6 −2.0 V
4 −1.8 V
.
2 −1.6 V
0
01 2345678
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
10
TJ = −55°C
9 25°C
8 125°C
7
6
5
4
3
2
1 VDS ≥ 20 V
0
0 1 2 3 4 56
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.1
0.09 VGS = −5.0 V
T = 125°C
0.08
0.07 T = 25°C
0.06
T = −55°C
0.05
0.04
0.03
0.02
0.01
0
1
357
−ID, DRAIN CURRENT (AMPS)
9
Figure 3. On−Resistance vs. Drain Current and
Temperature
0.15
0.14 TJ = 25°C
0.13
0.12
0.11
0.10
VGS = −2.5 V
0.09
0.08
0.07
VGS = −4.5 V
0.06
0.05
0.04
0.03
0.02
0.01
0
12 3456 78
−ID, DRAIN CURRENT (AMPS)
9 10
Figure 4. On−Resistance vs. Drain Current and
Temperature
1.4 ID = −1.6 A
1.2
1.0
0.8
100000
VGS = 0 V
10000
1000
100
TJ = 150°C
TJ = 125°C
0.6 10
0.4
−50 −25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
1.0
0 2 4 6 8 10 12 14 16
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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Номер в каталоге | Описание | Производители |
NTR4101PT1 | Trench Power MOSFET &20 V / Single P&Channel / SOT&23 | ON Semiconductor |
NTR4101PT1G | Trench Power MOSFET &20 V / Single P&Channel / SOT&23 | ON Semiconductor |
NTR4101PT1G | Trench Power MOSFET | ON Semiconductor |
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