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PDF NTR4101PT1G Data sheet ( Hoja de datos )
| Número de pieza | NTR4101PT1G | |
| Descripción | Trench Power MOSFET &20 V / Single P&Channel / SOT&23 | |
| Fabricantes | ON Semiconductor | |
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NTR4101P
Trench Power MOSFET
−20 V, Single P−Channel, SOT−23
Features
• Leading −20 V Trench for Low RDS(on)
• −1.8 V Rated for Low Voltage Gate Drive
• SOT−23 Surface Mount for Small Footprint
• Pb−Free Package is Available
Applications
• Load/Power Management for Portables
• Load/Power Management for Computing
• Charging Circuits and Battery Protection
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
Power Dissipation
(Note 1)
t ≤ 10 s
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
PD
−20
±8.0
−2.4
−1.7
−3.2
0.73
V
V
A
W
t ≤ 10 s
1.25
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
ID
PD
−1.8 A
−1.3
0.42 W
Pulsed Drain Current
ESD Capability (Note 3)
tp = 10 ms
C = 100 pF,
RS = 1500 W
IDM
ESD
−7.5
225
A
V
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering
Purposes (1/8” from case for 10 s)
TJ,
TSTG
IS
TL
−55 to
150
−2.4
260
°C
A
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Ambient − Steady State (Note 1)
RqJA
170 °C/W
Junction−to−Ambient − t < 10 s (Note 1)
RqJA
100
Junction−to−Ambient − Steady State (Note 2)
RqJA
300
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces)
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. ESD Rating Information: HBM Class 0
http://onsemi.com
V(BR)DSS
−20 V
RDS(ON) TYP
70 mW @ −4.5 V
90 mW @ −2.5 V
112 mW @ −1.8 V
ID MAX
−3.2 A
P−Channel MOSFET
S
G
D
MARKING DIAGRAM &
PIN ASSIGNMENT
3
3 Drain
1
2
SOT−23
CASE 318
STYLE 21
TR4
W
TR4
W
1
Gate
2
Source
= Device Code
= Work Week
ORDERING INFORMATION
Device
Package
Shipping†
NTR4101PT1
NTR4101PT1G
SOT−23
SOT−23
Pb−Free
3000/Tape & Reel
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
October, 2004 − Rev. 3
1
Publication Order Number:
NTR4101P/D
1 page  
NTR4101P
PACKAGE DIMENSIONS
A
L
3
BS
12
VG
C
DH
SOT−23 (TO−236)
CASE 318−08
ISSUE AK
KJ
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−03 AND −07 OBSOLETE, NEW
STANDARD 318−08.
INCHES
DIM MIN
MAX
A 0.1102 0.1197
B 0.0472 0.0551
C 0.0350 0.0440
D 0.0150 0.0200
G 0.0701 0.0807
H 0.0005 0.0040
J 0.0034 0.0070
K 0.0140 0.0285
L 0.0350 0.0401
S 0.0830 0.1039
V 0.0177 0.0236
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
MILLIMETERS
MIN MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013 0.100
0.085 0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
0.9
0.035
2.0
0.079
0.8
0.031
ǒ ǓSCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NTR4101PT1G.PDF ] | |
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