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NTS4001NT1G PDF даташит

Спецификация NTS4001NT1G изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Small Signal MOSFET».

Детали детали

Номер произв NTS4001NT1G
Описание Small Signal MOSFET
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTS4001NT1G Даташит, Описание, Даташиты
NTS4001N
Small Signal MOSFET
30 V, 270 mA, Single N−Channel, SC−70
Features
Low Gate Charge for Fast Switching
Small Footprint − 30% Smaller than TSOP−6
ESD Protected Gate
Pb−Free Package for Green Manufacturing (G Suffix)
Applications
Low Side Load Switch
Li−Ion Battery Supplied Devices − Cell Phones, PDAs, DSC
Buck Converters
Level Shifts
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Units
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady TA = 25 °C
State
TA = 85 °C
Steady TA = 25 °C
State
VDSS
VGS
ID
PD
30 V
±20 V
270 mA
200
330 mW
Pulsed Drain Current
t =10 µs
Operating Junction and Storage Temperature
IDM
TJ, TSTG
200
−55 to
150
mA
°C
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IS 270 mA
TL 260 °C
1. Surface mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces).
http://onsemi.com
V(BR)DSS
30 V
RDS(on) TYP
1.0 W @ 4.0 V
1.5 W @ 2.5 V
ID Max
270 mA
SC−70
SOT−323 (3 LEADS)
Gate 1
3 Drain
Source 2
Top View
MARKING DIAGRAM
3
1
2
SC−70 / SOT−323
CASE 419
STYLE 8
TDW
TD = Device Code
W = Work Week
PIN ASSIGNMENT
Gate
Source
1
3
2
Top View
Drain
ORDERING INFORMATION
Device
Package
Shipping
NTS4001NT1
SC−70 3000 Units/Reel
NTS4001NT1G
SC−70
3000 Units/Reel
(Pb−Free)
© Semiconductor Components Industries, LLC, 2003
September, 2003 − Rev. 1
1
Publication Order Number:
NTS4001N/D









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NTS4001NT1G Даташит, Описание, Даташиты
NTS4001N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 100 µA
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
IGSS
VGS = 0 V, VDS = 30 V
VDS = 0 V, VGS = ±10 V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Gate Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 100 µA
Drain−to−Source On Resistance
Forward Transconductance
RDS(on)
gFS
VGS = 4.0 V, ID = 10 mA
VGS = 2.5 V, ID = 10 mA
VDS = 3.0 V, ID = 10 mA
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
SWITCHING CHARACTERISTICS (Note 3)
VGS = 0 V, f = 1.0 MHz,
VDS = 5.0 V
VGS = 5.0 V, VDS = 24 V,
ID = 0.1 A
Turn−On Delay Time
Rise Time
td(ON)
tr
VGS = 4.5 V, VDD = 5.0 V,
ID = 10 mA, RG = 50
Turn−Off Delay Time
Fall Time
td(OFF)
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = 10 mA
TJ = 125°C
Reverse Recovery Time
tRR VGS = 0 V, dIS/dt = 8.0 A/µs,
IS = 10 mA
2. Pulse Test: pulse width 300 µs, duty cycle 2%.
3. Switching characteristics are independent of operating junction temperatures.
Min
30
0.8
Typ
60
1.2
−3.4
1.0
1.5
80
20
19
7.25
0.9
0.2
0.3
0.2
17
23
94
82
0.65
0.43
5.0
Max Unit
V
mV/ °C
1.0 µA
±1.0 µA
1.5 V
mV/ °C
1.5
2.0
mS
33 pF
32
12
1.3 nC
ns
0.7 V
ns
http://onsemi.com
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NTS4001NT1G Даташит, Описание, Даташиты
NTS4001N
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
0.2
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0
VGS = 10 V to 3 V
VGS = 2.75 V
2.5 V
TJ = 25°C
2.25 V
2V
1.75 V
1.5 V
0.4 0.8 1.2 1.6
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
2
Figure 1. On−Region Characteristics
0.1
0.08
VDS = 5 V
0.06
0.04
0.02
0
1
TJ = 125°C
25°C
TJ = −55°C
1.2 1.4 1.6 1.8 2 2.2
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
1.25
VGS = 10 V
1.0
0.75
0.5
TJ = 125°C
TJ = 25°C
TJ = −55°C
1.25
TJ = 25°C
1.0
0.75
0.5
VGS = 4.5 V
VGS = 10 V
0.25
0.005
0.055
0.105
0.155
ID, DRAIN CURRENT (AMPS)
0.205
Figure 3. On−Resistance vs. Drain Current and
Temperature
0.25
0.005
0.055
0.105
0.155
ID, DRAIN CURRENT (AMPS)
0.205
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2
1.8
ID = 0.01 A
VGS = 10 V
1.6
10000
VGS = 0 V
1.4 1000
1.2
1
0.8 TJ = 150°C
100
0.6
0.4
0.2
0
−50
−25
0
25 50 75 100 125 150
10
0
TJ = 125°C
5 10 15 20 25 30
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
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Номер в каталогеОписаниеПроизводители
NTS4001NT1Small Signal MOSFETON Semiconductor
ON Semiconductor
NTS4001NT1GSmall Signal MOSFETON Semiconductor
ON Semiconductor
NTS4001NT1GSmall Signal MOSFETON Semiconductor
ON Semiconductor

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