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PDF NUD3124 Data sheet ( Hoja de datos )

Número de pieza NUD3124
Descripción Automotive Inductive Load Driver
Fabricantes ON Semiconductor 
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NUD3124
Automotive Inductive Load
Driver
This MicroIntegrationt part provides a single component solution
to switch inductive loads such as relays, solenoids, and small DC
motors without the need of a free−wheeling diode. It accepts logic
level inputs, thus allowing it to be driven by a large variety of devices
including logic gates, inverters, and microcontrollers.
Features
Provides Robust Interface between D.C. Relay Coils and Sensitive
Logic
Capable of Driving Relay Coils Rated up to 150 mA at 12 Volts
Replaces 3 or 4 Discrete Components for Lower Cost
Internal Zener Eliminates Need for Free−Wheeling Diode
Meets Load Dump and other Automotive Specs
Pb−Free Package is Available
Typical Applications
Automotive and Industrial Environment
Drives Window, Latch, Door, and Antenna Relays
Benefits
Reduced PCB Space
Standardized Driver for Wide Range of Relays
Simplifies Circuit Design and PCB Layout
Compliance with Automotive Specifications
http://onsemi.com
3
1
2
SOT−23
CASE 318
STYLE 21
MARKING DIAGRAMS
JW6 D
JW6 = Specific Device Code
D = Date Code
6
1
SC−74
CASE 318F
STYLE 7
JW6 D
JW6 = Specific Device Code
D = Date Code
Drain (3)
INTERNAL CIRCUIT DIAGRAMS
Drain (6)
Drain (3)
Gate (1)
10 k
100 K
Source (2)
CASE 318
Gate (2)
© Semiconductor Components Industries, LLC, 2004
June, 2004 − Rev. 8
10 k
100 K
10 k
100 K
Gate (5)
Source (1)
Source (4)
CASE 318F
ORDERING INFORMATION
Device
Package
Shipping
NUD3124LT1
SOT−23 3000/Tape & Reel
NUD3124LT1G
NUD3124DMT1
SOT−23
(Pb−Free)
SC−74
3000/Tape & Reel
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1 Publication Order Number:
NUD3124/D

1 page




NUD3124 pdf
NUD3124
140
120
100
80
60
40
80 110 140 170 200 230 260 290 320 350
RELAY’S COIL (W)
Figure 4. Load Dump Capability versus
Relay’s Coil dc Resistance
14
12
10
VDS = 28 V
8
6
4
2
0
−50 −25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Drain−to−Source Leakage versus
Junction Temperature
80
70
60
VGS = 5 V
50
40
VGS = 3 V
30
20
−50 −25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Gate−to−Source Leakage versus
Junction Temperature
34.8
34.6
34.4
34.2
34.0
ID = 10 mA
33.8
33.6
33.4
−50 −25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage versus Junction
Temperature
1 VGS = 5 V
0.01
1E−04
VGS = 3 V VGS = 2.5 V
VGS = 2 V
1E−06
1E−08
VGS = 1 V
1
VDS = 0.8 V
0.1
0.01 125 °C
0.001
1E−04
1E−05
1E−06
85 °C
25 °C
−40 °C
1E−10
0.0
0.1 0.2 0.3 0.4 0.5 0.6 0.7
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 8. Output Characteristics
1E−07
0.8 0.5
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 9. Transfer Function
5.0
http://onsemi.com
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