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PDF NUP4301MR6T1 Data sheet ( Hoja de datos )

Número de pieza NUP4301MR6T1
Descripción Low Capacitance Diode Array for ESD Protection in Four Data Lines
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NUP4301MR6T1
Low Capacitance Diode
Array for ESD Protection in
Four Data Lines
NUP4301MR6T1 is a MicroIntegrationdevice designed to
provide protection for sensitive components from possible harmful
electrical transients; for example, ESD (electrostatic discharge).
Features
Low Capacitance (1.5 pf Maximum Between I/O Lines)
Single Package Integration Design
Provides ESD Protection for JEDEC Standards JESD22
Machine Model = Class C
Human Body Model = Class 3B
Protection for IEC61000-4-2 (Level 4)
8.0 kV (Contact)
15 kV (Air)
Ensures Data Line Speed and Integrity
Fewer Components and Less Board Space
Direct the Transient to Either Positive Side or to the Ground
Applications
USB 1.1 and 2.0 Data Line Protection
T1/E1 Secondary IC Protection
T3/E3 Secondary IC Protection
HDSL, IDSL Secondary IC Protection
Video Line Protection
Microcontroller Input Protection
Base Stations
I2C Bus Protection
MAXIMUM RATINGS (Each Diode) (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Reverse Voltage
Forward Current
Peak Forward Surge Current
Repetitive Peak Reverse Voltage
Average Rectified Forward
Current (Note 1)
(averaged over any 20 ms period)
VR 70 Vdc
IF 200 mAdc
IFM(surge) 500 mAdc
VRRM
70
V
IF(AV)
715 mA
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Current
t = 1.0 ms
t = 1.0 ms
t = 1.0 S
1. FR-5 = 1.0  0.75  0.062 in.
IFRM
IFSM
450 mA
A
2.0
1.0
0.5
http://onsemi.com
PIN CONFIGURATION
AND SCHEMATIC
I/O 1
VN 2
1/O 3
6 I/O
5 VP
4 I/O
54
6
123
TSOP-6
CASE 318F
PLASTIC
MARKING DIAGRAM
64d
64 = Specific Device Code
d = Date Code
ORDERING INFORMATION
Device
Package
Shipping
NUP4301MR6T1 TSOP-6 3000/Tape & Reel
© Semiconductor Components Industries, LLC, 2003
February, 2003 - Rev. 2
1
Publication Order Number:
NUP4301MR6T1/D

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