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NVM3060 PDF даташит

Спецификация NVM3060 изготовлена ​​​​«ETC» и имеет функцию, называемую «4096-Bit EEPROM».

Детали детали

Номер произв NVM3060
Описание 4096-Bit EEPROM
Производители ETC
логотип ETC логотип 

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NVM3060 Даташит, Описание, Даташиты
NVM 3060
4096-Bit EEPROM
Edition Feb. 14, 1990
6251-309-2/E
ITT Semiconductors









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NVM3060 Даташит, Описание, Даташиты
NVM 3060
Contents
Page
Section
3 1.
4 2.
4 2.1.
4 2.2.
4 2.3.
5 2.4.
5 2.5.
5 2.5.1.
5 2.5.2.
7 2.5.3.
8 3.
8 3.1.
8 3.2.
8 3.3.
8 3.4.
9 4.
9 4.1.
9 4.2.
9 4.3.
10 5.
Title
Introduction
Specifications
Outline Dimensions
Pin Connections
Pin Descriptions
Pin Circuits
Electrical Characteristics
Absolute Maximum Ratings
Recommended Operating Conditions
Characteristics
Functional Description
Memory Operation
Testing
Protected Matrix
Shipment
Test Functions
Block Programming
Read Reference Shifting
Charge Pump Disable
Description of the IM Bus
2









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NVM3060 Даташит, Описание, Даташиты
NVM 3060
4096-Bit EEPROM
1. Introduction
Electrically erasable programmable read-only memory
(EEPROM) in N-channel floating-gate technology with
a capacity of 512 words, 8 bits each.
The NVM 3060 is intended for use as a reprogrammable
non-volatile memory in conjunction with the CCU
2030/2050/2070/3000 series Central Control Units or
the SAA 12xx and TVPO 2066 Remote Control and Tun-
ing ICs. It serves for storing the tuning information as
well as several analog settings, further alignment infor-
mation given in the factory when producing the TV set.
The stored information remains stored even with the
supply voltages switched off. Reading and programming
operations are executed via the IM bus (see section 5.).
Input and output signals are TTL level. An address op-
tion input provides the possibility to operate two memo-
ries in parallel, to obtain a total storage capacity of 8192
bits.
The device contains an on-chip charge pump for high
programming voltage generation and an on-chip clock
oscillator.
Option
3
5
Clock
6
Ident
7
Data
IM Bus
Interface
NVM 3060
Clock
Data
Output
Buffer
and
Input
Register
4
Reset
Sequence
Control
+5 V
1
GND
8
VSUP
Fig. 1–1: Block diagram of the NVM 3060 EEPROM
Charge
Pump
EEPROM
Matrix
512 x 8
2
S
Decoder and
Register for the
Memory Address
3










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Номер в каталогеОписаниеПроизводители
NVM30604096-Bit EEPROMETC
ETC

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

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