NZF220TT1 PDF даташит
Спецификация NZF220TT1 изготовлена «ON Semiconductor» и имеет функцию, называемую «EMI Filter with ESD Protection». |
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Детали детали
Номер произв | NZF220TT1 |
Описание | EMI Filter with ESD Protection |
Производители | ON Semiconductor |
логотип |
4 Pages
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NZF220TT1
EMI Filter with ESD
Protection
Features:
• EMI/RFI Bi–directional “Pi” Low–Pass Filters
• ESD Protection Meets IEC61000–4–2
• Diode Capacitance: 7 – 10 pF
• Zener/Resistor Line Capacitance: 22 ±20% pF
• Low Zener Diode Leakage: 1 mA Maximum
• Zener Breakdown Voltage; 6 – 8 Volts
Benefits:
• Designed to suppress EMI/RFI Noise in Systems Subjected to
Electromagnetic Interference
• Small Package Size Minimizes Parasitic Inductance, Thus a More
“Ideal” Low Pass Filtering Response
Typical Applications:
• Cellular Phones
• Communication Systems
• Computers
• Portable Products with Input/Output Conductors
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1)
8 × 20 ms Pulse
Maximum Junction Temperature
1. All diodes under power
Symbol
PPK
Value
14
TJ 150
Unit
Watts
°C
http://onsemi.com
SC–75
CASE 463
STYLE 4
MARKING DIAGRAM
3
X6 D
12
X6 = Specific Device Code
D = Date Code
CIRCUIT DESCRIPTION
12
3
ORDERING INFORMATION
Device
Package
Shipping
NZF220TT1
SC–75 3000/Tape & Reel
© Semiconductor Components Industries, LLC, 2002
May, 2002 – Rev. 2
1
Publication Order Number:
NZF220TT1/D
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NZF220TT1
ELECTRICAL CHARACTERISTICS
Symbol
Characteristic
VZ
Ir
VF
Capacitance
Zener Breakdown Voltage, @ IZT = 1 mA
Zener Leakage Current, @ VR = 3 V
Zener Forward Voltage, @ IF = 50 mA
Zener Internal Capacitance, @ 0 V Bias
Capacitance Zener/Resistor Array Line Capacitance
Resistor
Resistance
FC (Note 2) Cutoff Frequency
2. 50 W Source and 50 W Lead Termination per Figure 2
Min Typ Max Unit
6.0 – 8.0 V
N/A – 1.0 mA
N/A – 1.25 V
7.0 – 10 pF
17.6 – 26.4 pF
90 – 110 W
– 220 – MHz
Applications Information
Suppressing Noise at the Source
• Filter all I/O signals leaving the noisy environment
• Locate I/O driver circuits close to the connector
• Use the longest rise/fall times possible for all digital signals
Reducing Noise at the Receiver
• Filter all I/O signals entering the unit
• Locate the I/O filters as close as possible to the connector
Minimizing Noise Coupling
• Use multilayer PCBs to minimize power and ground inductance
• Keep clock circuits away from the I/O connector
• Ground planes should be used whenever possible
• Minimize the loop area for all high speed signals
• Provide for adequate power decoupling
ESD Protection
• Locate the suppression devices as close to the I/O connector as possible
• Minimize the PCB trace length to the suppression device
• Minimize the PCB trace length for the ground return for the suppression device
http://onsemi.com
2
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NZF220TT1
Frequency Response Specification
TG OUTPUT
RF INPUT
TEST BOARD
TRACKING
GENERATOR
50 W
NZF220T
SPECTRUM
ANALYZER
50 W
VG Vin Vout
NZF220T
Figure 1. Measurement Conditions
Test Conditions:
Source Impedance = 50 W
Load Impedance = 50 W
Input Power = 0 dB
–6.3
Y
Y OUTPUT
3 dB = 220 MHz
–50
1.0
10 100
f, FREQUENCY (MHz)
1000 3000
Figure 2. Typical EMI Filter Response
(50 W Source and 50 W Lead Termination)
http://onsemi.com
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Номер в каталоге | Описание | Производители |
NZF220TT1 | EMI Filter with ESD Protection | ON Semiconductor |
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