DataSheet26.com

NZF220TT1 PDF даташит

Спецификация NZF220TT1 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «EMI Filter with ESD Protection».

Детали детали

Номер произв NZF220TT1
Описание EMI Filter with ESD Protection
Производители ON Semiconductor
логотип ON Semiconductor логотип 

4 Pages
scroll

No Preview Available !

NZF220TT1 Даташит, Описание, Даташиты
NZF220TT1
EMI Filter with ESD
Protection
Features:
EMI/RFI Bi–directional “Pi” Low–Pass Filters
ESD Protection Meets IEC61000–4–2
Diode Capacitance: 7 – 10 pF
Zener/Resistor Line Capacitance: 22 ±20% pF
Low Zener Diode Leakage: 1 mA Maximum
Zener Breakdown Voltage; 6 – 8 Volts
Benefits:
Designed to suppress EMI/RFI Noise in Systems Subjected to
Electromagnetic Interference
Small Package Size Minimizes Parasitic Inductance, Thus a More
“Ideal” Low Pass Filtering Response
Typical Applications:
Cellular Phones
Communication Systems
Computers
Portable Products with Input/Output Conductors
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1)
8 × 20 ms Pulse
Maximum Junction Temperature
1. All diodes under power
Symbol
PPK
Value
14
TJ 150
Unit
Watts
°C
http://onsemi.com
SC–75
CASE 463
STYLE 4
MARKING DIAGRAM
3
X6 D
12
X6 = Specific Device Code
D = Date Code
CIRCUIT DESCRIPTION
12
3
ORDERING INFORMATION
Device
Package
Shipping
NZF220TT1
SC–75 3000/Tape & Reel
© Semiconductor Components Industries, LLC, 2002
May, 2002 – Rev. 2
1
Publication Order Number:
NZF220TT1/D









No Preview Available !

NZF220TT1 Даташит, Описание, Даташиты
NZF220TT1
ELECTRICAL CHARACTERISTICS
Symbol
Characteristic
VZ
Ir
VF
Capacitance
Zener Breakdown Voltage, @ IZT = 1 mA
Zener Leakage Current, @ VR = 3 V
Zener Forward Voltage, @ IF = 50 mA
Zener Internal Capacitance, @ 0 V Bias
Capacitance Zener/Resistor Array Line Capacitance
Resistor
Resistance
FC (Note 2) Cutoff Frequency
2. 50 W Source and 50 W Lead Termination per Figure 2
Min Typ Max Unit
6.0 – 8.0 V
N/A – 1.0 mA
N/A – 1.25 V
7.0 – 10 pF
17.6 – 26.4 pF
90 – 110 W
– 220 – MHz
Applications Information
Suppressing Noise at the Source
Filter all I/O signals leaving the noisy environment
Locate I/O driver circuits close to the connector
Use the longest rise/fall times possible for all digital signals
Reducing Noise at the Receiver
Filter all I/O signals entering the unit
Locate the I/O filters as close as possible to the connector
Minimizing Noise Coupling
Use multilayer PCBs to minimize power and ground inductance
Keep clock circuits away from the I/O connector
Ground planes should be used whenever possible
Minimize the loop area for all high speed signals
Provide for adequate power decoupling
ESD Protection
Locate the suppression devices as close to the I/O connector as possible
Minimize the PCB trace length to the suppression device
Minimize the PCB trace length for the ground return for the suppression device
http://onsemi.com
2









No Preview Available !

NZF220TT1 Даташит, Описание, Даташиты
NZF220TT1
Frequency Response Specification
TG OUTPUT
RF INPUT
TEST BOARD
TRACKING
GENERATOR
50 W
NZF220T
SPECTRUM
ANALYZER
50 W
VG Vin Vout
NZF220T
Figure 1. Measurement Conditions
Test Conditions:
Source Impedance = 50 W
Load Impedance = 50 W
Input Power = 0 dB
–6.3
Y
Y OUTPUT
3 dB = 220 MHz
–50
1.0
10 100
f, FREQUENCY (MHz)
1000 3000
Figure 2. Typical EMI Filter Response
(50 W Source and 50 W Lead Termination)
http://onsemi.com
3










Скачать PDF:

[ NZF220TT1.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NZF220TT1EMI Filter with ESD ProtectionON Semiconductor
ON Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск