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NZT7053 PDF даташит

Спецификация NZT7053 изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «NPN Darlington Transistor».

Детали детали

Номер произв NZT7053
Описание NPN Darlington Transistor
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

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NZT7053 Даташит, Описание, Даташиты
Discrete POWER & Signal
Technologies
2N7052
2N7053
NZT7053
C
BE
TO-92
C
BE
TO-226
C
SOT-223
E
C
B
NPN Darlington Transistor
This device is designed for applications requiring extremely high
gain at collector currents to 1.0 A and high breakdown voltage.
Sourced from Process 06.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
100
VCBO
Collector-Base Voltage
100
VEBO
Emitter-Base Voltage
12
IC Collector Current - Continuous
1.5
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
A
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
2N7052
2N7053
PD Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
625
5.0
83.3
1,000
8.0
125
RθJA Thermal Resistance, Junction to Ambient 200
50
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
*NZT7053
1,000
8.0
125
Units
mW
mW/°C
°C/W
°C/W
ã 1997 Fairchild Semiconductor Corporation









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NZT7053 Даташит, Описание, Даташиты
NPN Darlington Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
V(BR)CBO
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICBO Collector-Cutoff Current
ICES Collector-Cutoff Current
IEBO Emitter-Cutoff Current
IC = 1.0 mA, IB = 0
IC = 100 µA, IE = 0
IE = 1.0 mA, IC = 0
VCB = 80 V, IE = 0
VCE = 80 V, IE = 0
VEB = 7.0 V, IC = 0
100
100
12
0.1
0.2
0.1
V
V
V
µA
µA
µA
ON CHARACTERISTICS*
hFE DC Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 100 mA, VCE = 5.0 V
IC = 1.0 A, VCE = 5.0 V
IC = 100 mA, IB = 0.1 mA
IC = 100 mA, VBE = 5.0 V
10,000
1,000
20,000
1.5
2.0
V
V
SMALL SIGNAL CHARACTERISTICS
FT Transition Frequency
Ccb Collector-Base Capacitance
IC = 100 mA, VCE = 5.0 V,
200
MHz
VCB = 10 V,f = 1.0 MHz 2N7052
2N7053
10 pF
8.0
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 1.0%
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
100
80
60 125 °C
40
20
25 °C
- 40°C
0
0.001
0.01 0.1
IC - COLLECTOR CURRENT (A)
1
Collector-Emitter Saturation
Voltage vs Collector Current
2
β = 1000
1.6
1.2
0.8
25 °C
0.4
- 40°C
125 °C
0
10 100 1000
I - COLLECTOR CURRENT (mA)
C
P 06









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NZT7053 Даташит, Описание, Даташиты
Typical Characteristics (continued)
NPN Darlington Transistor
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
2
β = 1000
1.6 - 40°C
25 °C
1.2
125 °C
0.8
0.4
0
10 100 1000
I C - COLLECTOR CURRENT (mA)
Collector-Cutoff Current
vs. Ambient Temperature
100
VCB = 80V
10
1
0.1
0.01
25
50 75 100
TA- AMBIENT TEMPERATURE (º C)
P 06
125
Typical Collector-Emitter Leakage
Current vs Temperature
1000
100
VCE = 80V
V BE = 0
10
1
0.1
0
40 80 120 160
TJ - JUNCTION TEMPERATURE ( ºC)
Base Emitter ON Voltage vs
Collector Current
2
1.6 - 40°C
1.2
0.8
25 °C
125 °C
0.4 VCE= 5V
0
10 100
I C - COLLECTOR CURRENT (mA)
P 06
1000
Junction Capacitance vs
Reverse Bias Voltage
100
10
1
0.1
C ib
1 10
REVERSE BIAS VOLTAGE (V)
C cb
100
Power Dissipation vs
Ambient Temperature
1
0. 75
TO-92
SOT-223
TO-226
0 .5
0. 25
0
0 25 50 75 100 125 150
TEMPERATURE (oC)










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Номер в каталогеОписаниеПроизводители
NZT7053NPN Darlington TransistorFairchild Semiconductor
Fairchild Semiconductor

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