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ON1109 PDF даташит

Спецификация ON1109 изготовлена ​​​​«Panasonic Semiconductor» и имеет функцию, называемую «Photo Interrupter».

Детали детали

Номер произв ON1109
Описание Photo Interrupter
Производители Panasonic Semiconductor
логотип Panasonic Semiconductor логотип 

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ON1109 Даташит, Описание, Даташиты
Transmissive Photosensors (Photo Interrupters)
ON1109
Photo Interrupter
For contactless SW, object detection
Outline
ON1109 is a photocoupler in which a high efficiency GaAs
infrared light emitting diode is used as the light emitting element,
and a high sensitivity phototransistor is used as the light detecting
element. The two elements are arranged so as to face each other,
and objects passing between them are detected.
Features
Highly precise position detection : 0.7 mm
Fast response : tr, tf = 6 µs (typ.)
Small output current variation against change in temperature
Deep and wide gap between emitting and detecting elements
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Input (Light
emitting diode)
Output (Photo
transistor)
Reverse voltage (DC)
Forward current (DC)
Power dissipation
Collector current
Collector to emitter voltage
Emitter to collector voltage
Collector power dissipation
VR
IF
PD*1
IC
VCEO
VECO
PC*2
3
50
75
20
30
5
100
V
mA
mW
mA
V
V
mW
Temperature Operating ambient temperature Topr –25 to +85 ˚C
Storage temperature
Tstg –30 to +100 ˚C
Mark for indicating
LED side ø1.5
2-C2.0±0.3
Unit : mm
28.0±0.35
17.0±0.3
5.0±0.2
A
Device
center
1.0±0.2
A'
(12.0)
2-0.45±0.2
(2.54)
SEC. A-A'
2 22.4±0.2 3
2-ø3.2±0.2
1 42
3
14
Pin connection
(Note) ( ) Dimension is reference
*1 Input power derating ratio is
1.0 mW/˚C at Ta 25˚C.
*2 Output power derating ratio is
1.34 mW/˚C at Ta 25˚C.
Electrical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Input Forward voltage (DC)
VF IF = 50mA
1.2 1.5 V
characteristics Reverse current (DC)
IR VR = 3V
10 µA
Output Collector cutoff current
ICEO VCE = 10V
200 nA
characteristics Collector to emitter capacitance CC VCE = 10V, f = 1MHz
5 pF
Collector current
Transfer
Response time
characteristics
IC VCE = 10V, IF = 20mA
tr , tf* VCC = 10V, IC = 1mA, RL = 100
0.3
6
mA
µs
Collector to emitter saturation voltage VCE(sat) IF = 50mA, IC = 0.1mA
0.3 V
* Switching time measurement circuit
Sig.IN
50
VCC
(Input pulse)
Sig.OUT (Output pulse)
RL
td
tr
90%
10%
tf
td : Delay time
tr : Rise time (Time required for the collector current to increase
from 10% to 90% of its final value)
tf : Fall time (Time required for the collector current to decrease
from 90% to 10% of its initial value)
1









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ON1109 Даташит, Описание, Даташиты
Transmissive Photosensors (Photo Interrupters)
ON1109
IF , IC — Ta
60
IF
50
40
30
IC
20
10
0
– 25 0
20 40 60 80 100
Ambient temperature Ta (˚C )
IF — VF
60
Ta = 25˚C
50
40
30
20
10
0
0 0.4 0.8 1.2 1.6 2.0 2.4
Forward voltage VF (V)
IC — IF
10 2
VCE = 10V
Ta = 25˚C
10
1
10 –1
10 –2
10 –1
1 10
Forward current IF (mA)
10 2
VF — Ta
1.6
IC — VCE
10 2 160
Ta = 25˚C
1.2
IF = 50mA
10
120
IF = 30mA
20mA
10mA
10mA
0.8 1 80
IC — Ta
VCE = 10V
IF = 20mA
0.4 10 –1
40
0
– 40 – 20 0 20 40 60 80 100
Ambient temperature Ta (˚C )
10 –2
10 –1
1
10 10 2
Collector to emitter voltage VCE (V)
0
– 40 – 20 0 20 40 60 80 100
Ambient temperature Ta (˚C )
ICEO — Ta
10
1
10 –1
10 –2
VCE = 24V
10V
10 –3
10 –4
– 40 – 20 0 20 40 60 80 100
Ambient temperature Ta (˚C )
tr — IC
10 3 VCC = 10V
Ta = 25˚C
10 2
RL = 1k
500
10
100
1
10 –1
10 –2
Sig.IN
V1
50
VCC
Sig. V1
OUT
90%
V2
RL
V2
tr
td
10%
tf
10 –1
1
10
Collector current IC (mA)
IC — d
100
VCE = 10V
Ta = 25˚C
IF = 20mA
80
Criterion
0
d
60
40
20
0
0123456
Distance d (mm)
2










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