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ON2170 PDF даташит

Спецификация ON2170 изготовлена ​​​​«Panasonic Semiconductor» и имеет функцию, называемую «Reflective Photosensor».

Детали детали

Номер произв ON2170
Описание Reflective Photosensor
Производители Panasonic Semiconductor
логотип Panasonic Semiconductor логотип 

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ON2170 Даташит, Описание, Даташиты
Reflective Photosensors (Photo Reflectors)
CNB1302
Reflective Photosensor
Overview
CNB1302 is a small, thin reflective photosensor consisting of a
high efficiency GaAs infrared light emitting diode which is integrated
with a high sensitivity Si phototransistor in a single resin package.
Features
Ultraminiature, thin type : 2.7 × 3.4 mm (height : 1.5 mm)
Visible light cutoff resin is used
Fast response : tr, tf = 20µs (typ.)
Easy interface for control circuit
Applications
Control of motor and other rotary units
Detection of position and edge
Detection of paper, film and cloth
Start, end mark detection of magnetic tape
Mark for indicating
anode side
C0.5
13
Chip
center
Unit : mm
4-0.7
4-0.5
±0.1
24
1.8
3.4±0.3
0.5
0.15
1 23
4
Pin connection
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Reverse voltage (DC) VR
3
V
Input (Light
Forward current (DC)
emitting diode)
IF
50 mA
Power dissipation
PD*1 75 mW
Collector current
IC 20 mA
Output (Photo Collector to emitter voltage
transistor) Emitter to collector voltage
Collector power dissipation
VCEO
VECO
PC*2
30
5
50
V
V
mW
Temperature
Operating ambient temperature Topr –25 to +85 ˚C
Storage temperature
Tstg –30 to +100 ˚C
*1 Input power derating ratio is
1.0 mW/˚C at Ta 25˚C.
*2 Output power derating ratio is
0.67 mW/˚C at Ta 25˚C.
Electrical Characteristics (Ta = 25˚C)
Paramwter
Symbol
Conditions
Forward voltage (DC)
Input
characteristics Reverse current (DC)
Capacitance between terminals
VF IF = 50mA
IR VR = 3V
Ct VR = 0V, f = 1MHz
Output characteristics Collector cutoff current
ICEO VCE = 10V
Collector current
IC*1, *2 VCC = 5V, IF = 10mA, RL = 100, d = 1mm
Transfer Leakage current
ID VCC = 5V, IF = 10mA, RL = 100
characteristics Response time
tr*3 , tf*4 VCC = 5V, IC = 0.1mA, RL = 100
Collector to emitter saturation voltage VCE(sat) IF = 20mA, IC = 0.1mA
min typ max Unit
1.3 1.5 V
0.01 10 µA
30 pF
200 nA
90 880 µA
200 nA
20 µs
0.4 V
*1 IC classifications
Class
IC (µA)
Q
90 to 220
R
180 to 440
S
360 to 880
*2 Output current measurement method
Evaporated Al
Glass plate
(t = 1mm)
*3 Time required for the output current to increase from 10% to 90% of its final value IF
*4 Time required for the output current to decrease from 90% to 10% of its initial value
VCC IC RL
1









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ON2170 Даташит, Описание, Даташиты
CNB1302
Reflective Photosensors (Photo Reflectors)
IF , IC — Ta
60
50 IF
40
30
20 IC
10
0
– 25 0
20 40 60 80 100
Ambient temperature Ta (˚C )
IF — VF
60
Ta = 25˚C
50
40
30
20
10
0
0 0.4 0.8 1.2 1.6 2.0 2.4
Forward voltage VF (V)
IC — IF
800
VCE = 5V
Ta = 25˚C
RL = 100
d = 1mm
600
400
200
0
0 8 16 24
Forward current IF (mA)
IC — VCE
600 d = 1mm
Ta = 25˚C
500 IF = 20mA
400
15mA
300
10mA
200
8mA
6mA
100
4mA
2mA
0
02468
Collector to emitter voltage VCE (V)
ICEO — Ta
tr , tf — IC
10 10 3
VCE = 10V
VCC = 5V
Ta = 25˚C
: tr
1 : tf
10 2
RL = 2k
10 –1
1k
10
10 –2
100
10 –3
1
10 –4
– 40 – 20 0 20 40 60 80 100
Ambient temperature Ta (˚C )
10 –1
10 –2
10 –1
Collector current
1
IC (mA)
10
VF — Ta
1.6
IF = 50mA
1.2 10mA
1mA
0.8
0.4
0
– 40 – 20 0 20 40 60 80 100
Ambient temperature Ta (˚C )
IC — Ta
160
VCC = 5V
IF = 10mA
RL = 100
120
80
40
0
– 40 – 20 0 20 40 60 80 100
Ambient temperature Ta (˚C )
IC — d
100
VCC = 5V
Ta = 25˚C
IF = 10mA
80
d
60
40
20
0
0 2 4 6 8 10
Distance d (mm)
2










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