OP599C PDF даташит
Спецификация OP599C изготовлена «ETC» и имеет функцию, называемую «NPN Plastic Silicon Phototransistors». |
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Детали детали
Номер произв | OP599C |
Описание | NPN Plastic Silicon Phototransistors |
Производители | ETC |
логотип |
2 Pages
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Product Bulletin OP599
June 1996
NPN Plastic Silicon Phototransistors
Type OP599 Series
Features
• Variety of sensitivity ranges
• T-1 3/4 package style
Description
The OP599 series phototransistor
consists of an NPN silicon
phototransistor mounted in a dark blue
plastic injection molded shell package.
The narrow receiving angle provides
excellent on-axis coupling. The sensors
are 100% production tested for close
correlation with Optek GaAlAs emitters.
Optek’s packaging process provides
excellent optical and mechanical axis
alignment. The shell also provides
excellent optical lens surface, control of
chip placement, and consistency of the
outside package dimensions.
Absolute Maximum Ratings (TA = 25o C unless otherwise noted)
Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Emitter-Collector Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V
Continuous Collector Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Storage and Operating Temperature Range . . . . . . . . . . . . . . . . . . -40o C to +100o C
Lead Soldering Temperature (1/16 inch [1.6 mm] from case for 5 sec. with
soldering iron). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260o C(1)
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(2)
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.
Max. 20 grams force may be applied to leads when soldering.
(2) Derate linearly 1.33 mW/o C above 25o C.
(3) VCE = 5 V. Light source is an unfiltered GaAlAs emitting diode operating at peak emission
wavelength of 890 nm and Ee(APT) of .25 mW/cm2.
(4) This dimension is held to within ± 0.005" on the flange edge and may vary up to ±0.020" in
the area of the leads.
Typical Performance Curves
Typical Spectral Response
Wavelength - nm
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
3-34
(972) 323-2200
Fax (972)323-2396
No Preview Available ! |
Types OP599
Electrical Characteristics (TA = 25oC unless otherwise noted)
SYMBOL
PARAMETER
On-State Collector Current
IC(ON)
ICEO
V(BR)CEO
V(BR)ECO
VCE(SAT)
Collector Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Saturation Voltage
OP599D
OP599C
OP599B
OP599A
MIN TYP MAX UNITS
TEST CONDITIONS
0.20 mA See Note (3)
0.40
1.20
2.35
1.95
3.85
mA See Note (3)
mA See Note (3)
mA See Note (3)
100 nA VCE = 10.0 V, Ee = 0
30 V IC = 100 µA
5.0 V IE = 100 µA
0.40
V
IC = 100 µA
Ee = 0.25 mW/cm2(3)
Typical Performance Curves
Ee - Irradiance - mW/cm2
Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006
(972)323-2200
Fax (972)323-2396
3-35
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Номер в каталоге | Описание | Производители |
OP599 | NPN Plastic Silicon Phototransistors | ETC |
OP599A | NPN Plastic Silicon Phototransistors | ETC |
OP599A | NPN Plastic Silicon Phototransistors | ETC |
OP599B | NPN Plastic Silicon Phototransistors | ETC |
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