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S8201 PDF даташит

Спецификация S8201 изготовлена ​​​​«Polyfet RF Devices» и имеет функцию, называемую «SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR».

Детали детали

Номер произв S8201
Описание SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Производители Polyfet RF Devices
логотип Polyfet RF Devices логотип 

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S8201 Даташит, Описание, Даташиты
polyfet rf devices
S8201
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
TM
"Polyfet" process features
low feedback and output capacitances
resulting in high F t transistors with high
input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
4.0 Watts Single Ended
Package Style SO8
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
Total
Device
Dissipation
20 Watts
Junction to
Case Thermal
Resistance
o
10.00 C/W
ABSOLUTE MAXIMUM RATINGS ( T = 25 oC )
Maximum
Junction
Temperature
200 oC
Storage
Temperature
oo
-65 C to 150 C
DC Drain
Current
1.2 A
Drain to
Gate
Voltage
70 V
Drain to
Source
Voltage
70 V
Gate to
Source
Voltage
20 V
RF CHARACTERISTICS ( 4.0 WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Power Gain
η Drain Efficiency
10
45
dB Idq = 0.20 A, Vds = 28.0 V, F = 1,000MHz
% Idq = 0.20 A, Vds = 28.0 V, F = 1,000 MHz
VSWR Load Mismatch Tolerance
20:1 Relative Idq = 0.20 A, Vds = 28.0 V, F =1,000MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss
Idss
Drain Breakdown Voltage
Zero Bias Drain Current
65 V Ids = 10.00 mA, Vgs = 0V
0.2 mA
Vds = 28.0 V, Vgs = 0V
Igss Gate Leakage Current
1 uA
Vds = 0V Vgs = 30V
Vgs Gate Bias for Drain Current
1
7V
Ids = 0.02 A, Vgs = Vds
gM Forward Transconductance
0.3 Mho Vds = 10V, Vgs = 5V
Rdson Saturation Resistance
4.00
Ohm
Vgs = 20V, Ids = 0.50 A
Idsat
Saturation Current
1.40 Amp Vgs = 20V, Vds = 10V
Ciss Common Source Input Capacitance
10.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitance
0.6 pF Vds = 28.0 Vgs = 0V, F = 1 MHz
Coss Common Source Output Capacitance
6.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 03/28/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com









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S8201 Даташит, Описание, Даташиты
S8201
POUT VS PIN GRAPH
S8201 POUT VS PIN Freq=1000MHz, VDS=28V, Idq=.2A
6 13.50
5 12.50
Pout
4 11.50
1dB compression = 4 watts
3 10.50
2 9.50
Gain
Efficiency = 45%
1 8.50
0
0
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
0.2 0.4 0.6
PIN IN WATTS
IV CURVE
S2A 1 DIE IV
2
vg=2v
46
Vg=4v
8 10 12
Vg=V6DvSINVOLTSvg=8v
Zin Zout
7.50
0.8 1
14 16 18
0 vg=12v
20
100
10
1
0.1
0
10.00
1.00
0.10
0
CAPACITANCE VS VOLTAGE
S2A 1 DIE CAPACITANCE
Ciss
Coss
Crss
5 10 V D S I N15V O L T S 20
ID & GM VS VGS
S2A 1 DIE ID & GM Vs VG
25
30
Id
gM
2 4 6 8 10 12
Vgs in Volts
PACKAGE DIMENSIONS IN INCHES
14
Tolerance .XX +/-0.01 .XXX +/-.005 inches
POLYFET RF DEVICES
REVISION 03/28/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com










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