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SA5222 PDF даташит

Спецификация SA5222 изготовлена ​​​​«Philips» и имеет функцию, называемую «Low-power FDDI transimpedance amplifier».

Детали детали

Номер произв SA5222
Описание Low-power FDDI transimpedance amplifier
Производители Philips
логотип Philips логотип 

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SA5222 Даташит, Описание, Даташиты
Philips Semiconductors
Low-power FDDI transimpedance amplifier
Product specification
SA5222
DESCRIPTION
The NE/SA5222 is a low-power, wide-band, low noise
transimpedance amplifier with differential outputs, optimized for
signal recovery in FDDI fiber optic receivers. The part is also suited
for many other RF and fiber optic applications as a general purpose
gain block.
FEATURES
Extremely low noise:2.0pAń ǸHz
Single 5V supply
Low supply current: 9mA
Large bandwidth: 165MHz
Differential outputs
Low output offset
Low input/output impedances
High power-supply-rejection ratio: 55dB
Tight transresistance control
High input overload: 115µA
ESD protected
ORDERING INFORMATION
DESCRIPTION
8-Pin Plastic Small Outline (SO) package
PIN DESCRIPTION
D Package
VCC1 1
GND1 2
IN 3
GND1 4
8 VCC2
7 OUT
6 OUT
5 GND2
Figure 1. Pin Configuration
APPLICATIONS
FDDI preamp
Current-to-voltage converters
Wide-band gain block
Medical and scientific instrumentation
Sensor preamplifiers
Single-ended to differential conversion
Low noise RF amplifiers
RF signal processing
SD00360
TEMPERATURE RANGE
-40 to +85°C
ORDER CODE
SA5222D
DWG #
SOT96-1
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RATING
UNITS
VCC1,2
Power supply voltage
6V
TA Ambient temperature range
-40 to +85
°C
TJ Junction temperature range
-55 to +150
°C
TSTG
PD
Storage temperature range
Power dissipation TA = 25oC (still air)1
-65 to +150
0.78
°C
W
IINMAX
Maximum input current
5 mA
NOTE:
1. Maximum power dissipation is determined by the operating ambient temperature and the thermal resistance θJA = 158oC/W. Derate
6.2mW/°C above 25°C.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
VCC1,2
Power supply voltage
TA Ambient temperature range: SA grade
TJ Junction temperature range: SA grade
RATING
4.5 to 5.5
-40 to +85
-40 to +105
UNITS
V
°C
°C
1995 Apr 26
1 853-1582 15170









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SA5222 Даташит, Описание, Даташиты
Philips Semiconductors
Low-power FDDI transimpedance amplifier
Product specification
SA5222
DC ELECTRICAL CHARACTERISTICS
Typical data and Min and Max limits apply at TA = 25°C, and VCC1 = VCC2 = +5V, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
SA5222
Min Typ
VIN Input bias voltage
1.3 1.55
VO± Output bias voltage
2.9 3.2
VOS Output offset voltage
0
ICC Supply current
69
IOMAX
IIN
IINMAX
VOMAX
Output sink/source current
Input current (2% linearity)
Maximum input current overload threshold
Maximum differential output voltage swing
Test circuit 5, Procedure 2
Test circuit 5, Procedure 4
RL = , Test Circuit 5, Procedure 3
1.5 2
±60 ±90
±80 ±115
3.6
Max
1.8
3.5
±100
12
UNIT
V
V
mV
mA
mA
µA
µA
VP-P
AC ELECTRICAL CHARACTERISTICS
Typical data and Min and Max limits apply at TA = 25°C and VCC1 = VCC2 =+5V, unless otherwise specified.
SYMBOL
PARAMETER
RT Transresistance (differential output)
TEST CONDITIONS
DC tested, RL = , Test Circuit 5,
Procedure 1
Min
13.3
SA5222
Typ
16.6
Max
19.9
UNIT
k
RO
Output resistance
(differential output)
DC tested
30 60 90
RT
Transresistance
(single-ended output)
DC tested, RL =
6.65 8.3 9.95
k
RO
f3dB
RIN
CIN
R/V
R/T
IIN
IT
Output resistance
(single-ended output)
Bandwidth (-3dB)1
Input resistance
Input capacitance2
Transresistance power supply sensitivity
Transresistance ambient temperature sensi-
tivity
RMS noise current spectral density (referred
to input)
Integrated RMS noise current over the band-
width (referred to input)
CS = 0pF
CS = 1pF
DC tested
Test Circuit 1
VCC1 = VCC2 = 5 ±0.5V
TA = TA MAX - TA MIN
Test Circuit 2, f = 10MHz
Test circuit 2,
f = 50MHz
f = 100MHz
f = 150MHz
f = 50MHz
f = 100MHz
15 30
110 140
150
1
1.0
0.07
45
MHz
pF
%/V
%/oC
2.0 pAń ǸHz
15
25
36 nA
17
35
PSRR
PSRR
IINMAX
Power supply rejection ratio
Power supply rejection ratio3
Maximum input amplitude for output duty
cycle of 50 ±5%4
f = 150MHz
DC Tested, VCC = ±0.5V
f = 1.0MHz, Test Circuit 3
Test circuit 4
55
–55
–34
±120
dB
dB
µA
tr, tf Rise and fall times
10 – 90%
2.2 ns
tD Group delay
f = 10MHz
2.2 ns
NOTES:
1. Bandwidth is tested into 50load. Bandwidth into 1kload is approximately 165MHz.
2. Does not include Miller-multiplied capacitance of input device.
3. PSRR is output referenced and is circuit board layout dependent at higher frequencies. For best performance use a RF filter in VCC line.
4. Monitored in production via linearity and over load tests.
1995 Apr 26
2









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SA5222 Даташит, Описание, Даташиты
Philips Semiconductors
Low-power FDDI transimpedance amplifier
Product specification
SA5222
TEST CIRCUITS
SINGLE-ENDED
RT +
VOUT
VIN R +
2 @ S21 @ R
DIFFERENTIAL
RT +
VOUT
VIN R +
4 @ S21 @ R
1 + S22
RO = ZO 1 - S22 -20
1 + S22
RO = 2ZO 1 - S22 -40
NETWORK ANALYZER
ZO = 50
50
S-PARAMETER TEST SET
PORT1
PORT2
0.1uF
R=1k
VCC
OUT
IN DUT
OUT
20
20
.1uF
.1uF
GND1
GND2
ZO = 50
50
SPECTRUM ANALYZER
50
VCC
20 .1µF
10µF
OUT
IN DUT 20
OUT
.1µF
NE5209
CS GND1
GND2
10µF
50
Test Circuit 1: Bandwidth
Figure 2. Test Circuit1
TEST CIRCUITS (continued)
SD00361
Test Circuit 2: Noise
Figure 3. Test Circuit2
5V BIAS TEE
NETWORK ANALYZER
SD00362
S-PARAMETER TEST SET
PORT1
PORT2
50
0.1uF
VCC
20.1uF
OUT
NC IN DUT 20.1uF
OUT
GND1
GND2
100
BAL.
NHO300HB
CAL
50
UNBAL.
Test Circuit 3: PSRR
Figure 4. Test Circuit4
TRANSFORMER
CONVERSION
LOSS = 9dB
SD00363
1995 Apr 26
3










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