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SA741 PDF даташит

Спецификация SA741 изготовлена ​​​​«Polyfet RF Devices» и имеет функцию, называемую «SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR».

Детали детали

Номер произв SA741
Описание SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Производители Polyfet RF Devices
логотип Polyfet RF Devices логотип 

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SA741 Даташит, Описание, Даташиты
polyfet rf devices
SA741
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
TM
"Polyfet" process features
low feedback and output capacitances
resulting in high F t transistors with high
input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
35.0 Watts Single Ended
Package Style AA
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
Total
Device
Dissipation
60 Watts
Junction to
Case Thermal
Resistance
o
2.80 C/W
ABSOLUTE MAXIMUM RATINGS ( T = 25 oC )
Maximum
Junction
Temperature
200 oC
Storage
Temperature
oo
-65 C to 150 C
DC Drain
Current
2.5 A
Drain to
Gate
Voltage
125 V
Drain to
Source
Voltage
125 V
Gate to
Source
Voltage
20 V
RF CHARACTERISTICS ( 35.0 WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Power Gain
η Drain Efficiency
16
55
dB Idq = 0.20 A, Vds = 50.0 V, F = 175MHz
% Idq = 0.20 A, Vds = 50.0 V, F = 175 MHz
VSWR Load Mismatch Tolerance
20:1 Relative Idq = 0.20 A, Vds = 50.0 V, F = 175MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss
Idss
Drain Breakdown Voltage
Zero Bias Drain Current
125 V Ids = 10.00 mA, Vgs = 0V
1.0 mA
Vds = 50.0 V, Vgs = 0V
Igss Gate Leakage Current
1 uA
Vds = 0V Vgs = 30V
Vgs Gate Bias for Drain Current
1
7V
Ids = 0.05 A, Vgs = Vds
gM Forward Transconductance
0.8 Mho Vds = 10V, Vgs = 5V
Rdson Saturation Resistance
2.50
Ohm
Vgs = 20V, Ids = 1.00 A
Idsat
Saturation Current
3.50 Amp Vgs = 20V, Vds = 10V
Ciss Common Source Input Capacitance
48.0 pF Vds = 50.0 Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitance
0.2 pF Vds = 50.0 Vgs = 0V, F = 1 MHz
Coss Common Source Output Capacitance
17.0 pF Vds = 50.0 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 03/08/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com









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SA741 Даташит, Описание, Даташиты
SA741
POUT VS PIN GRAPH
SA741 Pin vs Pout Freq=175MHz, VDS=50V, Idq=.2A
48
44
40
36
32
28
24
20
16
12
8
4
0
0
Pout
Efficiency = 55%
Gain
0.5 1 1.5 2 2.5
PIN IN WATTS
20.00
19.00
18.00
17.00
16.00
15.00
14.00
13.00
12.00
11.00
3
IV CURVE
S1E 1 DIE IV
4
3.5
3
2.5
2
1.5
1
0.5
0
0246
vg=2v
Vg=4v
8 10 12
Vg=V6DvSINVOLTSvg=8v
14 16 18
0 vg=12v
20
S11 & S22 SMITH CHART
CAPACITANCE VS VOLTAGE
S1E 1 DIE CAPACITANCE
100 Ciss
10
Coss
1 Crss
0.1
0
5
10.00
10 15 20 25 30 35 40 45 50
VDS IN VOLTS
ID & GM VS VGS
S1E 1 DIE ID & GM Vs VG
Id
1.00 gM
0.10
0.01
0
2 4 6 8 10 12 14 16
Vgs in Volts
PACKAGE DIMENSIONS IN INCHES
18
Tolerance .XX +/-0.01 .XXX +/-.005 inches
POLYFET RF DEVICES
REVISION 03/08/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com










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