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SA9.0 PDF даташит

Спецификация SA9.0 изготовлена ​​​​«General Semiconductor» и имеет функцию, называемую «TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR».

Детали детали

Номер произв SA9.0
Описание TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR
Производители General Semiconductor
логотип General Semiconductor логотип 

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SA9.0 Даташит, Описание, Даташиты
SA5.0 THRU SA170CA
TRANSZORB™ TRANSIENT VOLTAGE SUPPRESSOR
Stand-off Voltage - 5.0 to 170 Volts Peak Pulse Power - 500 Watts
DO-204AC
1.0
(25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
0.300 (7.6)
0.230 (5.8)
1.0
(25.4)
MIN.
0.140 (3.6)
0.104 (2.6)
DIA.
Dimensions in inches and (millimeters)
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Glass passivated junction
500W peak pulse power surge capability with a
10/1000µs waveform, repetition rate (duty cycle): 0.01%
Excellent clamping capability
Low incremental surge resistance
Fast response time: typically less
than 1.0ps from 0 Volts to V(BR) for uni-directional and
5.0ns for bi-directional types
For devices with V(BR)10V, ID are typically less than
1.0µA
High temperature soldering guaranteed:
265°C/10 seconds 0.375” (9.5mm) lead length,
5lbs (2.3 kg) tension
MECHANICAL DATA
Case: JEDEC DO-204AC molded plastic body over
passivated junction
Terminals: Solder plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: For uni-directional types the color band denotes
the cathode, which is positive with respect to the anode
under normal TVS operation
Mounting Position: Any
Weight: 0.015 ounce, 0.4 gram
DEVICES FOR BIDIRECTIONAL APPLICATIONS
For bi-directional use C or CA Suffix. (e.g. SA5.0C, SA170CA).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified
Peak pulse power dissipation with a 10/1000µs waveform
(NOTE 1, FIG. 1)
Peak pulse current with a 10/1000µs waveform
(NOTE 1)
Steady state power dissipation at TL=75°C
lead lengths 0.375" (9.5mm) (NOTE 2)
Peak forward surge current, 8.3ms single half
sine-wave superimposed on rated load, unidirectional only
(JEDEC Method) (NOTE 3)
Maximum instantaneous forward voltage at 35A for
unidirectional only
Operating junction and storage temperature range
NOTES
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA=25°C per Fig. 2
(2) Mounted on copper pad area of 1.6 x 1.6” (40 x 40mm) per Fig. 5
(3) 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum
SYMBOL
PPPM
IPPM
PM(AV)
IFSM
VF
TJ, TSTG
VALUE
Minimum 500
SEE TABLE 1
3.0
70
3.5
-55 to +175
UNITS
Watts
Amps
Watts
Amps
Volts
°C
1/25/99









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SA9.0 Даташит, Описание, Даташиты
ELECTRICAL CHARACTERISTICS at (TA=25°C unless otherwise noted) TABLE 1
Device Type
SA5.0
SA5.0A
SA6.0
SA6.0A
SA6.5
SA6.5A
SA7.0
SA7.0A
SA7.5
SA7.5A
SA8.0
SA8.0A
SA8.5
SA8.5A
SA9.0
SA9.0A
SA10
SA10A
SA11
SA11A
SA12
SA12A
SA13
SA13A
SA14
SA14A
SA15
SA15A
SA16
SA16A
SA17
SA17A
SA18
SA18A
SA20
SA20A
SA22
SA22A
SA24
SA24A
SA26
SA26A
SA28
SA28A
SA30
SA30A
SA33
SA33A
SA36
SA36A
SA40
SA40A
Breakdown Voltage
V(BR)
(Volts) (NOTE 1)
MIN
6.40
6.40
6.67
6.67
7.22
7.22
7.78
7.78
8.33
8.33
8.89
8.89
9.44
9.44
10.0
10.0
11.1
11.1
12.2
12.2
13.3
13.3
14.4
14.4
15.6
15.6
16.7
16.7
17.8
17.8
18.9
18.9
20.0
20.0
22.2
22.2
24.4
24.4
26.7
26.7
28.9
28.9
31.1
31.1
33.3
33.3
36.7
36.7
40.0
40.0
44.4
44.4
MAX
7.30
7.00
8.15
7.37
8.82
7.98
9.51
8.60
10.2
9.21
10.9
9.83
11.5
10.4
12.2
11.1
13.6
12.3
14.9
13.5
16.3
14.7
17.6
15.9
19.1
17.2
20.4
18.5
21.8
19.7
23.1
20.9
24.4
22.1
27.1
24.5
29.8
26.9
32.6
29.5
35.3
31.9
38.0
34.4
40.7
36.8
44.9
40.6
48.9
44.2
54.3
49.1
Test
Current
at IT
(mA)
10
10
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
VWM
(Volts)
5.0
5.0
6.0
6.0
6.5
6.5
7.0
7.0
7.5
7.5
8.0
8.0
8.5
8.5
9.0
9.0
10.0
10.0
11.0
11.0
12.0
12.0
13.0
13.0
14.0
14.0
15.0
15.0
16.0
16.0
17.0
17.0
18.0
18.0
20.0
20.0
22.0
22.0
24.0
24.0
26.0
26.0
28.0
28.0
30.0
30.0
33.0
33.0
36.0
36.0
40.0
40.0
Maximum
Reverse
Leakage
at VWM
ID (NOTE3) (µA)
600
600
600
600
400
400
150
150
50
50
25
25
10
10
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Maximum
Peak Pulse
Current
IPPM
(NOTE 2)
(Amps)
52.1
54.3
43.9
48.5
40.7
44.7
37.6
41.7
35.0
38.8
33.3
36.8
31.4
34.7
29.6
32.5
26.6
29.4
24.9
27.5
22.7
25.1
21.0
23.3
19.4
21.6
18.6
20.5
17.4
19.2
16.4
18.1
15.5
17.1
14.0
15.4
22.7
14.1
11.6
12.9
10.7
11.9
10.0
11.0
9.3
10
8.5
9.4
7.8
8.6
7.0
7.8
Maximum
Clamping
Voltage at
IPPM
VC (Volts)
Maximum
Temperature
Coefficient
of V(BR)
(mV / °C)
9.6
9.2
11.4
10.3
12.3
11.2
13.3
12.0
14.3
12.9
15.0
13.6
15.9
14.4
16.9
15.4
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
50.1
45.4
53.5
48.4
59.0
53.3
64.3
58.1
71.4
64.5
5.0
5.0
5.0
5.0
5.0
5.0
6.0
6.0
7.0
7.0
7.0
7.0
8.0
8.0
9.0
9.0
10.0
10.0
11.0
11.0
12.0
12.0
13.0
13.0
14.0
14.0
16.0
16.0
19.0
17.0
20.0
19.0
21.0
20.0
25.0
23.0
28.0
25.0
31.0
28.0
31.0
30.0
35.0
31.0
39.0
36.0
42.0
39.0
46.0
41.0
51.0
46.0









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SA9.0 Даташит, Описание, Даташиты
ELECTRICAL CHARACTERISTICS at (TA=25°C unless otherwise noted) TABLE 1 (Cont’d)
Device Type
SA43
SA43A
SA45
SA45A
SA48
SA48A
SA51
SA51A
SA54
SA54A
SA58
SA58A
SA60
SA60A
SA64
SA64A
SA70
SA70A
SA75
SA75A
SA78
SA78A
SA85
SA85A
SA90
SA90A
SA100
SA100A
SA110
SA110A
SA120
SA120A
SA130
SA130A
SA150
SA150A
SA160
SA160A
SA170
SA170A
Breakdown Voltage
V(BR)
Volts (NOTE 1)
MIN
47.8
47.8
50.0
50.0
53.3
53.3
56.7
56.7
60.0
60.0
64.4
64.4
66.7
66.7
71.1
71.1
77.8
77.8
83.3
83.3
86.7
86.7
94.4
94.4
100
100
111
111
122
122
133
133
144
144
167
167
178
178
189
189
MAX
58.4
52.8
61.1
55.3
65.2
58.9
69.3
62.7
73.3
66.3
78.7
71.2
81.5
73.7
86.9
78.6
95.1
86.0
102
92.1
106
95.8
115
104
122
111
136
123
149
135
163
147
176
159
204
185
218
197
231
209
Test
Current
at IT
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
VWM
(Volts)
43.0
43.0
45.0
45.0
48.0
48.0
51.0
51.0
54.0
54.0
58.0
58.0
60.0
60.0
64.0
64.0
70.0
70.0
75.0
75.0
78.0
78.0
85.0
85.0
90.0
90.0
100
100
110
110
120
120
130
130
150
150
160
160
170
170
Maximum
Reverse
Leakage
at VWM
ID (NOTE3) (µA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Maximum
Peak Pulse
Current
IPPM
(NOTE 2)
(Amps)
6.5
7.2
6.2
6.9
5.8
6.5
5.5
6.1
5.2
5.7
4.9
5.3
4.7
5.2
4.4
4.9
4.0
4.4
3.7
4.1
3.6
4.0
3.3
3.6
3.1
3.4
2.8
3.1
2.6
2.8
2.3
2.6
2.2
2.4
1.9
2.1
1.7
1.9
1.6
1.8
Maximum
Clamping
Voltage at
IPPM
VC (Volts)
76.7
69.4
80.3
72.7
85.5
77.4
91.1
82.4
96.3
87.1
103
93.6
107
96.8
114
103
125
113
134
121
139
126
151
137
160
146
179
162
196
177
214
193
230
209
268
243
257
259
304
275
Maximum
Temperature
Coefficient
of V(BR)
(mV / °C)
55.0
50.0
58.0
52.0
63.0
56.0
66.0
61.0
71.0
65.0
78.0
70.0
80.0
71.0
86.0
76.0
94.0
85.0
101
91.0
105
95.0
114
103
121
110
135
123
148
133
162
146
175
158
203
184
217
196
230
208
NOTES
(1) V(BR) measured after IT applied for 300µs. IT=square wave pulse or equivalent
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bidirectional types with VWM of 10 Volts and less, the ID limit is doubled.
(4) All terms and symbols are consistent with ANSI/IEEE C62.35










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