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PDF SA910 Data sheet ( Hoja de datos )
| Número de pieza | SA910 | |
| Descripción | Variable gain RF predriver amplifier | |
| Fabricantes | Philips | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SA910 (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
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INTEGRATED CIRCUITS
SA910
Variable gain RF predriver amplifier
Product specification
1997 Aug 12
Philips
Semiconductors
1 page  
Philips Semiconductors
Variable gain RF predriver amplifier
Product specification
SA910
VCC1
VREF
VC
VCC1
C28
0.1uF
C23
0.001uF
C27
0.001uF
VCC1
VREF
OUTLPF
R15 1K
RFIN
RFin
0 OHM RESI GND
SA 910
C13 0.
1000pf
C14
0.1uF
4.7 uF
VC
VCCBIAS
ON–CHIP
BIAS
EXTERNAL
AMP
BIAS
130
PSENSE
R19 10K
C15
0.001uF
0 OHM RES
RFOUT1
GND
L3 1.8nH
C21 C26
0.1uF 0.001uF
RFOUT2
L1 33nH
C20 C25
0.001uF 0.1uF
VCC2
BIASOUT
C7 6.8pF
OFFSET R17 10K
C24
PWRUP 0.001uF
ATTENUATOR/
L4 3.9nH
L2 5.6nH C6 3.3pF
SPLITTER
RFout
C24
0.001uF
VPWRUP
BLOCK DIAGRAM
VCC1
VREF
OUTLPF
RFIN
GND
VC
VCC BIAS
R3 68
R4
100
R8 16.9
R5 100
R9 18
R10 18
TO PSENSE
RFOUT
ATTENUATOR/SPLITTER
NETWORK
Figure 3. Test Circuit Used In Characterizing SA910
SR01548
A1
ON-CHIP
BIAS
A2
EXTERNAL
AMP BIAS
Figure 4. Block Diagram
PSENSE
RFOUT1
RFOUT2
GND
BIASOUT
OFFSET
PWRUP
SR01068
1997 Aug 12
5
5 Page 
Philips Semiconductors
Variable gain RF predriver amplifier
40
35
30
25
20
15
10
5
0 –20 –18
T = 25°C, Input Freq = 830 MHz
–16 –14 –12 –10 –8 –6
dBm
–4
VCC = 3.0 V, VC = 2.0 V
VCC = 5.5 V, VC = 1.7 V
VCC = 2.7 V, VC = 2.5 V
Figure 17. PAE VS Input Power
–2 0
SR01532
1W POWER DISSIPATION (WATTS)
PD
=
(135 – TA)°C
75°C/W
0W
60°C
135°C
AMBIENT OPERATING TEMPERATURE
SR01533
Figure 18. Power De–Rating Curve
Product specification
SA910
VCC1 = 3.0V, VCC2 = 3.6V, T = 25°C
40
30
20 PIN = –20dBm@830 MHz
10
0
–10
–20
–30
–40
VC (VOLTS)
SR01534
Figure 19. Small Signal Gain VS VC
1997 Aug 12
11
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet SA910.PDF ] | |
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