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PDF SDG8204 Data sheet ( Hoja de datos )
| Número de pieza | SDG8204 | |
| Descripción | Dual N-Channel E nhancement Mode F ield E ffect Transistor | |
| Fabricantes | SamHop Microelectronics Corp. | |
| Logotipo |  |
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S amHop Microelectronics C orp.
S DG8204
December , 2002
Dual N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S ID R DS (ON) ( m W ) Max
20V 6A
28 @ VGS = 4.0V
34 @ VGS = 2.5V
TS S OP
1
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
D2 S 2 S 2 G2
8 7 65
(TOP VIE W)
12 34
D1 S 1 S 1 G1
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous a @ TJ=125 C
-Pulsedb (300us Pulse Width)
Drain-S ource Diode Forward C urrent a
Maximum P ower Dissipation a
Operating Junction and S torage
Temperature R ange
S ymbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Limit
20
8
6.0
35
1.7
1.5
-55 to 150
Unit
V
V
A
A
A
W
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient a
R JA
85
C /W
1
1 page  
S DG8204
V DD
ton toff
5 V IN R L
D
V OUT
td(on)
tr td(off)
90%
tf
90%
VG S
VOUT
10% INVE R TE D
10%
RGEN G
90%
S
VIN 50%
50%
10%
PULS E WIDTH
F igure 11. S witching T es t C ircuit
F igure 12. S witching Waveforms
2
1
Duty C ycle=0.5
0.2
0.1 0.1
0.05
0.02
0.01
10-4
S ingle P uls e
10-3
10-2
10-1
S quare Wave P uls e Duration (s ec)
1
P DM
t1
t2
1. R thJA (t)=r (t) * R thJA
2. R thJA=S ee Datas heet
3. T J M-T A = P DM* R thJ A (t)
4. Duty C ycle, D=t1/t2
10
100
F igure 13. Normalized T hermal T rans ient Impedance C urve
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SDG8204.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
| SDG8204 | Dual N-Channel E nhancement Mode F ield E ffect Transistor | SamHop Microelectronics Corp. |
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