SDT12S60 PDF даташит
Спецификация SDT12S60 изготовлена «Infineon Technologies AG» и имеет функцию, называемую «Silicon Carbide Schottky Diode». |
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Детали детали
Номер произв | SDT12S60 |
Описание | Silicon Carbide Schottky Diode |
Производители | Infineon Technologies AG |
логотип |
8 Pages
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Preliminary data
Silicon Carbide Schottky Diode
Worlds first 600V Schottky diode
Revolutionary semiconductor
material - Silicon Carbide
Switching behavior benchmark
No reverse recovery
No temperature influence on
the switching behavior
No forward recovery
SDT12S60
Product Summary
VRRM
Qc
IF
600 V
30 nC
12 A
P-TO220-2-2.
Type
SDT12S60
Package
P-TO220-2-2.
Ordering Code
Q67040-S4470
Marking
D12S60
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous forward current, TC=100°C
RMS forward current, f=50Hz
IF
I FRMS
Surge non repetitive forward current, sine halfwave IFSM
TC=25°C, tp=10ms
Repetitive peak forward current
I FRM
Tj=150°C, TC=100°C, D=0.1
Non repetitive peak forward current
I FMAX
tp=10µs, TC=25°C
i 2t value, TC=25°C, tp=10ms
Repetitive peak reverse voltage
i2dt
VRRM
Surge peak reverse voltage
VRSM
Power dissipation, TC=25°C
Operating and storage temperature
Ptot
Tj , Tstg
Pin 1 Pin 2
CA
Value
12
17
36
49
120
6.48
600
600
88.2
-55... +175
Pin 3
Unit
A
A²s
V
W
°C
Page 1
2002-01-14
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Preliminary data
SDT12S60
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
Symbol
Values
Unit
min. typ. max.
RthJC
RthJA
- - 1.7 K/W
- - 62
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
Static Characteristics
Diode forward voltage
IF=12A, Tj=25°C
IF=12A, Tj=150°C
VF
- 1.5 1.7
- 1.7 2.1
Reverse current
VR=600V, Tj=25°C
VR=600V, Tj=150°C
IR
- 40 400
- 100 2000
Unit
V
µA
Electrical Characteristics,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
AC Characteristics
Total capacitive charge
VR=400V, IF=12A, diF/dt=200A/µs, Tj=150°C
Switching time
VR=400V, IF=12A, diF/dt=200A/µs, Tj=150°C
Total capacitance
Qc - 30 -
trr - n.a. -
C
VR=1V, TC=25°C, f=1MHz
VR=300V, TC=25°C, f=1MHz
VR=600V, TC=25°C, f=1MHz
- 450 -
- 45
-
- 43
-
Unit
nC
ns
pF
Page 2
2002-01-14
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Preliminary data
SDT12S60
1 Power dissipation
Ptot = f (TC)
90
W
2 Diode forward current
IF= f (TC)
parameter: Tj175 °C
24
A
20
70
18
60 16
50 14
12
40
10
30 8
20 6
4
10
2
00 20 40 60 80 100 120 140 °C 180
TC
00 20 40 60 80 100 120 140 °C 180
TC
3 Typ. forward characteristic
IF = f (VF)
parameter: Tj , tp = 350 µs
24
A
150°C
125°C
100°C
16 25°C
-40°C
12
4 Typ. forward power dissipation vs.
average forward current
PF(AV)=f(IF) TC=100°C, d = tp/T
44
W
d=0.1
36
d=0.2
d=0.5
32 d=1
28
24
20
16
8
12
48
4
00 0.5 1 1.5 V 2.5
VF
00 2 4 6 8 10 12 A 16
IF(AV)
Page 3
2002-01-14
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