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SE2522L PDF даташит

Спецификация SE2522L изготовлена ​​​​«SiGe Semiconductor Inc.» и имеет функцию, называемую «RangeCharger 2.4 GHz Power Amplifier And Power Detector IC Preliminary Information».

Детали детали

Номер произв SE2522L
Описание RangeCharger 2.4 GHz Power Amplifier And Power Detector IC Preliminary Information
Производители SiGe Semiconductor Inc.
логотип SiGe Semiconductor  Inc. логотип 

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SE2522L Даташит, Описание, Даташиты
SE2522L
RangeCharger™ 2.4 GHz Power Amplifier And Power Detector IC
Preliminary Information
Applications
IEEE 802.11b DSSS radios, Wireless LAN
2.4GHz cordless phones, ISM radios
Features
Integrated power detector circuit
High linear output power for IEEE802.11b:
+20dBm, ACPR 1st lobe –30dBc, 2nd lobe –50dBc
Low current consumption: 110mA at 3.3V
High saturated output power for cordless telephone
applications: +23dBm, 140mA at 3.6V
Single supply voltage: 2.7 to 3.6V
Wide Temperature range: -40°C to +85°C
Integrated linear analog control for DC current and
output power management
Small plastic package: 8 Pin LPCC
Ordering Information
Type
SE2522L
SE2522L-R
Package
8 Pin LPCC
8 Pin LPCC
SE2522L-EK1
Evaluation Kit
Remark
Samples
Shipped in
Tape & Reel
Functional Block Diagram
Product Description
The SE2522L is a power amplifier IC designed for the
2.4GHz ISM band and compliant with the IEEE 802.11b
WLAN standard. It typically provides +20dBm linear
output power requiring only 110mA at 3.3V. It can also
be utilized in 2.4GHz cordless telephone applications
where it typically provides +23dBm saturated output
power at 3.6V.
The SE2522 includes an integrated power detector
circuit for closed loop monitoring of output power. It has
an input power range of 15dB with an accuracy of
±1.0dB. An accurate automatic level control function
can easily be implemented using this power detector
circuit.
The SE2522L contains a linear analog control (0.1 to
1.6V) for minimizing DC current consumption and
maximizing PAE.
The SE2522L includes a digital enable control for
device on/off control where ramping is typically 1 µsec.
This device is capable of operating at a duty cycle of
100 percent.
VCTL VCC0
VEN
Bias Generator
IN Stage 1
GND
VCC1
Stage 2
OUT/ VCC2
Power Detector
VDET
18-DST-01 Rev 2.4 Aug 7/02
1 of 8









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SE2522L Даташит, Описание, Даташиты
SE2522L
RangeCharger™ 2.4 GHz Power Amplifier And Power Detector IC
Preliminary Information
Pin Out Diagram
Note: Pads and die pad shown are at the bottom of package.
VDET 1
VCTL 2
VEN 3
IN 4
SE2522L
Top View
2522L
8 OUT/VCC2
7 NC
6 VCC1
5 VCC0
OUT/VCC2 8
NC 7
VCC1 6
VCC0 5
SE2522L
Bottom View
Die Pad
1 VDET
2 VCTL
3 VEN
4 IN
Pin Out Description
Pin No.
1
2
3
4
5
6
7
8
Die Pad
Name
VDET
VCTL
VEN
IN
VCC0
VCC1
NC
OUT/VCC2
GND
Description
Analog power detector output
Controls the RF output power and DC current level of the power amplifier. An analog
control signal between 0.1V and 1.6V varies the PA output power between Min. and
Max. values.
Power Amplifier Enable pin. A digital control signal with logic high (power up) and logic
low (power down) is used to turn the device on and off.
Power amplifier RF input, external input matching network with DC blocking is required.
Bias supply voltage.
Stage 1 collector supply voltage, an external inter-stage matching network is required.
No connect
PA Output and Stage2 collector supply voltage, external output matching network with
DC blocking is required.
Heatslug Die Pad is ground
18-DST-01 Rev 2.4 Aug 7/02
2 of 8









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SE2522L Даташит, Описание, Даташиты
SE2522L
RangeCharger™ 2.4 GHz Power Amplifier And Power Detector IC
Preliminary Information
Absolute Maximum Ratings
These are stress ratings only. Exposure to stresses beyond these maximum ratings may cause permanent damage
to, or affect the reliability of the device. Avoid operating the device outside the recommended operating conditions
defined below. This device is ESD sensitive with an ESD rating of < 600V. Handling and assembly of this device
should be at ESD protected workstations.
Symbol
VCC
VCTL
VEN
PIN
TSTG
Tj
Parameter
Supply Voltage
Control Voltage
Ramping Voltage
RF Input Power
Storage Temperature Range
Maximum Junction Temperature
Min.
-0.3
-0.3
-0.3
-40
Max.
+3.6
VCC
VCC
+8
+150
+150
Unit
V
V
V
dBm
°C
°C
Recommended Operating Conditions
Symbol
TA
VCC
Parameter
Operating Temperature
Supply Voltage
Min.
-40
2.7
Typ.
3.3
Max.
+85
3.6
Unit
°C
V
DC Electrical Characteristics
Conditions: VCC0=VCC1=VCC2=VEN=3.3V, VCTL=1.6V, TA =25°C, f =2.45GHz, using IEEE802.11b modulation, Input and
Output externally matched to 50Ω, unless otherwise noted.
Symbol
ICC
ICC(sat)
VCTL
ICTL
VEN
ISTBY
Parameter
Supply Current, VCTL = 1.6V, PIN = -7dBm
Supply Current (sat) @ PIN = +2dBm
PA Output Power Control Voltage Range
Current sunk by VCTL Pin
Logic High Voltage
Logic Low Voltage
Leakage Current when VEN = 0V, VCTL = 0V
Min.
-
-
0.1
2.0
Typ.
110
140
55
0.1
Max.
130
175
1.6
100
0.8
200
Unit
mA
mA
V
µA
V
V
µA
18-DST-01 Rev 2.4 Aug 7/02
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Номер в каталогеОписаниеПроизводители
SE2522BLRangeCharger 2.4GHz +23 dBm Power Amplifier Preliminary InformationSiGe Semiconductor  Inc.
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SE2522LRangeCharger 2.4 GHz Power Amplifier And Power Detector IC Preliminary InformationSiGe Semiconductor  Inc.
SiGe Semiconductor Inc.
SE2522L-EK1RangeCharger 2.4 GHz Power Amplifier And Power Detector IC Preliminary InformationSiGe Semiconductor  Inc.
SiGe Semiconductor Inc.
SE2522L-RRangeCharger 2.4 GHz Power Amplifier And Power Detector IC Preliminary InformationSiGe Semiconductor  Inc.
SiGe Semiconductor Inc.

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