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SEMD48 PDF даташит

Спецификация SEMD48 изготовлена ​​​​«Infineon Technologies AG» и имеет функцию, называемую «NPN/PNP Silicon Digital Transistor Array Preliminary data».

Детали детали

Номер произв SEMD48
Описание NPN/PNP Silicon Digital Transistor Array Preliminary data
Производители Infineon Technologies AG
логотип Infineon Technologies AG логотип 

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SEMD48 Даташит, Описание, Даташиты
SEMD48
NPN/PNP Silicon Digital Transistor Array
Preliminary data
Switching circuit, inverter, interface circuit,
driver circuit
Two (galvanic) internal isolated NPN/PNP
Transistors in one package
Built in bias resistor
NPN: R1 = 47k, R2 = 47k
PNP: R1= 2.2k, R2 = 47k
4
5
6
3
2
1
Tape loading orientation
Top View
3 21
45 6
Direction of Unreeling
Marking on SOT666 package
(for example W R)
corresponds to pin 1 of device
Position in tape: pin 1
same of feed hole
side
C1 B2 E2
654
R2
R1
TR1 R1
R2
TR2
123
E1 B1 C2
EHA07176
Type
SEMD48
Marking
WT
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
NPN
Emitter-base voltage
PNP
Input on voltage
NPN
Input on voltage
PNP
DC collector current
NPN
DC collector current
PNP
Total power dissipation, TS = 75 °C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBO
VEBO
Vi(on)
Vi(on)
IC
IC
Ptot
Tj
Tstg
Value
50
50
10
5
50
10
70
100
250
150
-65...+150
Unit
V
mA
mW
°C
1 Feb-26-2004









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SEMD48 Даташит, Описание, Даташиты
SEMD48
Thermal Resistance
Junction - soldering point1)
RthJS
300
K/W
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics for NPN Type
Collector-emitter breakdown voltage
IC = 100 µA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
Collector cutoff current
VCB = 40 V, IE = 0
Emitter cutoff current
VEB = 10 V, IC = 0
DC current gain 2)
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage2)
IC = 10 mA, IB = 0.5 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Input on Voltage
IC = 2 mA, VCE = 0.3 V
Input resistor
Resistor ratio
V(BR)CEO 50
-
-V
V(BR)CBO 50
-
-
ICBO
- - 100 nA
IEBO
- - 164 µA
hFE
70 -
--
VCEsat - - 0.3 V
Vi(off)
0.8 - 1.5
Vi(on)
1-3
R1
R1/R2
32 47 62 k
0.9 1 1.1 -
AC Characteristics for NPN Type
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
fT - 100 - MHz
Ccb - 3 - pF
1For calculation of RthJA please refer to Application Note Thermal Resistance
2) Pulse test: t < 300µs; D < 2%
2 Feb-26-2004









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SEMD48 Даташит, Описание, Даташиты
SEMD48
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics for PNP Type
Collector-emitter breakdown voltage
IC = 100 µA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
Collector cutoff current
VCB = 40 V, IE = 0
Emitter cutoff current
VEB = 5 V, IC = 0
DC current gain 1)
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage 1)
IC = 10 mA, IB = 0.5 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Input on voltage
IC = 2 mA, VCE = 0.3 V
Input resistor
Resistor ratio
V(BR)CEO 50
-
-V
V(BR)CBO 50
-
-
ICBO
- - 100 nA
IEBO
- - 164 µA
hFE
70 -
--
VCEsat - - 0.3 V
Vi(off)
0.4 - 0.8
Vi(on)
0.5 - 1.1
R1
R1/R2
1.5 2.2 2.9 k
0.042 0.047 0.052 -
AC Characteristics for PNP Type
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
fT - 200 - MHz
Ccb - 3 - pF
1) Pulse test: t < 300µs; D < 2%
3
Feb-26-2004










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Номер в каталогеОписаниеПроизводители
SEMD4NPN/PNP Silicon Digital Transistor Array Preliminary dataInfineon Technologies AG
Infineon Technologies AG
SEMD48NPN/PNP Silicon Digital Transistor Array Preliminary dataInfineon Technologies AG
Infineon Technologies AG

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