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SEMD9 PDF даташит

Спецификация SEMD9 изготовлена ​​​​«Infineon Technologies AG» и имеет функцию, называемую «NPN/PNP Silicon Digital Transistor Array Preliminary data».

Детали детали

Номер произв SEMD9
Описание NPN/PNP Silicon Digital Transistor Array Preliminary data
Производители Infineon Technologies AG
логотип Infineon Technologies AG логотип 

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SEMD9 Даташит, Описание, Даташиты
SEMD9
NPN/PNP Silicon Digital Transistor Array
Preliminary data
Switching circuit, inverter, interface circuit,
driver circuit
Two (galvanic) internal isolated NPN/PNP
Transistors in one package
Built in bias resistor (R1=10k, R2=47k)
4
5
6
Tape loading orientation
Top View
3 21
45 6
Direction of Unreeling
Marking on SOT666 package
(for example W R)
corresponds to pin 1 of device
Position in tape: pin 1
same of feed hole
side
C1 B2 E2
654
R2
R1
TR1 R1
R2
TR2
123
E1 B1 C2
EHA07176
3
2
1
Type
SEMD9
Marking
WU
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
DC collector current
Total power dissipation, TS = 75 °C
Junction temperature
Storage temperature
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
Thermal Resistance
Junction - soldering point1)
RthJS
1For calculation of RthJA please refer to Application Note Thermal Resistance
Value
50
50
6
20
100
250
150
-65 ... 150
300
Unit
V
mA
mW
°C
K/W
1 Feb-26-2004









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SEMD9 Даташит, Описание, Даташиты
SEMD9
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 100 µA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
Collector cutoff current
VCB = 40 V, IE = 0
Emitter cutoff current
VEB = 6 V, IC = 0
DC current gain 1)
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Input on Voltage
IC = 2 mA, VCE = 0.3 V
Input resistor
Resistor ratio
V(BR)CEO 50
-
-V
V(BR)CBO 50
-
-
ICBO
- - 100 nA
IEBO
- - 167 µA
hFE
70 -
--
VCEsat - - 0.3 V
Vi(off)
0.5 -
1
Vi(on)
0.5 - 1.4
R1
R1/R2
7
0.19
10
0.21
13 k
0.24 -
AC Characteristics
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
fT - 150 - MHz
Ccb - 2 - pF
1) Pulse test: t < 300µs; D < 2%
2
Feb-26-2004









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SEMD9 Даташит, Описание, Даташиты
NPN Type
DC Current Gain hFE = f (IC)
VCE = 5V (common emitter configuration)
10 3
-
10 2
10 1
SEMD9
Collector-Emitter Saturation Voltage
VCEsat = f (IC), hFE = 20
10 2
mA
10 1
10
0
10
-1
10 0
10 1 mA 10 2
IC
Input on Voltage Vi(on) = f (IC)
VCE = 0.3V (common emitter configuration)
10 0
0
0.2 0.4 0.6 V
1
VCEsat
Input off voltage Vi(off) = f (IC)
VCE = 5V (common emitter configuration)
10 2
mA
10 1
10 1
mA
10 0
10 -1
10 0
10 -2
10
-1
10
-1
10 0
10 1 V 10 2
Vi(on)
10 -3
0 0.5 1 V
2
Vi(off)
3 Feb-26-2004










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Номер в каталогеОписаниеПроизводители
SEMD10NPN/PNP Silicon Digital Transistor Array Preliminary dataInfineon Technologies AG
Infineon Technologies AG
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SEMD13NPN/PNP Silicon Digital Transistor Array Preliminary dataInfineon Technologies AG
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SEMD2NPN/PNP Silicon Digital Transistor Array Preliminary dataInfineon Technologies AG
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