DataSheet26.com

SEMH10 PDF даташит

Спецификация SEMH10 изготовлена ​​​​«Infineon Technologies AG» и имеет функцию, называемую «NPN Silicon Digital Transistor Array Preliminary data».

Детали детали

Номер произв SEMH10
Описание NPN Silicon Digital Transistor Array Preliminary data
Производители Infineon Technologies AG
логотип Infineon Technologies AG логотип 

4 Pages
scroll

No Preview Available !

SEMH10 Даташит, Описание, Даташиты
SEMH10
NPN Silicon Digital Transistor Array
Preliminary data
Switching circuit, inverter, interface circuit,
driver circuit
Two ( galvanic) internal isolated Transistors
with good matching in one package
Built in bias resistor (R1=2.2k, R2=47k)
4
5
6
3
2
1
C1 B2 E2
654
Type
SEMH10
Marking
WH
R2
R1
TR1 R1
R2
TR2
123
E1 B1 C2
EHA07174
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
DC collector current
Total power dissipation, TS = 75 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point1)
Symbol
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
RthJS
Value
50
50
5
10
100
250
150
-65 ... 150
300
Unit
V
mA
mW
°C
K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
1 Feb-09-2004









No Preview Available !

SEMH10 Даташит, Описание, Даташиты
SEMH10
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 100 µA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
Collector cutoff current
VCB = 40 V, IE = 0
Emitter cutoff current
VEB = 5 V, IC = 0
DC current gain 1)
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Input on Voltage
IC = 2 mA, VCE = 0.3 V
Input resistor
Resistor ratio
V(BR)CEO 50
-
-V
V(BR)CBO 50
-
-
ICBO
- - 100 nA
IEBO
- - 164 µA
hFE
70 -
--
VCEsat - - 0.3 V
Vi(off)
0.4 - 0.8
Vi(on)
0.5 - 1.1
R1
R1/R2
1.5 2.2 2.9 k
0.042 0.047 0.052 -
AC Characteristics
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
fT - 170 - MHz
Ccb - 3 - pF
1) Pulse test: t < 300µs; D < 2%
2
Feb-09-2004









No Preview Available !

SEMH10 Даташит, Описание, Даташиты
SEMH10
DC Current Gain hFE = f (IC)
VCE = 5V (common emitter configuration)
10 3
-
10 2
10 1
Collector-Emitter Saturation Voltage
VCEsat = f (IC), hFE = 20
10 2
mA
10 1
10
0
10
-1
10 0
10 1 mA 10 2
IC
Input on Voltage Vi(on) = f (IC)
VCE = 0.3V (common emitter configuration)
10 0
0
0.1 0.2 0.3 V
0.5
VCEsat
Input off voltage Vi(off) = f (IC)
VCE = 5V (common emitter configuration)
10 2
mA
10 1
10 1
mA
10 0
10 -1
10 0
10 -2
10
-1
10
-1
10 0
10 1 V 10 2
Vi(on)
10 -3
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 V 1
Vi(off)
3 Feb-09-2004










Скачать PDF:

[ SEMH10.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
SEMH1NPN Silicon Digital Transistor Array Preliminary dataInfineon Technologies AG
Infineon Technologies AG
SEMH10NPN Silicon Digital Transistor Array Preliminary dataInfineon Technologies AG
Infineon Technologies AG
SEMH11NPN Silicon Digital Transistor Array Preliminary dataInfineon Technologies AG
Infineon Technologies AG
SEMH13NPN Silicon Digital Transistor Array Preliminary dataInfineon Technologies AG
Infineon Technologies AG

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск