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CFB1370 PDF даташит

Спецификация CFB1370 изготовлена ​​​​«Continental Device» и имеет функцию, называемую «PNP Silicon Epitaxial Power Transistor».

Детали детали

Номер произв CFB1370
Описание PNP Silicon Epitaxial Power Transistor
Производители Continental Device
логотип Continental Device логотип 

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CFB1370 Даташит, Описание, Даташиты
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
PNP SILICON EPITAXIAL POWER TRANSISTOR
IS/ISO 9002
IS / IECQC 700000
Lic# QSC/L- 000019.2 IS / IECQC 750100
CFB1370
(9AW)
TO-220FP
Designed For AF Power Amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION
SYMBOL
VALUE
Collector -Base Voltage
VCBO
60
Collector -Emitter Voltage
VCEO
60
Emitter- Base Voltage
VEBO
5.0
Collector Current
IC
3.0
Peak
ICP
6.0
Power Dissipation @ Ta=25 deg C
PC
2.0
Power Dissipation @ Tc=25 deg C
30
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)
DESCRIPTION
SYMBOL TEST CONDITION MIN TYP
Collector Emitter Voltage
VCEO IC=1mA, IB=0
60 -
Collector Base Voltage
VCBO IC=50uA, IE=0
60 -
Emitter Base Voltage
VEBO IE=50uA,IC=0
5.0 -
Collector Cut off Current
ICBO VCB=60V, IE=0
--
Emitter Cut off Current
IEBO VEB=4V,IC=0
--
Collector Emitter Saturation Voltage
VCE(Sat) IC=2A,IB=0.2A
--
Base Emitter Saturation Voltage
VBE(Sat) IC=2A, IB=0.2A
--
DC Current Gain
hFE IC=0.5A, VCE=5V 60
-
Dynamic Characteristics
Transition Frequency
ft VCE=5V,IC=0.5A, - 15
f=5MHz
Collector Output Capacitance
Cob VCB=10V, IE=0
- 80
f=1MHz
hFE CLASSIFICATION:-
D : 60 -120;
E : 100 -200
MARKING :
CFB
1370
D
CFB
1370
E
UNIT
V
V
V
A
A
W
W
deg C
deg C
MAX
-
-
-
10
10
1.5
1.5
320
UNIT
V
V
V
uA
uA
V
V
- MHz
- pF
F : 160 -320
CFB
1370
F
Continental Device India Limited
Data Sheet
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CFB1370 Даташит, Описание, Даташиты
A
D
M
TO-220FP (Fully Isolated) Plastic Package
C
B DIM MIN MAX
A 9.96 10.36
B 2.60 3.00
C 4.50 4.90
D 3.10 3.30
E 7.90 8.20
F 16.87 17.27
G 0.45 0.50
H 2.56 2.96
J 2.34 2.74
K — 3.08
L — 30.05
M — 0.80
1
23
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
JJ
12 3
Packing Detail
G
H
PACKAGE
STANDARD PACK
Details
Net Weight/Qty
TO-220 / FP
200 pcs/polybag 396 gm/200 pcs
50 pcs/tube
120 gm/50 pcs
INNER CARTON BOX
Size Qty
3" x 7.5" x 7.5"
3.5" x 3.7" x 21.5"
1.0K
1.0K
OUTER CARTON BOX
Size Qty Gr Wt
17" x 15" x 13.5"
19" x 19" x 19"
16.0K 36 kgs
10.0K 29 kgs
Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web
Site/CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290
e-mail [email protected] www.cdil.com
Continental Device India Limited
Data Sheet
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CFB1370PNP Silicon Epitaxial Power TransistorContinental Device
Continental Device

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