NTMS10P02R2 PDF даташит
Спецификация NTMS10P02R2 изготовлена «On Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
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Детали детали
Номер произв | NTMS10P02R2 |
Описание | Power MOSFET ( Transistor ) |
Производители | On Semiconductor |
логотип |
6 Pages
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NTMS10P02R2
Power MOSFET
−10 Amps, −20 Volts
P−Channel Enhancement−Mode
Single SO−8 Package
Features
• Ultra Low RDS(on)
• Higher Efficiency Extending Battery Life
• Logic Level Gate Drive
• Miniature SO−8 Surface Mount Package
• Diode Exhibits High Speed, Soft Recovery
• Avalanche Energy Specified
• SO−8 Mounting Information Provided
Applications
• Power Management in Portable and Battery−Powered Products, i.e.:
Cellular and Cordless Telephones and PCMCIA Cards
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Thermal Resistance −
Junction−to−Ambient (Note 1.)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ 25°C
Continuous Drain Current @ 70°C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 3.)
Thermal Resistance −
Junction−to−Ambient (Note 2.)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ 25°C
Continuous Drain Current @ 70°C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 3.)
Operating and Storage
Temperature Range
VDSS
VGS
RθJA
PD
ID
ID
PD
ID
IDM
RθJA
PD
ID
ID
PD
ID
IDM
TJ, Tstg
−20
"12
Vdc
Vdc
50
2.5
−10
−8.0
0.6
−5.5
−50
°C/W
W
A
A
W
A
A
80
1.6
−8.8
−6.4
0.4
−4.5
−44
−55 to
+150
°C/W
W
A
A
W
A
A
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = −20 Vdc, VGS = −4.5 Vdc,
Peak IL = 5.0 Apk, L = 40 mH,
RG = 25 Ω)
EAS
500 mJ
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
TL
260 °C
1. Mounted onto a 2″ square FR−4 Board (1″ sq. Cu 0.06″ thick single sided),
t = 10 seconds.
2. Mounted onto a 2″ square FR−4 Board (1″ sq. Cu 0.06″ thick single sided),
t = steady state.
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2%.
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−10 AMPERES
−20 VOLTS
14 mW @ VGS = −4.5 V
P−Channel
D
G
S
8
1
SO−8
CASE 751
STYLE 12
MARKING DIAGRAM
& PIN ASSIGNMENT
Source
Source
Source
Gate
1
2
3
4
E10P02
LYWW
8
Drain
7
Drain
6
Drain
5
Drain
Top View
E10P02
L
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping†
NTMS10P02R2 SO−8
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2003
December, 2003 − Rev. 2
1
Publication Order Number:
NTMS10P02R2/D
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NTMS10P02R2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (Note 4.)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = −250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = −20 Vdc, VGS = 0 Vdc, TJ = 25°C)
(VDS = −20 Vdc, VGS = 0 Vdc, TJ = 70°C)
Gate−Body Leakage Current
(VGS = −12 Vdc, VDS = 0 Vdc)
Gate−Body Leakage Current
(VGS = +12 Vdc, VDS = 0 Vdc)
IDSS
IGSS
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = −250 µAdc)
Temperature Coefficient (Negative)
VGS(th)
Static Drain−to−Source On−State Resistance
(VGS = −4.5 Vdc, ID = −10 Adc)
(VGS = −2.5 Vdc, ID = −8.8 Adc)
Forward Transconductance (VDS = −10 Vdc, ID = −10 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = −16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Notes 5. & 6.)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = −10 Vdc, ID = −1.0 Adc,
VGS = −4.5 Vdc,
RG = 6.0 Ω)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = −10 Vdc, ID = −10 Adc,
VGS = −4.5 Vdc,
RG = 6.0 Ω)
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
(VDS = −10 Vdc,
VGS = −4.5 Vdc,
ID = −10 Adc)
BODY−DRAIN DIODE RATINGS (Note 5.)
Diode Forward On−Voltage
(IS = −2.1 Adc, VGS = 0 Vdc)
(IS = −2.1 Adc, VGS = 0 Vdc, TJ = 125°C)
Diode Forward On−Voltage
(IS = −10 Adc, VGS = 0 Vdc)
(IS = −10 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
(IS = −2.1 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
Reverse Recovery Stored Charge
4. Handling precautions to protect against electrostatic discharge is mandatory.
5. Indicates Pulse Test: Pulse Width = 300 µs max, Duty Cycle = 2%.
6. Switching characteristics are independent of operating junction temperature.
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Qtot
Qgs
Qgd
VSD
VSD
trr
ta
tb
QRR
Min
−20
−
−
−
−
−
−0.6
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ Max Unit
−
−12.1
−
−
−
−
−
−
−1.0
−5.0
−100
100
Vdc
mV/°C
µAdc
nAdc
nAdc
−0.88
2.8
0.012
0.017
30
−1.20
−
0.014
0.020
−
Vdc
mV/°C
Ω
Mhos
3100
1100
475
3640
1670
1010
pF
25 35 ns
40 65
110 190
110 190
25 − ns
100 −
100 −
125 −
48 70 nC
6.5 −
17 −
−0.72
−0.60
−0.90
−0.75
65
25
40
0.075
−1.2
−
−
−
100
−
−
−
Vdc
Vdc
ns
µC
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NTMS10P02R2
20
−2.3 V −2.1 V
10
VDS ≥ −10 V
15
−10 V
TJ = 25°C
8.0
−3.1 V
−1.9 V
10
6.0
4.0
25°C
5.0
VGS = −1.7 V
2.0
100°C
TJ = −55°C
0
0 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
0
0 0.5 1.0 1.5 2.0 2.5
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.100
0.075
0.050
0.025
ID = −10 A
TJ = 25°C
0.020
TJ = 25°C
0.016
0.012
VGS = −2.5 V
VGS = −4.5 V
0 0.008
0 2.0 4.0 6.0 8.0 10
6.0
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
10 14 18
−ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus
Gate−To−Source Voltage
Figure 4. On-Resistance versus Drain Current
and Gate Voltage
1.6
1.4
ID = −10 A
VGS = −4.5 V
1.2
10,000
VGS = 0 V
1000
TJ = 125°C
1.0 TJ = 100°C
100
0.8
0.6
−50 −25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
150
Figure 5. On−Resistance Variation with
Temperature
10
2.0 6.0 10 14
18
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage Current
versus Voltage
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