H8NA60FI PDF даташит
Спецификация H8NA60FI изготовлена «ST Microelectronics» и имеет функцию, называемую «STH8NA60FI». |
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Детали детали
Номер произв | H8NA60FI |
Описание | STH8NA60FI |
Производители | ST Microelectronics |
логотип |
10 Pages
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STW8NA60
® STH8NA60FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE
STW 8NA60
S TH8NA 60F I
V DSS
600 V
600 V
RDS(on)
<1Ω
<1Ω
ID
8A
5A
s TYPICAL RDS(on) = 0.92 Ω
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
s REDUCED THRESHOLD VOLTAGE SPREAD
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
23
1
TO-247
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Pa ram et er
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 kΩ)
VGS G ate-source Volt age
ID Drain Current (continuous) at Tc = 25 oC
ID Drain Current (continuous) at Tc = 100 oC
IDM (•)
Ptot
Drain Current (pulsed)
T otal Dissipat ion at Tc = 25 oC
Derating Factor
VISO I nsulation W ithstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
October 1998
Valu e
ST W8NA60 STH8NA60FI
6 00
6 00
± 30
85
5.1 3.2
32 32
150 60
1.2 0.48
4000
-65 to 150
1 50
Unit
V
V
V
A
A
A
W
W /o C
V
oC
oC
1/10
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STW8NA60-STH8NA60FI
THERMAL DATA
Rthj-case
R th j -a mb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature F or Soldering Purpose
T O - 247
0.83
ISOWATT 218
2. 08
30
0. 1
3 00
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbo l
IAR
EAS
P a ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Max Value
8
480
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)D SS
IDSS
IGSS
P ar am et e r
Test Conditions
Dr ain- s our c e
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rat ing
Drain Current (VGS = 0) VDS = Max Rat ing
Tc = 100 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
600
Typ. Max.
25
250
± 100
Unit
V
µA
µA
nA
ON (∗)
Symbo l
VGS(th)
RDS(on)
ID(o n)
P ar am et e r
Test Conditions
Gat e Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 4 A
Resistance
On State Drain Current VDS > ID(o n) x RDS(on )max
VGS = 10 V
Min.
2.25
Typ.
3
0.92
Max.
3.75
1
Unit
V
Ω
8A
DYNAMIC
Symbo l
gfs (∗)
Ciss
Coss
Crss
P ar am et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(o n) x RDS(on )ma x ID = 4 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
4.5
Typ.
6.6
Max.
Unit
S
1350
175
45
1690
230
60
pF
pF
pF
2/10
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STW8NA60-STH8NA60FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
( di / dt ) o n
Qg
Qgs
Qgd
P ar am et e r
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 300 V ID = 4 A
RG = 4.7 Ω
VGS = 10 V
(see test circuit, figure 3)
VDD = 480 V ID = 8 A
RG = 47 Ω
VGS = 10 V
(see test circuit, figure 5)
VDD = 480 V ID = 8 A VGS = 10 V
Min.
Typ.
20
35
Max.
28
35
200
58 82
9
27
Unit
ns
ns
A/µs
nC
nC
nC
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
P ar am et e r
Off-voltage Rise T ime
Fall Time
Cross-over Time
Test Conditions
VDD = 640 V ID = 8 A
RG = 4.7 Ω VGS = 10 V
(see test circuit, figure 5)
Min.
Typ.
16
16
26
Max.
23
23
37
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
P ar am et e r
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current
( pu ls ed)
VSD (∗) Forward On Voltage
ISD = 8 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
Charge
ISD = 8 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
(see test circuit, figure 5)
I R RM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
Max.
8
32
Unit
A
A
1.6
600
10
33
V
ns
µC
A
Safe Operating Area for TO-247
Safe Operating Area for ISOWATT218
3/10
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Номер в каталоге | Описание | Производители |
H8NA60FI | STH8NA60FI | ST Microelectronics |
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